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Results: 1-25 | 26-27
Results: 1-25/27
Device series resistance calculations for vertical cavity surface-emittinglasers
Authors: Dang, G Luo, B Ren, F Hobson, WS Lopata, J Chu, SNG Pearton, SJ
Citation: G. Dang et al., Device series resistance calculations for vertical cavity surface-emittinglasers, EL SOLID ST, 4(12), 2001, pp. G112-G114
High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers
Authors: Dang, G Hobson, WS Chirovsky, LMF Lopata, J Tayahi, M Chu, SNG Ren, F Pearton, SJ
Citation: G. Dang et al., High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers, IEEE PHOTON, 13(9), 2001, pp. 924-926
VCSEL beam waists from optical spectra
Authors: Chirovsky, LMF Boyd, GD Hobson, WS Lopata, J
Citation: Lmf. Chirovsky et al., VCSEL beam waists from optical spectra, IEEE PHOTON, 13(6), 2001, pp. 547-549
Characterization and annealing of Eu-doped GaN
Authors: Overberg, M Lee, KN Abernathy, CR Pearton, SJ Hobson, WS Wilson, RG Zavada, JM
Citation: M. Overberg et al., Characterization and annealing of Eu-doped GaN, MAT SCI E B, 81(1-3), 2001, pp. 150-152
Process development for small-area GaN/AlGaN heterojunction bipolar transistors
Authors: Lee, KP Zhang, AP Dang, G Ren, F Hobson, WS Lopata, J Abenathy, CR Pearton, SJ Lee, JW
Citation: Kp. Lee et al., Process development for small-area GaN/AlGaN heterojunction bipolar transistors, J VAC SCI A, 19(4), 2001, pp. 1846-1849
Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs
Authors: Hobson, WS Lopata, J Chirovsky, LMF Chu, SNG Dang, G Lou, B Ren, F Tayahi, M Kilper, DC Pearton, SJ
Citation: Ws. Hobson et al., Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs, SOL ST ELEC, 45(9), 2001, pp. 1639-1644
Self-aligned process for emitter- and base-regrowth GaNHBTs and BJTs
Authors: Lee, KP Zhang, AP Dang, G Ren, F Han, J Chu, SNG Hobson, WS Lopata, J Abernathy, CR Pearton, SJ Lee, JW
Citation: Kp. Lee et al., Self-aligned process for emitter- and base-regrowth GaNHBTs and BJTs, SOL ST ELEC, 45(2), 2001, pp. 243-247
Effect of PECVD of SiO2 passivation layers on GaN and InGaP
Authors: Baik, KH Park, PY Luo, B Lee, KP Shin, JH Abernathy, CR Hobson, WS Pearton, SJ Ren, F
Citation: Kh. Baik et al., Effect of PECVD of SiO2 passivation layers on GaN and InGaP, SOL ST ELEC, 45(12), 2001, pp. 2093-2096
Comparison of dry and wet etch processes for patterning SiO2/TiO2 distributed Bragg reflectors for vertical-cavity surface-emitting lasers
Authors: Dang, G Cho, H Ip, KP Pearton, SJ Chu, SNG Lopata, J Hobson, WS Chirovsky, LMF Ren, F
Citation: G. Dang et al., Comparison of dry and wet etch processes for patterning SiO2/TiO2 distributed Bragg reflectors for vertical-cavity surface-emitting lasers, J ELCHEM SO, 148(2), 2001, pp. G25-G28
p-ohmic contact study for intracavity contacts in AlGaAs/GaAs vertical cavity surface-emitting lasers
Authors: Luo, B Dang, G Zhang, AP Ren, F Lopata, J Chu, SNG Hobson, WS Pearton, SJ
Citation: B. Luo et al., p-ohmic contact study for intracavity contacts in AlGaAs/GaAs vertical cavity surface-emitting lasers, J ELCHEM SO, 148(12), 2001, pp. G676-G679
16 x 16 VCSEL array flip-chip bonded to CMOS VLSI circuit
Authors: Krishnamoorthy, AV Goossen, KW Chirovsky, LMF Rozier, RG Chandramani, P Hobson, WS Hui, SP Lopata, J Walker, JA D'Asaro, LA
Citation: Av. Krishnamoorthy et al., 16 x 16 VCSEL array flip-chip bonded to CMOS VLSI circuit, IEEE PHOTON, 12(8), 2000, pp. 1073-1075
Small-signal characteristics of bottom-emitting intracavity contacted VCSEL's
Authors: Krishnamoorthy, AV Chirovsky, LMF Hobson, WS Lopata, J Shah, J Rozier, R Cunningham, JE D'Asaro, LA
Citation: Av. Krishnamoorthy et al., Small-signal characteristics of bottom-emitting intracavity contacted VCSEL's, IEEE PHOTON, 12(6), 2000, pp. 609-611
Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartI: GaAs, GaSb, and AlGaAs
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Lambers, ES Abernathy, CR Pearton, SJ Hobson, WS Shul, RJ
Citation: Yb. Hahn et al., Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartI: GaAs, GaSb, and AlGaAs, PLASMA CHEM, 20(3), 2000, pp. 405-415
Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartII: InP, InSb, InGaP, and InGaAs
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Lambers, ES Abernathy, CR Pearton, SJ Hobson, WS Shul, RJ
Citation: Yb. Hahn et al., Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartII: InP, InSb, InGaP, and InGaAs, PLASMA CHEM, 20(3), 2000, pp. 417-427
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
Authors: Dang, G Luo, B Zhang, AP Cao, XA Ren, F Pearton, SJ Cho, H Hobson, WS Lopata, J van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ
Citation: G. Dang et al., npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions, SOL ST ELEC, 44(12), 2000, pp. 2097-2100
p-Ohmic contact resistance for GaAs(C)/GaN(Mg)
Authors: Dang, GT Zhang, AP Ren, F Donovan, SM Abernathy, CR Hobson, WS Lopata, J Chu, SNG Cao, XA Wilson, RG
Citation: Gt. Dang et al., p-Ohmic contact resistance for GaAs(C)/GaN(Mg), SOL ST ELEC, 44(1), 2000, pp. 105-109
Modal competition in implant-apertured index-guided vertical-cavity surface-emitting lasers
Authors: Seurin, JFP Liu, GB Chuang, SL Chirovsky, LMF Hobson, WS Lopata, J
Citation: Jfp. Seurin et al., Modal competition in implant-apertured index-guided vertical-cavity surface-emitting lasers, APPL PHYS L, 77(23), 2000, pp. 3686-3688
Two-photon photocurrent imaging of vertical cavity surface emitting lasers
Authors: Xu, C Chirovsky, LMF Hobson, WS Lopata, J Knox, WH Cunningham, JE Jan, WY D'Asaro, LA
Citation: C. Xu et al., Two-photon photocurrent imaging of vertical cavity surface emitting lasers, APPL PHYS L, 76(12), 2000, pp. 1510-1512
Implant-apertured and index-guided vertical-cavity surface-emitting lasers(I-2-VCSEL's)
Authors: Chirovsky, LMF Hobson, WS Leibenguth, RE Hui, SP Lopata, J Zydzik, GJ Giaretta, G Goossen, KW Wynn, JD Krishnamoorthy, AV Tseng, BJ Vandenberg, JM D'Asaro, LA
Citation: Lmf. Chirovsky et al., Implant-apertured and index-guided vertical-cavity surface-emitting lasers(I-2-VCSEL's), IEEE PHOTON, 11(5), 1999, pp. 500-502
Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits
Authors: Krishnamoorthy, AV Chirovsky, LMF Hobson, WS Leibenguth, RE Hui, SP Zydzik, CJ Goossen, KW Wynn, JD Tseng, BJ Lopata, J Walker, JA Cunningham, JE D'Asaro, LA
Citation: Av. Krishnamoorthy et al., Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits, IEEE PHOTON, 11(1), 1999, pp. 128-130
Selective dry etching using inductively coupled plasmas Part I. GaAs AlGaAs and GaAs InGaP
Authors: Hays, DC Cho, H Jung, KB Hahn, YB Abernathy, CR Pearton, SJ Ren, F Hobson, WS
Citation: Dc. Hays et al., Selective dry etching using inductively coupled plasmas Part I. GaAs AlGaAs and GaAs InGaP, APPL SURF S, 147(1-4), 1999, pp. 125-133
Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs
Authors: Maeda, T Lee, JW Shul, RJ Han, J Hong, J Lambers, ES Pearton, SJ Abernathy, CR Hobson, WS
Citation: T. Maeda et al., Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries I. GaAs, GaN, GaP, GaSb and AlGaAs, APPL SURF S, 143(1-4), 1999, pp. 174-182
Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries - II. InP, InGaAs, InGaAsP, InAs and AlInAs
Authors: Maeda, T Lee, JW Shul, RJ Han, J Hong, J Lambers, ES Pearton, SJ Abernathy, CR Hobson, WS
Citation: T. Maeda et al., Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries - II. InP, InGaAs, InGaAsP, InAs and AlInAs, APPL SURF S, 143(1-4), 1999, pp. 183-190
Room-temperature 1.3 mu m emission from InAs quantum dots grown by metal organic chemical vapor deposition
Authors: Bloch, J Shah, J Hobson, WS Lopata, J Chu, SNG
Citation: J. Bloch et al., Room-temperature 1.3 mu m emission from InAs quantum dots grown by metal organic chemical vapor deposition, APPL PHYS L, 75(15), 1999, pp. 2199-2201
High-power laser light source for near-field optics and its application tohigh-density optical data storage
Authors: Partovi, A Peale, D Wuttig, M Murray, CA Zydzik, G Hopkins, L Baldwin, K Hobson, WS Wynn, J Lopata, J Dhar, L Chichester, R Yeh, JHJ
Citation: A. Partovi et al., High-power laser light source for near-field optics and its application tohigh-density optical data storage, APPL PHYS L, 75(11), 1999, pp. 1515-1517
Risultati: 1-25 | 26-27