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Results:
1-22
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Results: 22
Authors:
Passow, T
Heinke, H
Schmidt, T
Falta, J
Stockmann, A
Selke, H
Ryder, PL
Leonardi, K
Hommel, D
Citation: T. Passow et al., Segregation-enhanced etching of Cd during Zn deposition on CdSe quantum dots - art. no. 193311, PHYS REV B, 6419(19), 2001, pp. 3311
Authors:
Heinke, H
Kirchner, V
Selke, H
Chierchia, R
Ebel, R
Einfeldt, S
Hommel, D
Citation: H. Heinke et al., X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence, J PHYS D, 34(10A), 2001, pp. A25-A29
Authors:
Einfeldt, S
Heinke, H
Kirchner, V
Hommel, D
Citation: S. Einfeldt et al., Strain relaxation in AlGaN/GaN superlattices grown on GaN, J APPL PHYS, 89(4), 2001, pp. 2160-2167
Authors:
Bottcher, T
Einfeldt, S
Figge, S
Chierchia, R
Heinke, H
Hommel, D
Speck, JS
Citation: T. Bottcher et al., The role of high-temperature island coalescence in the development of stresses in GaN films, APPL PHYS L, 78(14), 2001, pp. 1976-1978
Authors:
Kirchner, V
Heinke, H
Einfeldt, S
Hommel, D
Domagala, JZ
Leszczynski, M
Citation: V. Kirchner et al., Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers, MRS I J N S, 5, 2000, pp. NIL_335-NIL_340
Authors:
Heinke, H
Haase, L
Grossmann, V
Kirchner, V
Hommel, D
Citation: H. Heinke et al., Thermally induced strain in ZnSe and GaN epitaxial layers studied by high-resolution X-ray diffraction at variable temperatures, PHYS ST S-A, 180(1), 2000, pp. 189-194
Authors:
Grossmann, V
Heinke, H
Leonardi, K
Hommel, D
Citation: V. Grossmann et al., Generation of misfit dislocations due to thermally induced strain - a study by temperature-dependent HRXRD, J CRYST GR, 214, 2000, pp. 447-451
Authors:
Heinke, H
Passow, T
Stockmann, A
Selke, H
Leonardi, K
Hommel, D
Citation: H. Heinke et al., Analysis of cadmium diffusion in ZnSe by X-ray diffraction and transmission electron microscopy, J CRYST GR, 214, 2000, pp. 585-589
Authors:
Passow, T
Heinke, H
Kayser, D
Leonardi, K
Hommel, D
Citation: T. Passow et al., Growth of (Zn)CdSe quantum structures on vicinal GaAs(001) substrates: step flow growth versus strain effects, J CRYST GR, 214, 2000, pp. 606-609
Authors:
Selke, H
Kirchner, V
Heinke, H
Einfeldt, S
Ryder, PL
Hommel, D
Citation: H. Selke et al., Polytypism in epitaxially grown gallium nitride, J CRYST GR, 208(1-4), 2000, pp. 57-64
Authors:
Einfeldt, S
Kirchner, V
Heinke, H
Diesselberg, M
Figge, S
Vogeler, K
Hommel, D
Citation: S. Einfeldt et al., Strain relaxation in AlGaN under tensile plane stress, J APPL PHYS, 88(12), 2000, pp. 7029-7036
Authors:
Passow, T
Heinke, H
Falta, J
Leonardi, K
Hommel, D
Citation: T. Passow et al., Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures, APPL PHYS L, 77(22), 2000, pp. 3544-3546
Authors:
Heinke, H
Kirchner, V
Einfeldt, S
Hommel, D
Citation: H. Heinke et al., X-ray diffraction analysis of the defect structure in epitaxial GaN, APPL PHYS L, 77(14), 2000, pp. 2145-2147
Authors:
Kirchner, V
Heinke, H
Hommel, D
Domagala, JZ
Leszczynski, M
Citation: V. Kirchner et al., Thermal expansion of bulk and homoepitaxial GaN, APPL PHYS L, 77(10), 2000, pp. 1434-1436
Authors:
Kirchner, V
Ebel, R
Heinke, H
Einfeldt, S
Hommel, D
Selke, H
Ryder, PL
Citation: V. Kirchner et al., Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers, MAT SCI E B, 59(1-3), 1999, pp. 47-51
Authors:
Kirchner, V
Fehrer, M
Figge, S
Heinke, H
Einfeldt, S
Hommel, D
Selke, H
Ryder, PL
Citation: V. Kirchner et al., Correlations between structural, electrical and optical properties of GaN layers grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 659-662
Authors:
Bottcher, T
Einfeldt, S
Figge, S
Kirchner, V
Heinke, H
Hommel, D
Rudloff, D
Riemann, T
Christen, J
Citation: T. Bottcher et al., On the impact of microstructure on luminescence of InGaN/GaN multi quantumwells grown by molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 291-295
Authors:
Heinke, H
Kirchner, V
Einfeldt, S
Hommel, D
Citation: H. Heinke et al., Analysis of the defect structure of epitaxial GaN, PHYS ST S-A, 176(1), 1999, pp. 391-395
Authors:
Passow, T
Leonardi, K
Stockman, A
Selke, H
Heinke, H
Hommel, D
Citation: T. Passow et al., High-resolution x-ray diffraction investigations of highly mismatched II-VI quantum wells, J PHYS D, 32(10A), 1999, pp. A42-A46
Authors:
Grossmann, V
Heinke, H
Wenisch, H
Behringer, M
Hommel, D
Citation: V. Grossmann et al., Investigations of ZnSe based laser structures on ZnSe substrates by high resolution x-ray diffraction, J PHYS D, 32(10A), 1999, pp. A47-A50
Authors:
Wenisch, H
Fehrer, M
Klude, M
Isemann, A
Grossmann, V
Heinke, H
Ohkawa, K
Hommel, D
Prokesch, M
Rinas, U
Hartmann, H
Citation: H. Wenisch et al., Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates, J CRYST GR, 202, 1999, pp. 933-937
Authors:
Kirchner, V
Heinke, H
Birkle, U
Einfeldt, S
Hommel, D
Selke, H
Ryder, PL
Citation: V. Kirchner et al., Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers, PHYS REV B, 58(23), 1998, pp. 15749-15755
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