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Results: 1-25/34
Authors:
HUGHES HL
Citation: Hl. Hughes, THEATER IN LONDON AND THE INTERRELATIONSHIP WITH TOURISM, Tourism management, 19(5), 1998, pp. 445-452
Authors:
HUGHES HL
Citation: Hl. Hughes, SAME-SEX MARRIAGE AND SIMULACRA - EXPLORING CONCEPTIONS OF EQUALITY, Harvard civil rights-civil liberties law review, 33(1), 1998, pp. 237-252
Authors:
BHAR TN
LAMBERT RJ
HUGHES HL
Citation: Tn. Bhar et al., ELECTRON TRAPPING IN SI IMPLANTED SIMOX, Electronics Letters, 34(10), 1998, pp. 1026-1027
Authors:
AFANASEV VV
STESMANS A
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., OXYGEN VACANCIES IN SIO2, LAYERS AN SI PRODUCED AT HIGH-TEMPERATURE, Journal of the Electrochemical Society, 145(9), 1998, pp. 3157-3160
Authors:
REVESZ AG
HUGHES HL
Citation: Ag. Revesz et Hl. Hughes, PROPERTIES OF THE BURIED OXIDE LAYER IN SIMOX STRUCTURES, Microelectronic engineering, 36(1-4), 1997, pp. 343-350
Authors:
ALLEN LP
ALLES ML
DOLAN RP
HUGHES HL
MCMARR P
Citation: Lp. Allen et al., THIN BOX SIMOX SILICON-ON-INSULATOR SUBSTRATES FOR RADIATION TOLERANTADVANCED ELECTRONICS, Microelectronic engineering, 36(1-4), 1997, pp. 383-386
Authors:
AFANASEV VV
STESMANS A
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., STRUCTURAL INHOMOGENEITY AND SILICON ENRICHMENT OF BURIED SIO2 LAYERSFORMED BY OXYGEN-ION IMPLANTATION IN SILICON, Journal of applied physics, 82(5), 1997, pp. 2184-2199
RADIATION-INDUCED CHARGE IN SIMOX BURIED OXIDES - LACK OF THICKNESS DEPENDENCE AT LOW APPLIED FIELDS
Authors:
LAWRENCE RK
MRSTIK BJ
HUGHES HL
MCMARR PJ
Citation: Rk. Lawrence et al., RADIATION-INDUCED CHARGE IN SIMOX BURIED OXIDES - LACK OF THICKNESS DEPENDENCE AT LOW APPLIED FIELDS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2095-2100
Authors:
LIU ST
ALLEN LP
ANC MJ
JENKINS WC
HUGHES HL
TWIGG ME
LAWRENCE RK
Citation: St. Liu et al., REDUCTION OF RADIATION-INDUCED BACK CHANNEL THRESHOLD VOLTAGE SHIFTS IN PARTIALLY DEPLETED SIMOX CMOS DEVICES BY USING ADVANTOX(TM) SUBSTRATES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2101-2105
Authors:
LAMBERT RJ
BHAR TN
LAWRENCE RK
HUGHES HL
ALLEN L
Citation: Rj. Lambert et al., MEASUREMENT OF HOLE TRAPS IN SIMOX OXIDE BY AVALANCHE INJECTION, Electronics Letters, 33(14), 1997, pp. 1264-1265
Authors:
AFANASEV VV
STESMANS A
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., TRAP GENERATION IN BURIED OXIDES OF SILICON-ON-INSULATOR STRUCTURES BY VACUUM-ULTRAVIOLET RADIATION, Journal of the Electrochemical Society, 144(2), 1997, pp. 749-753
Authors:
AFANASEV VV
STESMANS A
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., MECHANISM OF SI ISLAND RETENTION IN BURIED SIO2 LAYERS FORMED BY OXYGEN-ION IMPLANTATION, Applied physics letters, 71(15), 1997, pp. 2106-2108
Authors:
SINHA SP
ZALESKI A
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: Sp. Sinha et al., HOT HOLE INDUCED INTERFACE STATE GENERATION AND ANNIHILATION IN SOI MOSFETS, IEEE electron device letters, 17(3), 1996, pp. 121-123
Authors:
HUGHES HL
Citation: Hl. Hughes, REDEFINING CULTURAL TOURISM, Annals of tourism research, 23(3), 1996, pp. 707-709
Authors:
LAWRENCE RK
MRSTIK BJ
HUGHES HL
MCMARR PJ
Citation: Rk. Lawrence et al., DEPENDENCE OF RADIATION-INDUCED BURIED OXIDE CHARGE ON SILICON-ON-INSULATOR FABRICATION TECHNOLOGY, IEEE transactions on nuclear science, 43(6), 1996, pp. 2639-2645
Authors:
BRADY FT
HUGHES HL
MCMARR PJ
MRSTIK B
Citation: Ft. Brady et al., TOTAL-DOSE HARDENING OF SIMOX BURIED OXIDES FOR FULLY DEPLETED DEVICES IN RAD-TOLERANT APPLICATIONS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2646-2650
Authors:
AFANASEV VV
REVESZ AG
HUGHES HL
Citation: Vv. Afanasev et al., CONFINEMENT PHENOMENA IN BURIED OXIDES OF SIMOX STRUCTURES AS AFFECTED BY PROCESSING, Journal of the Electrochemical Society, 143(2), 1996, pp. 695-700
Authors:
AFANASEV VV
BROWN GA
HUGHES HL
LIU ST
REVESZ AG
Citation: Vv. Afanasev et al., CONDUCTING AND CHARGE-TRAPPING DEFECTS IN BURIED OXIDE LAYERS OF SIMOX STRUCTURES, Journal of the Electrochemical Society, 143(1), 1996, pp. 347-352
Authors:
STEPHENSON ML
HUGHES HL
Citation: Ml. Stephenson et Hl. Hughes, HOLIDAYS AND THE UK AFRO-CARIBBEAN COMMUNITY, Tourism management, 16(6), 1995, pp. 429-435
Authors:
SINHA SP
ZALESKI A
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: Sp. Sinha et al., IN-DEPTH ANALYSIS OF OPPOSITE CHANNEL BASED CHARGE INJECTION IN SOI MOSFETS AND RELATED DEFECT CREATION AND ANNIHILATION, Microelectronic engineering, 28(1-4), 1995, pp. 383-386
Authors:
LAWRENCE RK
IOANNOU DE
HUGHES HL
MCMARR PJ
MRSTIK BJ
Citation: Rk. Lawrence et al., CHARGE TRAPPING VERSUS BURIED OXIDE THICKNESS FOR SIMOX STRUCTURES, IEEE transactions on nuclear science, 42(6), 1995, pp. 2114-2121
Authors:
ZALESKI A
SINHA SP
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: A. Zaleski et al., OPPOSITE-CHANNEL-BASED CHARGE INJECTION IN SOI MOSFETS UNDER HOT-CARRIER STRESS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1697-1700
Authors:
AFANASEV VV
REVESZ AG
BROWN GA
HUGHES HL
Citation: Vv. Afanasev et al., CHARGE INSTABILITY OF BONDED SILICON DIOXIDE LAYER INDUCED BY WET-PROCESSING, Journal of the Electrochemical Society, 142(6), 1995, pp. 1983-1986
Authors:
MRSTIK BJ
MCMARR PJ
HUGHES HL
ANC MJ
KRULL WA
Citation: Bj. Mrstik et al., IMPROVEMENT IN ELECTRICAL-PROPERTIES OF BURIED SIO2 LAYERS BY HIGH-TEMPERATURE OXIDATION, Applied physics letters, 67(22), 1995, pp. 3283-3285
Authors:
HUGHES HL
Citation: Hl. Hughes, TOURISM MULTIPLIER STUDIES - A MORE JUDICIOUS APPROACH, Tourism management, 15(6), 1994, pp. 403-406