AAAAAA
Results: 26-44/44
Authors:
LUNARDI L
CHANDRASEKHAR S
SWARTZ RG
HAMM RA
QUA GJ
Citation: L. Lunardi et al., A HIGH-SPEED BURST MODE OPTOELECTRONIC INTEGRATED-CIRCUIT PHOTORECEIVER USING INP INGAAS HBTS/, IEEE photonics technology letters, 6(7), 1994, pp. 817-818
Authors:
CHANDRASEKHAR S
LUNARDI LM
HAMM RA
QUA GJ
Citation: S. Chandrasekhar et al., 8-CHANNEL P-I-N HBT MONOLITHIC RECEIVER ARRAY AT 2.5 GB S PER CHANNELFOR WDM APPLICATIONS/, IEEE photonics technology letters, 6(10), 1994, pp. 1216-1218
Authors:
CHANDRASEKHAR S
LUNARDI LM
HAMM RA
QUA GJ
Citation: S. Chandrasekhar et al., 8-CHANNEL P-I-N HBT MONOLITHIC RECEIVER ARRAY AT 2.5 GB S PER CHANNELFOR WDM APPLICATIONS/, IEEE photonics technology letters, 6(10), 1994, pp. 1216-1218
Authors:
HAMM RA
RITTER D
TEMKIN H
Citation: Ra. Hamm et al., COMPACT METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2790-2794
Authors:
BELENKY GL
GARBINSKI PA
SMITH PR
LURYI S
CHO AY
HAMM RA
SIVCO DL
Citation: Gl. Belenky et al., MICROWAVE PERFORMANCE OF TOP-COLLECTOR CHARGE INJECTION TRANSISTORS ON INP SUBSTRATES, Semiconductor science and technology, 9(6), 1994, pp. 1215-1219
Authors:
HARRIOTT LR
COTTA MA
TEMKIN H
HAMM RA
FEYGENSON A
RITTER D
WANG YL
Citation: Lr. Harriott et al., MULTICHAMBER PROCESSING FOR OPTOELECTRONICS, Microelectronic engineering, 25(2-4), 1994, pp. 255-264
Authors:
BERNUSSI AA
BRASIL MJSP
BRUM JA
COTTA MA
HAMM RA
STALEY TW
CHU SNG
HARRIOTT LR
PANISH MB
TEMKIN H
Citation: Aa. Bernussi et al., INGAAS INP QUANTUM-WELLS WITH PERIODIC THICKNESS VARIATION/, Solid-state electronics, 37(4-6), 1994, pp. 653-656
Authors:
OIKNINESCHLESINGER J
EHRENFREUND E
GERSHONI D
RITTER D
HAMM RA
VANDENBERG JM
CHU SNG
Citation: J. Oiknineschlesinger et al., PHOTOMODULATION SPECTROSCOPY OF NARROW MINIBANDS IN THE CONTINUUM OF MULTIQUANTUM WELLS, Solid-state electronics, 37(4-6), 1994, pp. 1269-1272
Authors:
MEZRIN OA
FEYGENSON A
HAMM RA
Citation: Oa. Mezrin et al., ENERGY RELAXATION OF HOT-ELECTRONS IN DEGENERATE P-TYPE III-V SEMICONDUCTORS, Journal of luminescence, 60-1, 1994, pp. 688-691
Authors:
VANDENBERG JM
HAMM RA
CHU SNG
Citation: Jm. Vandenberg et al., INTERFACE STRUCTURE OF LARGE-PERIOD LATTICE-MATCHED INGAAS INP SUPERLATTICES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY - A HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY/, Journal of crystal growth, 144(1-2), 1994, pp. 9-14
Authors:
COTTA MA
HAMM RA
CHU SNG
HARRIOTT LR
TEMKIN H
Citation: Ma. Cotta et al., LATERAL THICKNESS MODULATION OF INGAAS INP QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 75(1), 1994, pp. 630-632
Authors:
BRASIL MJSP
BERNUSSI AA
COTTA MA
MARQUEZINI MV
BRUM JA
HAMM RA
CHU SNG
HARRIOTT LR
TEMKIN H
Citation: Mjsp. Brasil et al., INGAAS INP QUANTUM-WELLS WITH THICKNESS MODULATION/, Applied physics letters, 65(7), 1994, pp. 857-859
Authors:
RITTER D
HAMM RA
FEYGENSON A
SMITH PR
Citation: D. Ritter et al., ROLE OF HOT-ELECTRON BASE TRANSPORT IN ABRUPT EMITTER INP GA0.43IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 64(22), 1994, pp. 2988-2990
Authors:
CHANDRASEKHAR S
LUNARDI LM
GNAUCK AH
HAMM RA
QUA GJ
Citation: S. Chandrasekhar et al., HIGH-SPEED MONOLITHIC P-I-N HBT AND HPT/HBT PHOTORECEIVERS IMPLEMENTED WITH SIMPLE PHOTOTRANSISTOR STRUCTURE/, IEEE photonics technology letters, 5(11), 1993, pp. 1316-1318
Authors:
COTTA MA
HAMM RA
STALEY TW
CHU SNG
HARRIOTT LR
PANISH MB
TEMKIN H
Citation: Ma. Cotta et al., KINETIC SURFACE ROUGHENING IN MOLECULAR-BEAM EPITAXY OF INP, Physical review letters, 70(26), 1993, pp. 4106-4109
Authors:
BELENKY GL
GARBINSKI PA
LURYI S
MASTRAPASQUA M
CHO AY
HAMM RA
HAYES TR
LASKOWSKI EJ
SIVCO DL
SMITH PR
Citation: Gl. Belenky et al., COLLECTOR-UP LIGHT-EMITTING CHARGE INJECTION TRANSISTORS IN N-INGAAS INALAS/P-INGAAS AND N-INGAAS/INP/P-INGAAS HETEROSTRUCTURES/, Journal of applied physics, 73(12), 1993, pp. 8618-8627
Authors:
AN X
TEMKIN H
FEYGENSON A
HAMM RA
COTTA MA
LOGAN RA
COBLENTZ D
YADVISH RD
Citation: X. An et al., MONOLITHIC INTEGRATION OF INGAASP INP LASERS AND HETEROSTRUCTURE BIPOLAR-TRANSISTORS BY SELECTIVE AREA EPITAXY/, Electronics Letters, 29(8), 1993, pp. 645-646
Authors:
HARMON ES
LOVEJOY ML
MELLOCH MR
LUNDSTROM MS
RITTER D
HAMM RA
Citation: Es. Harmon et al., MINORITY-CARRIER MOBILITY ENHANCEMENT IN P-MATCHED TO INP( INGAAS LATTICE), Applied physics letters, 63(5), 1993, pp. 636-638
Authors:
RITTER D
HAMM RA
PANISH MB
GEVA M
Citation: D. Ritter et al., BERYLLIUM DELTA-DOPING STUDIES IN INP AND GA0.47IN0.53AS DURING METALORGANIC MOLECULAR-BEAM EPITAXY, Applied physics letters, 63(11), 1993, pp. 1543-1545