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Results: 1-25 | 26-38 |
Results: 26-38/38
METAL INCORPORATION AND HEAT-PULSE MEASUREMENT IN AMORPHOUS-HYDROGENATED-SILICON QUANTUM DEVICES
Authors: JAFAR M HANEMAN D
Citation: M. Jafar et D. Haneman, METAL INCORPORATION AND HEAT-PULSE MEASUREMENT IN AMORPHOUS-HYDROGENATED-SILICON QUANTUM DEVICES, Physical review. B, Condensed matter, 49(7), 1994, pp. 4605-4610
SWITCHING IN AMORPHOUS-SILICON DEVICES
Authors: JAFAR M HANEMAN D
Citation: M. Jafar et D. Haneman, SWITCHING IN AMORPHOUS-SILICON DEVICES, Physical review. B, Condensed matter, 49(19), 1994, pp. 13611-13615
CLEAVAGE LUMINESCENCE FROM INP, GE AND GEXSI1-X
Authors: LI DG MCALPINE NS HANEMAN D
Citation: Dg. Li et al., CLEAVAGE LUMINESCENCE FROM INP, GE AND GEXSI1-X, Surface science, 303(1-2), 1994, pp. 171-178
VOLTAGE GENERATION ON CLEAVAGE OF SILICON
Authors: LI DG HANEMAN D MCALPINE NS CHEN B
Citation: Dg. Li et al., VOLTAGE GENERATION ON CLEAVAGE OF SILICON, Physical review letters, 73(8), 1994, pp. 1170-1173
HEAT-TREATMENT EFFECTS ON POROUS SILICON
Authors: SABETDARIANI R HANEMAN D
Citation: R. Sabetdariani et D. Haneman, HEAT-TREATMENT EFFECTS ON POROUS SILICON, Journal of applied physics, 76(2), 1994, pp. 1346-1348
ELECTROLUMINESCENCE IN POROUS SILICON
Authors: SABETDARIANI R MCALPINE NS HANEMAN D
Citation: R. Sabetdariani et al., ELECTROLUMINESCENCE IN POROUS SILICON, Journal of applied physics, 75(12), 1994, pp. 8008-8011
LOCAL TEMPERATURE INCREASES DURING ELECTRIC-FIELD-INDUCED TRANSISTOR FORMATION IN CUINSE2
Authors: CHERNYAK L CAHEN D ZHAO S HANEMAN D
Citation: L. Chernyak et al., LOCAL TEMPERATURE INCREASES DURING ELECTRIC-FIELD-INDUCED TRANSISTOR FORMATION IN CUINSE2, Applied physics letters, 65(4), 1994, pp. 427-429
ANALYSIS OF THE SI(111)5 X 5-2 X-1 PHASE-BOUNDARY
Authors: HANEMAN D
Citation: D. Haneman, ANALYSIS OF THE SI(111)5 X 5-2 X-1 PHASE-BOUNDARY, Journal of physics. Condensed matter, 5(18), 1993, pp. 2869-2874
ENERGY OF SI AND GE CLUSTERS UNDER STRETCH AND SHEAR FOR CLEAVAGE
Authors: CHEN B HANEMAN D
Citation: B. Chen et D. Haneman, ENERGY OF SI AND GE CLUSTERS UNDER STRETCH AND SHEAR FOR CLEAVAGE, Physical review. B, Condensed matter, 48(20), 1993, pp. 15182-15188
POSSIBLE QUANTUM EFFECTS IN AMORPHOUS-SILICON DOUBLE SCHOTTKY DIODES
Authors: JAFAR M HANEMAN D
Citation: M. Jafar et D. Haneman, POSSIBLE QUANTUM EFFECTS IN AMORPHOUS-SILICON DOUBLE SCHOTTKY DIODES, Physical review. B, Condensed matter, 47(16), 1993, pp. 10911-10914
PRECISION DETERMINATION OF LONG-WAVELENGTH CLEAVAGE LUMINESCENCE ENERGY AND DERIVATION OF MINIMUM SURFACE-STATE GAP ON CLEAN CLEAVED SI SURFACES
Authors: LI DG MCALPINE NS HANEMAN D
Citation: Dg. Li et al., PRECISION DETERMINATION OF LONG-WAVELENGTH CLEAVAGE LUMINESCENCE ENERGY AND DERIVATION OF MINIMUM SURFACE-STATE GAP ON CLEAN CLEAVED SI SURFACES, Surface science, 289(1-2), 1993, pp. 120000609-120000613
HETEROJUNCTIONS OF INP WITH AMORPHOUS HYDROGENATED SILICON
Authors: WU S HANEMAN D
Citation: S. Wu et D. Haneman, HETEROJUNCTIONS OF INP WITH AMORPHOUS HYDROGENATED SILICON, Journal of applied physics, 74(9), 1993, pp. 5904-5906
D-STATE CONTRIBUTION TO STM - STRUCTURE OF VAN-DER-WAALS SURFACE (TASE2, MO0.5W0.5SE2) AND RELEVANCE FOR CATALYSIS
Authors: HANEMAN D TRIBUTSCH H
Citation: D. Haneman et H. Tributsch, D-STATE CONTRIBUTION TO STM - STRUCTURE OF VAN-DER-WAALS SURFACE (TASE2, MO0.5W0.5SE2) AND RELEVANCE FOR CATALYSIS, Chemical physics letters, 216(1-2), 1993, pp. 81-86
Risultati: 1-25 | 26-38 |