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Heitz, R
Bimberg, D
Zakharov, ND
Werner, P
Gosele, U
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Authors:
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Heitz, R
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Ustinov, V
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Bimberg, D
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Kapteyn, CMA
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Citation: Cma. Kapteyn et al., Hole emission from Ge/Si quantum dots studied by time-resolved capacitancespectroscopy, PHYS ST S-B, 224(1), 2001, pp. 261-264
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Citation: V. Turck et al., Effect of random field fluctuations on excitonic transitions of individualCdSe quantum dots, PHYS REV B, 61(15), 2000, pp. 9944-9947
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Heitz, R
Born, H
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Hoffmann, A
Bimberg, D
Citation: R. Heitz et al., Resonantly excited time-resolved photoluminescence study of self-organizedInGaAs/GaAs quantum dots, PHYS ST S-B, 221(1), 2000, pp. 65-70
Authors:
Maximov, MV
Tsatsul'nikov, AF
Volovik, BV
Bedarev, DA
Shernyakov, YM
Kaiander, IN
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Citation: Mv. Maximov et al., Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m, MICROEL ENG, 51-2, 2000, pp. 61-72
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Maximov, MV
Tsatsul'nikov, AF
Volovik, BV
Sizov, DS
Shernyakov, YM
Kaiander, IN
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Kovsh, AR
Mikhrin, SS
Ustinov, VM
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Heitz, R
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Ledentsov, NN
Bimberg, D
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Citation: Mv. Maximov et al., Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors, PHYS REV B, 62(24), 2000, pp. 16671-16680