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Results: 51-75/82
Authors:
MIAO J
HARTNAGEL HL
RUCK D
FRICKE K
Citation: J. Miao et al., THE USE OF ION-IMPLANTATION FOR MICROMACHINING GAAS FOR SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 30-34
Authors:
HARTNAGEL HL
Citation: Hl. Hartnagel, III-V SEMICONDUCTOR PROPERTIES FOR HIGH-TEMPERATURE ELECTRONICS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 47-53
Authors:
PIRLING T
FRICKE K
SCHUSSLER M
LEE WY
FUESS H
HARTNAGEL HL
Citation: T. Pirling et al., INVESTIGATIONS ON PD IN-BASED HIGH-TEMPERATURE STABLE OHMIC CONTACTS ON GAAS BY X-RAY REFLECTOMETRY AND DIFFRACTOMETRY/, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 70-73
Authors:
URBAN J
BRAUER S
MCKINNON AW
HORN J
HJORT K
PAGNIA H
KOOPS HWP
HARTNAGEL HL
Citation: J. Urban et al., THE SCANNING TUNNELING MICROSCOPE AS A TOOL FOR NANOLITHOGRAPHY - WRITING NANOSTRUCTURES ON SI(110) IN AIR, Microelectronic engineering, 27(1-4), 1995, pp. 113-116
Authors:
GOTTWALD P
RIEMENSCHNEIDER R
SZENTPALI B
HARTNAGEL HL
KINCSES Z
RUSZINKO M
Citation: P. Gottwald et al., COMPARISON OF PHOTO-ASSISTED AND PLASMA-ASSISTED PASSIVATING PROCESS EFFECTS ON GAAS DEVICES BY MEANS OF LOW-FREQUENCY NOISE MEASUREMENTS, Solid-state electronics, 38(2), 1995, pp. 413-417
Authors:
CHATTOPADHYAY SN
ALLER I
HARTNAGEL HL
Citation: Sn. Chattopadhyay et al., DETAILED TRANSPORT MODELING OF EXPERIMENTAL BEHAVIOR OF LIGHTLY PLASMA-DAMAGED EPITAXIAL INP, International journal of electronics, 79(5), 1995, pp. 561-575
Authors:
STEINHAGEN F
HILLMER H
LOSCH R
SCHLAPP W
WALTER H
GOBEL R
KUPHAL E
HARTNAGEL HL
BURKHARD H
Citation: F. Steinhagen et al., ALGAINAS INP 1.5 MU-M MQW DFB LASER-DIODES EXCEEDING 20 GHZ BANDWIDTH/, Electronics Letters, 31(4), 1995, pp. 274-275
Authors:
DEHE A
KROZER V
FRICKE K
KLINGBEIL H
BEILENHOFF K
HARTNAGEL HL
Citation: A. Dehe et al., INTEGRATED MICROWAVE-POWER SENSOR, Electronics Letters, 31(25), 1995, pp. 2187-2188
Authors:
MIAO J
HARTNAGEL HL
WEISS BL
WILSON RJ
Citation: J. Miao et al., IMPROVED FREESTANDING SEMIINSULATING GAAS MEMBRANES FOR SENSOR APPLICATIONS, Electronics Letters, 31(13), 1995, pp. 1047-1049
Authors:
SIGURDARDOTTIR A
KROZER V
HARTNAGEL HL
Citation: A. Sigurdardottir et al., MODELING AND DESIGN OF INAS ALSB-RESONANT TUNNELING DIODES/, Applied physics letters, 67(22), 1995, pp. 3313-3315
Authors:
HJORT K
SCHWEEGER G
DEHE A
FRICKE K
HARTNAGEL HL
Citation: K. Hjort et al., THICKNESS-FIELD EXCITED THICKNESS-SHEAR RESONATORS IN (110)GAAS, Applied physics letters, 66(3), 1995, pp. 326-328
PROCESS-INDUCED DEFECTS IN INB CAUSED BY CHEMICAL-VAPOR-DEPOSITION OFSURFACE PASSIVATION DIELECTRICS
Authors:
HASHIZUME T
HASEGAWA H
RIEMENSCHNEIDER R
HARTNAGEL HL
Citation: T. Hashizume et al., PROCESS-INDUCED DEFECTS IN INB CAUSED BY CHEMICAL-VAPOR-DEPOSITION OFSURFACE PASSIVATION DIELECTRICS, JPN J A P 1, 33(1B), 1994, pp. 727-733
Authors:
SCHWEEGER G
HASEGAWA H
HARTNAGEL HL
Citation: G. Schweeger et al., FABRICATION AND CHARACTERIZATION OF DIRECT SCHOTTKY CONTACTS TO 2-DIMENSIONAL ELECTRON-GAS IN GAAS ALGAAS QUANTUM-WELLS/, JPN J A P 1, 33(1B), 1994, pp. 779-785
Authors:
FRICKE K
HARTNAGEL HL
LEE WY
SCHUSSLER M
Citation: K. Fricke et al., ALGAAS GAAS/ALGAAS DHBTS FOR HIGH-TEMPERATURE STABLE CIRCUITS/, IEEE electron device letters, 15(3), 1994, pp. 88-90
Authors:
BOCK K
HARTNAGEL HL
Citation: K. Bock et Hl. Hartnagel, SURFACE TECHNOLOGY AND ESD PROTECTION - TOWARDS HIGHLY RELIABLE GAAS MICROWAVE CIRCUITS, Semiconductor science and technology, 9(5), 1994, pp. 1005-1015
Authors:
GRUB A
KROZER V
SIMON A
HARTNAGEL HL
Citation: A. Grub et al., RELIABILITY AND MICRO-STRUCTURAL PROPERTIES OF GAAS SCHOTTKY DIODES FOR SUBMILLIMETER-WAVE APPLICATIONS, Solid-state electronics, 37(12), 1994, pp. 1925-1931
Authors:
EISENBACH A
KUPHAL E
MIETHE K
HARTNAGEL HL
Citation: A. Eisenbach et al., SN-DOPED INGAAS LAYERS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASEEPITAXY, Journal of crystal growth, 135(1-2), 1994, pp. 129-134
Authors:
SCHWEEGER G
LANG C
FRICKE K
HARTNAGEL HL
DOLT R
HOHENBERG G
Citation: G. Schweeger et al., ACTIVE GAAS SENSOR ELEMENT FOR DYNAMIC PRESSURE MEASUREMENTS, Electronics Letters, 30(16), 1994, pp. 1355-1356
Authors:
MIAO JM
WURFL J
RUCK D
HARTNAGEL HL
Citation: Jm. Miao et al., BURIED SELECTIVELY ETCHABLE MICROSTRUCTURES IN GAAS USING DEEP NITROGEN IMPLANTATION, Radiation effects and defects in solids, 126(1-4), 1993, pp. 365-368
Authors:
HARTNAGEL HL
Citation: Hl. Hartnagel, CONCEPTS OF ULTRASTABLE METAL CONTACTS AND THEIR EVALUATION, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 141-143
Authors:
HORN J
RICHTER R
HARTNAGEL HL
SPROSSLER CA
BISCHOFF M
PAGNIA H
Citation: J. Horn et al., STUDIES OF GAAS-SURFACES BY SCANNING TUNNELING INDUCED PHOTON-EMISSION, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 183-185
Authors:
BOCK K
HARTNAGEL HL
Citation: K. Bock et Hl. Hartnagel, FIELDEMITTER-BASED ESD-PROTECTION CIRCUITS FOR HIGH-FREQUENCY DEVICESAND ICS, Journal of electrostatics, 31(2-3), 1993, pp. 263-279
Authors:
RIEMENSCHNEIDER R
DASGUPTA N
SCHUTZ R
HARTNAGEL HL
KRAUTLE H
Citation: R. Riemenschneider et al., LOW-TEMPERATURE DEPOSITION OF SIO2 AND PSG USING SIH4, N2O AND PHOSPHORUS VAPOR FOR DAMAGE-FREE PASSIVATION OF INP-BASED PIN DIODES BY PLASMA-ASSISTED AND PHOTO-ASSISTED LPCVD, Applied surface science, 69(1-4), 1993, pp. 277-280
Authors:
BOCK K
HARTNAGEL HL
Citation: K. Bock et Hl. Hartnagel, ESD-DEGRADATION MECHANISMS OF GAAS MICROWAVE DEVICES AND DEVICE PROTECTION, Microelectronics and reliability, 33(9), 1993, pp. 1397-1410
Authors:
ANDERSON WT
HARTNAGEL HL
KIRCHOEFER SW
Citation: Wt. Anderson et al., NEW TUNNELING TRANSISTOR FOR CURRENT SWITCHING LOGIC, International journal of electronics, 75(4), 1993, pp. 641-645