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Results:
1-10
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Results: 10
Authors:
ARCHIMANDRITIS A
SOUYIOULTZIS S
HATZOPOULOS N
TZIVRAS M
Citation: A. Archimandritis et al., ASCARIS-LUMBRICOIDES DIAGNOSED THROUGH UPPER GASTROINTESTINAL ENDOSCOPY, Journal of clinical gastroenterology, 25(4), 1997, pp. 719-720
Authors:
FUKAREK W
MOLLER W
HATZOPOULOS N
ARMOUR DG
VANDENBERG JA
Citation: W. Fukarek et al., ELLIPSOMETRIC INVESTIGATION OF DAMAGE DISTRIBUTION IN LOW-ENERGY BORON IMPLANTATION OF SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 879-883
Authors:
YANKOV RA
HATZOPOULOS N
SKORUPA W
DANILIN AB
Citation: Ra. Yankov et al., PROXIMITY GETTERING OF COPPER IN SEPARATION-BY-IMPLANTED-OXYGEN STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 60-63
Authors:
HATZOPOULOS N
SIAPKAS DI
HEMMENT PLF
Citation: N. Hatzopoulos et al., OPTICAL INVESTIGATION OF STRUCTURES FORMED BY 2 MEV OXYGEN IMPLANTATION INTO SILICON, Thin solid films, 289(1-2), 1996, pp. 90-94
Authors:
HATZOPOULOS N
SIAPKAS DI
HEMMENT PLF
SKORUPA W
Citation: N. Hatzopoulos et al., FORMATION AND CHARACTERIZATION OF SI SIO2 MULTILAYER STRUCTURES BY OXYGEN-ION IMPLANTATION INTO SILICON/, Journal of applied physics, 80(9), 1996, pp. 4960-4970
Authors:
SIAPKAS DI
HATZOPOULOS N
KATSIDIS CC
ZORBA T
MITSAS CL
HEMMENT PLF
Citation: Di. Siapkas et al., STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF HIGH-ENERGY SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURES USING INFRARED-SPECTROSCOPY, Journal of the Electrochemical Society, 143(9), 1996, pp. 3019-3032
Authors:
HATZOPOULOS N
PANKNIN D
FUKAREK W
SKORUPA W
SIAPKAS DI
HEMMENT PLF
Citation: N. Hatzopoulos et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF DOUBLE SIMOX STRUCTURES FORMED BY SEQUENTIAL HIGH-ENERGY OXYGEN IMPLANTATION INTO SILICON, Microelectronic engineering, 28(1-4), 1995, pp. 415-418
Authors:
KATSIDIS CC
SIAPKAS DI
PANKNIN D
HATZOPOULOS N
SKORUPA W
Citation: Cc. Katsidis et al., OPTICAL CHARACTERIZATION OF DOPED SIMOX STRUCTURES USING FTIR SPECTROSCOPY, Microelectronic engineering, 28(1-4), 1995, pp. 439-442
Authors:
HATZOPOULOS N
SIAPKAS DI
HEMMENT PLF
Citation: N. Hatzopoulos et al., OXIDE-GROWTH, REFRACTIVE-INDEX, AND COMPOSITION DEPTH PROFILES OF STRUCTURES FORMED BY 2-MEV OXYGEN IMPLANTATION INTO SILICON, Journal of applied physics, 77(2), 1995, pp. 577-586
Authors:
SKORUPA W
HATZOPOULOS N
YANKOV RA
DANILIN AB
Citation: W. Skorupa et al., PROXIMITY GETTERING OF TRANSITION-METALS IN SEPARATION BY IMPLANTED OXYGEN STRUCTURES, Applied physics letters, 67(20), 1995, pp. 2992-2994
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1-10
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