Authors:
JOHNSON MAL
HUGHES WC
ROWLAND WH
COOK JW
SCHETZINA JF
LEONARD M
KONG HS
EDMOND JA
ZAVADA J
Citation: Mal. Johnson et al., GROWTH OF GAN, INGAN, AND ALGAN FILMS AND QUANTUM-WELL STRUCTURES BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 72-78
Authors:
HUGHES WC
BONEY C
JOHNSON MAL
COOK JW
SCHETZINA JF
Citation: Wc. Hughes et al., SURFACE PREPARATION OF ZNSE SUBSTRATES FOR MBE GROWTH OF II-VI LIGHT EMITTERS, Journal of crystal growth, 175, 1997, pp. 546-551
Citation: Wc. Hughes, THE CASE FOR PARITY IN MENTAL-HEALTH INSURANCE THROUGH A SINGLE-PAYERPLAN, Psychiatric rehabilitation journal, 20(1), 1996, pp. 33-36
Authors:
BONEY C
YU Z
ROWLAND WH
HUGHES WC
COOK JW
SCHETZINA JF
CANTWELL G
HARSCH WC
Citation: C. Boney et al., II-VI BLUE GREEN LASER-DIODES ON ZNSE SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2259-2262
Authors:
JOHNSON MAL
FUJITA S
ROWLAND WH
BOWERS KA
HUGHES WC
HE YW
ELMASRY NA
COOK JW
SCHETZINA JF
REN J
EDMOND JA
Citation: Mal. Johnson et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, ALXGA1-XN, AND ALN ON GAN SIC SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2349-2353
Authors:
JOHNSON MAL
FUJITA S
ROWLAND WH
HUGHES WC
HE YW
ELMASRY NA
COOK JW
SCHETZINA JF
REN J
EDMOND JA
Citation: Mal. Johnson et al., MBE GROWTH AND PROPERTIES OF GAN AND ALXGA1-XN ON GAN SIC SUBSTRATES/, Journal of electronic materials, 25(5), 1996, pp. 793-797
Authors:
JOHNSON MAL
FUJITA S
ROWLAND WH
HUGHES WC
COOK JW
SCHETZINA JF
Citation: Mal. Johnson et al., MBE GROWTH AND PROPERTIES OF ZNO ON SAPPHIRE AND SIC SUBSTRATES, Journal of electronic materials, 25(5), 1996, pp. 855-862
Citation: Wc. Hughes et Ls. Cain, 2ND-ORDER ELASTIC-CONSTANTS OF AGCL FROM 20 TO 430 DEGREES-C, Physical review. B, Condensed matter, 53(9), 1996, pp. 5174-5180
Authors:
HUGHES WC
ROWLAND WH
JOHNSON MAL
FUJITA S
COOK JW
SCHETZINA JF
REN J
EDMOND JA
Citation: Wc. Hughes et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN FILMS ON GAN SIC SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1571-1577
Authors:
YU Z
EASON DB
BONEY C
REN J
HUGHES WC
ROWLAND WH
COOK JW
SCHETZINA JF
CANTWELL G
HARSCH WC
Citation: Z. Yu et al., HIGH-BRIGHTNESS II-VI LIGHT-EMITTING-DIODES GROWN BY MOLECULAR-BEAM EPITAXY ON ZNSE SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 711-715
Citation: Jc. Austin et al., REASSESSMENT OF THE ASSIGNMENT OF THE INM2-VI COMPOUNDS(3+VM2+ DEFECTIN CDTE AND TERNARY II), Journal of applied physics, 78(3), 1995, pp. 1776-1781
Citation: Ca. Stutt et al., EXPERIMENTAL-VERIFICATION OF DISTRIBUTION FEEDER PLC PROPAGATION MODEL COMPUTATIONS, IEEE transactions on power delivery, 9(1), 1994, pp. 519-524
Citation: Jc. Austin et al., THE TEMPERATURE-DEPENDENT STRUCTURE OF POINT-DEFECT COMPLEXES IN SILVER-CHLORIDE CRYSTALS, Journal of physics. Condensed matter, 5(47), 1993, pp. 8829-8838
Citation: Wc. Hughes et al., OBSERVATION OF INDIUM-VACANCY AND INDIUM-HYDROGEN INTERACTIONS IN HG1-XCDXTE, Journal of electronic materials, 22(8), 1993, pp. 1011-1016
Citation: Wc. Hughes et al., ORIENTATION OF THE ELECTRIC-FIELD GRADIENT ARISING FROM A VACANCY IN HG0.79CD0.21TE, Journal of applied physics, 74(8), 1993, pp. 4943-4947