ACNP - Italian Periodicals Catalogue

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Results: 1-13 |

Results: 13

QUANTUM-WIRE TRANSISTOR AT LOCALLY GROWN EDGES

Authors: KAESEN F HANSCH W EISELE I KALUS M

Citation: F. Kaesen et al., QUANTUM-WIRE TRANSISTOR AT LOCALLY GROWN EDGES, Thin solid films, 321, 1998, pp. 106-110

ELECTRIC-FIELD TAILORING IN MBE-GROWN VERTICAL SUB-100 NM MOSFETS

Authors: HANSCH W RAO VR FINK C KAESEN F EISELE I

Citation: W. Hansch et al., ELECTRIC-FIELD TAILORING IN MBE-GROWN VERTICAL SUB-100 NM MOSFETS, Thin solid films, 321, 1998, pp. 206-214

LOW-TEMPERATURE ELECTRICAL SURFACE PASSIVATION OF MBE-GROWN PIN DIODES BY HYDROGEN AND OXYGEN PLASMA PROCESSES

Authors: STRASS A HANSCH W KAESEN F FEHLAUER G BIERINGER P FISCHER A EISELE I

Citation: A. Strass et al., LOW-TEMPERATURE ELECTRICAL SURFACE PASSIVATION OF MBE-GROWN PIN DIODES BY HYDROGEN AND OXYGEN PLASMA PROCESSES, Thin solid films, 321, 1998, pp. 261-264

ETCHING CHARACTERISTICS OF SI AND SIO2 WITH A LOW-ENERGY ARGON HYDROGEN DC PLASMA SOURCE/

Authors: STRASS A HANSCH W BIERINGER P NEUBECKER A KAESEN F FISCHER A EISELE I

Citation: A. Strass et al., ETCHING CHARACTERISTICS OF SI AND SIO2 WITH A LOW-ENERGY ARGON HYDROGEN DC PLASMA SOURCE/, Surface & coatings technology, 97(1-3), 1997, pp. 158-162

SIO2 FILM GROWTH AT ROOM-TEMPERATURE BY PLASMA-ENHANCED EVAPORATION IN AN UHV CHAMBER

Authors: STRASS A HANSCH W NEUBECKER A BIERINGER P FISCHER A EISELE I

Citation: A. Strass et al., SIO2 FILM GROWTH AT ROOM-TEMPERATURE BY PLASMA-ENHANCED EVAPORATION IN AN UHV CHAMBER, Vacuum, 48(7-9), 1997, pp. 701-704

OZONE-ENHANCED MOLECULAR-BEAM DEPOSITION OF NICKEL-OXIDE (NIO) FOR SENSOR APPLICATIONS

Authors: NEUBECKER A POMPL T DOLL T HANSCH W EISELE I

Citation: A. Neubecker et al., OZONE-ENHANCED MOLECULAR-BEAM DEPOSITION OF NICKEL-OXIDE (NIO) FOR SENSOR APPLICATIONS, Thin solid films, 310(1-2), 1997, pp. 19-23

CHARGE TRAPPING BEHAVIOR IN DEPOSITED AND GROWN THIN METAL-OXIDE-SEMICONDUCTOR GATE DIELECTRICS

Authors: RAO VR HANSCH W BAUMGARTNER H EISELE I SHARMA DK VASI J GRABOLLA T

Citation: Vr. Rao et al., CHARGE TRAPPING BEHAVIOR IN DEPOSITED AND GROWN THIN METAL-OXIDE-SEMICONDUCTOR GATE DIELECTRICS, Thin solid films, 296(1-2), 1997, pp. 37-40

DEFECT-FREE STRAIN RELAXATION IN LOCALLY MBE-GROWN SIGE HETEROSTRUCTURES

Authors: RUPP T KAESEN F HANSCH W HAMMERL E GRAVESTEIJN DJ SCHORER R SILVEIRA E ABSTREITER G EISELE I

Citation: T. Rupp et al., DEFECT-FREE STRAIN RELAXATION IN LOCALLY MBE-GROWN SIGE HETEROSTRUCTURES, Thin solid films, 294(1-2), 1997, pp. 27-32

DEVICE-QUALITY OF IN-SITU PLASMA CLEANING FOR SILICON MOLECULAR-BEAM EPITAXY

Authors: HANSCH W EISELE I KIBBEL H KONIG U RAMM J

Citation: W. Hansch et al., DEVICE-QUALITY OF IN-SITU PLASMA CLEANING FOR SILICON MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 157(1-4), 1995, pp. 100-104

PLASMA-ENHANCED EVAPORATION OF SIO2-FILMS FOR MBE-GROWN MOS DEVICES

Authors: NEUBECKER A BIERINGER P HANSCH W EISELE I

Citation: A. Neubecker et al., PLASMA-ENHANCED EVAPORATION OF SIO2-FILMS FOR MBE-GROWN MOS DEVICES, Journal of crystal growth, 157(1-4), 1995, pp. 201-206

SILICON NANOSTRUCTURE DEVICES

Authors: EISELE I BAUMGARTNER H HANSCH W

Citation: I. Eisele et al., SILICON NANOSTRUCTURE DEVICES, Journal of crystal growth, 157(1-4), 1995, pp. 248-254

SILICON MOLECULAR-BEAM EPITAXY ON HYDROGEN-PLASMA-CLEANED SUBSTRATES

Authors: HANSCH W HAMMERL E KIUNKE W EISELE I RAMM J BECK E

Citation: W. Hansch et al., SILICON MOLECULAR-BEAM EPITAXY ON HYDROGEN-PLASMA-CLEANED SUBSTRATES, JPN J A P 1, 33(4B), 1994, pp. 2263-2267

ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES

Authors: BRITTON DT WILLUTZKI P TRIFTSHAUSER W HAMMERL E HANSCH W EISELE I

Citation: Dt. Britton et al., ON THE SENSITIVITY OF POSITRONS TO ELECTRIC-FIELDS AND DEFECTS IN MBE-GROWN SILICON STRUCTURES, Applied physics. A, Solids and surfaces, 58(4), 1994, pp. 389-393

Risultati: 1-13 |