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Results: 1-25 |
Results: 25
IMPROVED RELIABILITY OF NO-NITRIDED SIO2 GROWN ON P-TYPE 4H-SIC
Authors: LI HF DIMITRIJEV S HARRISON HB
Citation: Hf. Li et al., IMPROVED RELIABILITY OF NO-NITRIDED SIO2 GROWN ON P-TYPE 4H-SIC, IEEE electron device letters, 19(8), 1998, pp. 279-281
CORRECTING SEPARATION ERRORS RELATED TO CONTACT RESISTANCE MEASUREMENT
Authors: LI Y HARRISON HB REEVES GK
Citation: Y. Li et al., CORRECTING SEPARATION ERRORS RELATED TO CONTACT RESISTANCE MEASUREMENT, Microelectronics, 29(1-2), 1998, pp. 21-30
ENHANCED ELECTROSTATIC FORCE GENERATION CAPABILITY OF ANGLED COMB FINGER DESIGN USED IN ELECTROSTATIC COMB-DRIVE ACTUATORS
Authors: ROSA MA DIMITRIJEV S HARRISON HB
Citation: Ma. Rosa et al., ENHANCED ELECTROSTATIC FORCE GENERATION CAPABILITY OF ANGLED COMB FINGER DESIGN USED IN ELECTROSTATIC COMB-DRIVE ACTUATORS, Electronics Letters, 34(18), 1998, pp. 1787-1788
NITRIDATION OF SILICON-DIOXIDE FILMS GROWN ON 6H SILICON-CARBIDE
Authors: DIMITRIJEV S LI HF HARRISON HB SWEATMAN D
Citation: S. Dimitrijev et al., NITRIDATION OF SILICON-DIOXIDE FILMS GROWN ON 6H SILICON-CARBIDE, IEEE electron device letters, 18(5), 1997, pp. 175-177
USING TLM PRINCIPLES TO DETERMINE MOSFET CONTACT AND PARASITIC RESISTANCE
Authors: REEVES GK HARRISON HB
Citation: Gk. Reeves et Hb. Harrison, USING TLM PRINCIPLES TO DETERMINE MOSFET CONTACT AND PARASITIC RESISTANCE, Solid-state electronics, 41(8), 1997, pp. 1067-1074
SLOW STATE CHARACTERIZATION BY MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF MOS CAPACITORS
Authors: DIMITRIJEV S TANNER P YAO ZQ HARRISON HB
Citation: S. Dimitrijev et al., SLOW STATE CHARACTERIZATION BY MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF MOS CAPACITORS, Microelectronics and reliability, 37(7), 1997, pp. 1143-1146
INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL-PROCESSING
Authors: LI HF DIMITRIJEV S HARRISON HB SWEATMAN D
Citation: Hf. Li et al., INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL-PROCESSING, Applied physics letters, 70(15), 1997, pp. 2028-2030
APPLICATION OF HARMONIC BALANCE-FINITE ELEMENT METHOD (HBFEM) IN THE DESIGN OF SWITCHING POWER-SUPPLIES
Authors: LU JW YAMADA S HARRISON HB
Citation: Jw. Lu et al., APPLICATION OF HARMONIC BALANCE-FINITE ELEMENT METHOD (HBFEM) IN THE DESIGN OF SWITCHING POWER-SUPPLIES, IEEE transactions on power electronics, 11(2), 1996, pp. 347-355
MEASUREMENT OF PLASMA ETCH DAMAGE BY A NEW SLOW TRAP PROFILING TECHNIQUE
Authors: TANNER P DIMITRIJEV S YEOW YT HARRISON HB
Citation: P. Tanner et al., MEASUREMENT OF PLASMA ETCH DAMAGE BY A NEW SLOW TRAP PROFILING TECHNIQUE, IEEE electron device letters, 17(11), 1996, pp. 515-517
MODELING THE GROWTH OF THIN SILICON-OXIDE FILMS ON SILICON
Authors: DIMITRIJEV S HARRISON HB
Citation: S. Dimitrijev et Hb. Harrison, MODELING THE GROWTH OF THIN SILICON-OXIDE FILMS ON SILICON, Journal of applied physics, 80(4), 1996, pp. 2467-2470
EXTENSION OF THE DEAL-GROVE OXIDATION MODEL TO INCLUDE THE EFFECTS OFNITROGEN
Authors: DIMITRIJEV S HARRISON HB SWEATMAN D
Citation: S. Dimitrijev et al., EXTENSION OF THE DEAL-GROVE OXIDATION MODEL TO INCLUDE THE EFFECTS OFNITROGEN, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 267-272
DIELECTRIC ENGINEERING FOR THE NINETIES
Authors: HARRISON HB YAO ZQ DIMITRIJEV S
Citation: Hb. Harrison et al., DIELECTRIC ENGINEERING FOR THE NINETIES, Integrated ferroelectrics, 9(1-3), 1995, pp. 105-113
RELAXATION OF ACCEPTANCE LIMITS (RAL) - A GLOBAL APPROACH FOR PARAMETRIC YIELD CONTROL OF 0.1-MU-M DEEP-SUBMICRON MOSFET DEVICES
Authors: SITTE R DIMITRIJEV S HARRISON HB
Citation: R. Sitte et al., RELAXATION OF ACCEPTANCE LIMITS (RAL) - A GLOBAL APPROACH FOR PARAMETRIC YIELD CONTROL OF 0.1-MU-M DEEP-SUBMICRON MOSFET DEVICES, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 374-377
EFFECTS OF NITRIC-OXIDE ANNEALING OF THERMALLY GROWN SILICON DIOXIDE CHARACTERISTICS
Authors: YAO ZQ HARRISON HB DIMITRIJEV S YEOW YT
Citation: Zq. Yao et al., EFFECTS OF NITRIC-OXIDE ANNEALING OF THERMALLY GROWN SILICON DIOXIDE CHARACTERISTICS, IEEE electron device letters, 16(8), 1995, pp. 345-347
A TRI-LAYER TRANSMISSION-LINE MODEL APPLIED TO ALLOYED OHMIC CONTACTS
Authors: REEVES GK HARRISON HB
Citation: Gk. Reeves et Hb. Harrison, A TRI-LAYER TRANSMISSION-LINE MODEL APPLIED TO ALLOYED OHMIC CONTACTS, Solid-state electronics, 38(5), 1995, pp. 1115-1117
UNDERSTANDING THE SHEET RESISTANCE PARAMETER OF ALLOYED OHMIC CONTACTS USING A TRANSMISSION-LINE MODEL
Authors: REEVES GK LEECH PW HARRISON HB
Citation: Gk. Reeves et al., UNDERSTANDING THE SHEET RESISTANCE PARAMETER OF ALLOYED OHMIC CONTACTS USING A TRANSMISSION-LINE MODEL, Solid-state electronics, 38(4), 1995, pp. 745-751
AN ANALYTICAL MODEL FOR ALLOYED OHMIC CONTACTS USING A TRILAYER TRANSMISSION-LINE MODEL
Authors: REEVES GK HARRISON HB
Citation: Gk. Reeves et Hb. Harrison, AN ANALYTICAL MODEL FOR ALLOYED OHMIC CONTACTS USING A TRILAYER TRANSMISSION-LINE MODEL, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1536-1547
TECHNIQUE FOR MONITORING SLOW INTERFACE-TRAP CHARACTERISTICS IN MOS CAPACITORS
Authors: TANNER P DIMITRIJEV S HARRISON HB
Citation: P. Tanner et al., TECHNIQUE FOR MONITORING SLOW INTERFACE-TRAP CHARACTERISTICS IN MOS CAPACITORS, Electronics Letters, 31(21), 1995, pp. 1880-1881
SLOW CURRENT TRANSIENTS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: YAO ZQ DIMITRIJEV S TANNER P HARRISON HB
Citation: Zq. Yao et al., SLOW CURRENT TRANSIENTS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Applied physics letters, 66(19), 1995, pp. 2510-2512
TECHNOLOGICAL DEVELOPMENTS TOWARD DEEP-SUBMICRON P-MOS TRANSISTORS
Authors: HARRISON HB DIMITRIJEV S
Citation: Hb. Harrison et S. Dimitrijev, TECHNOLOGICAL DEVELOPMENTS TOWARD DEEP-SUBMICRON P-MOS TRANSISTORS, Radiation effects and defects in solids, 127(3-4), 1994, pp. 303-317
THE EFFECT OF DYNAMIC DESIGN PROCESSING FOR YIELD ENHANCEMENT IN THE FABRICATION OF DEEP-SUBMICRON MOSFETS
Authors: SITTE R DIMITRIJEV S HARRISON HB
Citation: R. Sitte et al., THE EFFECT OF DYNAMIC DESIGN PROCESSING FOR YIELD ENHANCEMENT IN THE FABRICATION OF DEEP-SUBMICRON MOSFETS, IEEE transactions on semiconductor manufacturing, 7(1), 1994, pp. 92-96
THE ELECTRICAL-PROPERTIES OF SUB-5-NM OXYNITRIDE DIELECTRICS PREPAREDIN A NITRIC-OXIDE AMBIENT USING RAPID THERMAL-PROCESSING
Authors: YAO ZQ HARRISON HB DIMITRIJEV S YEOW YT
Citation: Zq. Yao et al., THE ELECTRICAL-PROPERTIES OF SUB-5-NM OXYNITRIDE DIELECTRICS PREPAREDIN A NITRIC-OXIDE AMBIENT USING RAPID THERMAL-PROCESSING, IEEE electron device letters, 15(12), 1994, pp. 516-518
DEVICE PARAMETER CHANGES CAUSED BY MANUFACTURING FLUCTUATIONS OF DEEP-SUBMICRON MOSFETS
Authors: SITTE R DIMITRIJEV S HARRISON HB
Citation: R. Sitte et al., DEVICE PARAMETER CHANGES CAUSED BY MANUFACTURING FLUCTUATIONS OF DEEP-SUBMICRON MOSFETS, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2210-2215
HIGH-QUALITY ULTRATHIN DIELECTRIC FILMS GROWN ON SILICON IN A NITRIC-OXIDE AMBIENT
Authors: YAO ZQ HARRISON HB DIMITRIJEV S SWEATMAN D YEOW YT
Citation: Zq. Yao et al., HIGH-QUALITY ULTRATHIN DIELECTRIC FILMS GROWN ON SILICON IN A NITRIC-OXIDE AMBIENT, Applied physics letters, 64(26), 1994, pp. 3584-3586
SENSITIVITY OF 0.1-MU-M MOSFETS TO MANUFACTURING FLUCTUATIONS
Authors: SITTE R DIMITRIJEV S HARRISON HB
Citation: R. Sitte et al., SENSITIVITY OF 0.1-MU-M MOSFETS TO MANUFACTURING FLUCTUATIONS, Electronics Letters, 29(15), 1993, pp. 1345-1346
Risultati: 1-25 |