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Results: 26-50/65
Authors:
CHOQUETTE KD
HOU HQ
Citation: Kd. Choquette et Hq. Hou, VERTICAL-CAVITY SURFACE-EMITTING LASERS - MOVING FROM RESEARCH TO MANUFACTURING, Proceedings of the IEEE, 85(11), 1997, pp. 1730-1739
Authors:
LEAR KL
HOU HQ
BANAS JJ
HAMMONS BE
FURIOLI J
OSINSKI M
Citation: Kl. Lear et al., VERTICAL-CAVITY LASERS ON P-DOPED SUBSTRATES, Electronics Letters, 33(9), 1997, pp. 783-784
Authors:
QIAN Y
ZHU ZH
LO YH
HUFFAKER DL
DEPPE DG
HOU HQ
HAMMONS BE
LIN W
TU YK
Citation: Y. Qian et al., SUBMILLIAMP 1.3-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH THRESHOLD CURRENT-DENSITY OF LESS-THAN-500A CM(2)/, Electronics Letters, 33(12), 1997, pp. 1052-1054
Authors:
EJECKAM FE
SEAFORD ML
LO YH
HOU HQ
HAMMONS BE
Citation: Fe. Ejeckam et al., DISLOCATION-FREE INSB GROWN ON GAAS COMPLIANT UNIVERSAL SUBSTRATES, Applied physics letters, 71(6), 1997, pp. 776-778
Authors:
QIAN Y
ZHU ZH
LO YH
HUFFAKER DL
DEPPE DG
HOU HQ
HAMMONS BE
LIN W
TU YK
Citation: Y. Qian et al., LONG-WAVELENGTH (1.3 MU-M) VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH A WAFER-BONDED MIRROR AND AN OXYGEN-IMPLANTED CONFINEMENT REGION, Applied physics letters, 71(1), 1997, pp. 25-27
Authors:
CHOQUETTE KD
CHOW WW
HADLEY GR
HOU HQ
GEIB KM
Citation: Kd. Choquette et al., SCALABILITY OF SMALL-APERTURE SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS, Applied physics letters, 70(7), 1997, pp. 823-825
Authors:
HOU HQ
HAMMONS BE
CHUI HC
Citation: Hq. Hou et al., CARBON DOPING AND ETCHING OF ALXGA1-XAS 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) WITH CARBON-TETRACHLORIDE IN METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 70(26), 1997, pp. 3600-3602
Authors:
BLUM O
ASHBY CIH
HOU HQ
Citation: O. Blum et al., BARRIER-LAYER-THICKNESS CONTROL OF SELECTIVE WET OXIDATION OF ALGAAS FOR EMBEDDED OPTICAL-ELEMENTS, Applied physics letters, 70(21), 1997, pp. 2870-2872
Authors:
ASHBY CIH
SULLIVAN JP
NEWCOMER PP
MISSERT NA
HOU HQ
HAMMONS BE
HAFICH MJ
BACA AG
Citation: Cih. Ashby et al., WET OXIDATION OF ALXGA1-XAS - TEMPORAL EVOLUTION OF COMPOSITION AND MICROSTRUCTURE AND THE IMPLICATIONS FOR METAL-INSULATOR-SEMICONDUCTOR APPLICATIONS, Applied physics letters, 70(18), 1997, pp. 2443-2445
Authors:
LI J
SEURIN JF
CHUANG SL
CHOQUETTE KD
GEIB KM
HOU HQ
Citation: J. Li et al., CORRELATION OF ELECTRICAL AND OPTICAL CHARACTERISTICS OF SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS, Applied physics letters, 70(14), 1997, pp. 1799-1801
Authors:
EJECKAM FE
LO YH
SUBRAMANIAN S
HOU HQ
HAMMONS BE
Citation: Fe. Ejeckam et al., LATTICE ENGINEERED COMPLIANT SUBSTRATE FOR DEFECT-FREE HETEROEPITAXIAL GROWTH, Applied physics letters, 70(13), 1997, pp. 1685-1687
Authors:
KUKSENKOV DV
TEMKIN H
LEAR KL
HOU HQ
Citation: Dv. Kuksenkov et al., SPONTANEOUS EMISSION FACTOR IN OXIDE CONFINED VERTICAL-CAVITY LASERS, Applied physics letters, 70(1), 1997, pp. 13-15
Authors:
LOI KK
SAKAMOTO I
SHAO XF
HOU HQ
LIAO HH
MEI XB
CHENG AN
TU CW
CHANG WSC
Citation: Kk. Loi et al., ACCURATE DE-EMBEDDING TECHNIQUE FOR ON-CHIP SMALL-SIGNAL CHARACTERIZATION OF HIGH-FREQUENCY OPTICAL MODULATOR, IEEE photonics technology letters, 8(3), 1996, pp. 402-404
Authors:
HOU HQ
CHUI HC
CHOQUETTE KD
HAMMONS BE
BREILAND WG
Citation: Hq. Hou et al., HIGHLY UNIFORM AND REPRODUCIBLE VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH IN-SITU REFLECTOMETRY, IEEE photonics technology letters, 8(10), 1996, pp. 1285-1287
Authors:
ZHANG Y
ZOU DZ
HOU HQ
DENG GH
PAN XX
LI CL
Citation: Y. Zhang et al., THE MECHANISM OF CS2 AEROSOL FORMATION, Huaxue xuebao, 54(3), 1996, pp. 226-233
Authors:
LI GH
GONI AR
SYASSEN K
HOU HQ
FENG W
ZHOU JM
Citation: Gh. Li et al., PRESSURE-DEPENDENCE OF THE ELECTRONIC SUBBAND STRUCTURE OF STRAINED IN0.2GA0.8AS GAAS MQWS/, Physica status solidi. b, Basic research, 198(1), 1996, pp. 329-335
Authors:
HOU HQ
CHANG TY
Citation: Hq. Hou et Ty. Chang, DEMONSTRATION OF WIDE-TEMPERATURE-RANGE ELECTROABSORPTION MODULATION NEAR 1.5 MU-M USING COUPLED QUANTUM-WELLS, Semiconductor science and technology, 11(10), 1996, pp. 1429-1433
Authors:
LI GH
GONI AR
SYASSEN K
HOU HQ
FENG W
ZHOU JM
Citation: Gh. Li et al., HIGH-PRESSURE STUDY OF OPTICAL-TRANSITIONS IN STRAINED IN0.2GA0.8AS GAAS MULTIPLE-QUANTUM WELLS/, Physical review. B, Condensed matter, 54(19), 1996, pp. 13820-13826
Authors:
PATRIZI GA
LOVEJOY ML
ENQUIST PM
SCHNEIDER RP
HOU HQ
Citation: Ga. Patrizi et al., MULTILEVEL INTERCONNECTS FOR HETEROJUNCTION BIPOLAR-TRANSISTOR INTEGRATED-CIRCUIT TECHNOLOGIES, Thin solid films, 291, 1996, pp. 435-439
Authors:
WU CS
WEN CP
REINER P
TU CW
HOU HQ
Citation: Cs. Wu et al., RADIATION-HARD BLOCKED TUNNELING BAND GAAS ALGAAS SUPERLATTICE LONG-WAVELENGTH INFRARED DETECTORS/, Solid-state electronics, 39(9), 1996, pp. 1253-1268
Authors:
CHOQUETTE KD
HOU HQ
LEAR KL
CHUI HC
GEIB KM
MAR A
HAMMONS BE
Citation: Kd. Choquette et al., SELF-PULSING OXIDE-CONFINED VERTICAL-CAVITY LASERS WITH ULTRALOW OPERATING CURRENT, Electronics Letters, 32(5), 1996, pp. 459-460
Authors:
HOU HQ
CRAWFORD MH
HICKMAN RJ
HAMMONS BE
Citation: Hq. Hou et al., ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF ALL-ALGAAS VISIBLE (SIMILAR-TO-700NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 32(21), 1996, pp. 1986-1987
Authors:
BLUM O
LEAR KL
HOU HQ
WARREN ME
Citation: O. Blum et al., BURIED REFRACTIVE MICROLENSES FORMED BY SELECTIVE OXIDATION OF ALGAAS, Electronics Letters, 32(15), 1996, pp. 1406-1408
Authors:
ORTIZ GG
HAINS CP
CHENG J
HOU HQ
ZOLPER JC
Citation: Gg. Ortiz et al., MONOLITHIC INTEGRATION OF IN0.2GA0.8AS VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH RESONANCE-ENHANCED QUANTUM-WELL PHOTODETECTORS, Electronics Letters, 32(13), 1996, pp. 1205-1207
Authors:
CHOQUETTE KD
GEIB KM
CHUI HC
HAMMONS BE
HOU HQ
DRUMMOND TJ
Citation: Kd. Choquette et al., SELECTIVE OXIDATION OF BURIED ALGAAS VERSUS ALAS LAYERS, Applied physics letters, 69(10), 1996, pp. 1385-1387