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Results: 1-17 |
Results: 17
High performance Si/Si1-Ge-x(x) resonant tunneling diodes
Authors: See, P Paul, DJ Hollander, B Mantl, S Zozoulenko, IV Berggren, KF
Citation: P. See et al., High performance Si/Si1-Ge-x(x) resonant tunneling diodes, IEEE ELEC D, 22(4), 2001, pp. 182-184
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication
Authors: Hollander, B Lenk, S Mantl, S Trinkaus, H Kirch, D Luysberg, M Hackbarth, T Herzog, HJ Fichtner, PFP
Citation: B. Hollander et al., Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication, NUCL INST B, 175, 2001, pp. 357-367
Goals, attention, and video game performance among gifted children
Authors: Blumberg, FC Hollander, B Genovese, JI
Citation: Fc. Blumberg et al., Goals, attention, and video game performance among gifted children, GIFT CHILD, 45(3), 2001, pp. 216-222
Si/SiGe electron resonant tunneling diodes with graded spacer wells
Authors: Paul, DJ See, P Bates, R Griffin, N Coonan, BP Redmond, G Crean, GM Zozoulenko, IV Berggren, KF Hollander, B Mantl, S
Citation: Dj. Paul et al., Si/SiGe electron resonant tunneling diodes with graded spacer wells, APPL PHYS L, 78(26), 2001, pp. 4184-4186
Size distribution and optical properties of self-assembled Ge on Si
Authors: Vescan, L Goryll, M Stoica, T Gartner, P Grimm, K Chretien, O Mateeva, E Dieker, C Hollander, B
Citation: L. Vescan et al., Size distribution and optical properties of self-assembled Ge on Si, APPL PHYS A, 71(4), 2000, pp. 423-432
Ordered nucleation of Ge islands along high index planes on Si
Authors: Vescan, L Grimm, K Goryll, M Hollander, B
Citation: L. Vescan et al., Ordered nucleation of Ge islands along high index planes on Si, MAT SCI E B, 69, 2000, pp. 324-328
Structural characterization of Si1-xGex/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition
Authors: Bozzo, S Lazzari, JL Hollander, B Coudreau, C Ronda, A Mantl, S D'Avitaya, FA Derrien, J
Citation: S. Bozzo et al., Structural characterization of Si1-xGex/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition, APPL SURF S, 164, 2000, pp. 35-41
New high-precision 5-axes RBS/channeling goniometer for ion beam analysis of 150 mm circle divide wafers
Authors: Hollander, B Heer, H Wagener, M Halling, H Mantl, S
Citation: B. Hollander et al., New high-precision 5-axes RBS/channeling goniometer for ion beam analysis of 150 mm circle divide wafers, NUCL INST B, 161, 2000, pp. 227-230
Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process
Authors: Dunford, RB Paul, DJ Pepper, M Coonan, B Griffin, N Redmond, G Crean, GM Hollander, B Mantl, S
Citation: Rb. Dunford et al., Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process, MICROEL ENG, 53(1-4), 2000, pp. 209-212
Investigation of Si/SiGe heterostructure material using non-destructive optical techniques
Authors: Coonan, BP Griffin, N Beechinor, JT Murtagh, M Redmond, G Crean, GM Hollander, B Mantl, S Bozzo, S Lazzari, JL d'Avitaya, FA Derrien, J Paul, DJ
Citation: Bp. Coonan et al., Investigation of Si/SiGe heterostructure material using non-destructive optical techniques, THIN SOL FI, 364(1-2), 2000, pp. 75-79
Influence of molecular hydrogen on Ge island nucleation on Si(001)
Authors: Dentel, D Vescan, L Chretien, O Hollander, B
Citation: D. Dentel et al., Influence of molecular hydrogen on Ge island nucleation on Si(001), J APPL PHYS, 88(9), 2000, pp. 5113-5118
Si/SiGe electron resonant tunneling diodes
Authors: Paul, DJ See, P Zozoulenko, IV Berggren, KF Kabius, B Hollander, B Mantl, S
Citation: Dj. Paul et al., Si/SiGe electron resonant tunneling diodes, APPL PHYS L, 77(11), 2000, pp. 1653-1655
Strain relaxation mechanism for hydrogen-implanted Si1-xGex/Si(100) heterostructures
Authors: Trinkaus, H Hollander, B Rongen, S Mantl, S Herzog, HJ Kuchenbecker, J Hackbarth, T
Citation: H. Trinkaus et al., Strain relaxation mechanism for hydrogen-implanted Si1-xGex/Si(100) heterostructures, APPL PHYS L, 76(24), 2000, pp. 3552-3554
Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation
Authors: Hollander, B Mantl, S Liedtke, R Mesters, S Herzog, HJ Kibbel, H Hackbarth, T
Citation: B. Hollander et al., Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation, NUCL INST B, 148(1-4), 1999, pp. 200-210
Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation
Authors: Mantl, S Hollander, B Liedtke, R Mesters, S Herzog, HJ Kibbel, H Hackbarth, T
Citation: S. Mantl et al., Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation, NUCL INST B, 147(1-4), 1999, pp. 29-34
Chess boards made with ink. Chess and literature (19th and 20th centuries)
Authors: Hollander, H Hollander, B
Citation: H. Hollander et B. Hollander, Chess boards made with ink. Chess and literature (19th and 20th centuries), ROMAN FORSC, 111(4), 1999, pp. 691-693
Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques
Authors: Paul, DJ Coonan, B Redmond, G O'Neill, BJ Crean, GM Hollander, B Mantl, S Zozoulenko, I Berggren, KF Lazzari, JL d'Avitaya, FA Derrien, J
Citation: Dj. Paul et al., Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques, THIN SOL FI, 336(1-2), 1998, pp. 130-136
Risultati: 1-17 |