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Results: 1-25 |
Results: 25
Electroluminescence of beta-FeSi2 light emitting devices
Authors: Lourenco, MA Butler, TM Kewell, AK Gwilliam, RM Kirkby, KJ Homewood, KP
Citation: Ma. Lourenco et al., Electroluminescence of beta-FeSi2 light emitting devices, JPN J A P 1, 40(6A), 2001, pp. 4041-4044
Thermodynamic assessment of the Ru-Si and Os-Si systems
Authors: Liu, YQ Shao, G Homewood, KP
Citation: Yq. Liu et al., Thermodynamic assessment of the Ru-Si and Os-Si systems, J ALLOY COM, 320(1), 2001, pp. 72-79
Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices
Authors: Lourenco, MA Butler, TM Kewell, AK Gwilliam, RM Kirkby, KJ Homewood, KP
Citation: Ma. Lourenco et al., Electrical, electronic and optical characterisation of ion beam synthesised beta-FeSi2 light emitting devices, NUCL INST B, 175, 2001, pp. 159-163
A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy
Authors: Lourenco, MA Knights, AP Homewood, KP Gwilliam, RM Simpson, PJ Mascher, P
Citation: Ma. Lourenco et al., A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy, NUCL INST B, 175, 2001, pp. 300-304
Properties of beta-FeSi2 grown by combined ion irradiation and annealing of Fe/Si bilayers
Authors: Milosavljevic, M Shao, G Gwilliam, RM Jeynes, C McKinty, CN Homewood, KP
Citation: M. Milosavljevic et al., Properties of beta-FeSi2 grown by combined ion irradiation and annealing of Fe/Si bilayers, NUCL INST B, 175, 2001, pp. 309-313
Ion beam synthesized silicides: growth, characterization and devices
Authors: Homewood, KP Reeson, KJ Gwilliam, RM Kewell, AK Lourenco, MA Shao, G Chen, YL Sharpe, JS McKinty, CN Butler, T
Citation: Kp. Homewood et al., Ion beam synthesized silicides: growth, characterization and devices, THIN SOL FI, 381(2), 2001, pp. 188-193
An efficient room-temperature silicon-based light-emitting diode (vol 410,pg 192, 2001)
Authors: Ng, WL Lourenco, MA Gwilliam, RM Ledain, S Shao, G Homewood, KP
Citation: Wl. Ng et al., An efficient room-temperature silicon-based light-emitting diode (vol 410,pg 192, 2001), NATURE, 414(6862), 2001, pp. 470-470
An efficient room-temperature silicon-based light-emitting diode
Authors: Ng, WL Lourenco, MA Gwilliam, RM Ledain, S Shao, G Homewood, KP
Citation: Wl. Ng et al., An efficient room-temperature silicon-based light-emitting diode, NATURE, 410(6825), 2001, pp. 192-194
Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ions
Authors: Chen, YL Shao, G Sharpe, J Gwilliam, RM Kirkby, KR Homewood, KP Goringe, MJ
Citation: Yl. Chen et al., Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ions, J MATER SCI, 36(2), 2001, pp. 321-327
Prediction of amorphous phase stability in the metal-silicon systems
Authors: Liu, YQ Shao, G Homewood, KP
Citation: Yq. Liu et al., Prediction of amorphous phase stability in the metal-silicon systems, J APPL PHYS, 90(2), 2001, pp. 724-727
Raman investigation of ion beam synthesized beta-FeSi2
Authors: Birdwell, AG Glosser, R Leong, DN Homewood, KP
Citation: Ag. Birdwell et al., Raman investigation of ion beam synthesized beta-FeSi2, J APPL PHYS, 89(2), 2001, pp. 965-972
Fast prototyping of microfluidic devices for separation science
Authors: Hoettges, KF Gwilliam, RM Homewood, KP Stevenson, D
Citation: Kf. Hoettges et al., Fast prototyping of microfluidic devices for separation science, CHROMATOGR, 53, 2001, pp. S424-S426
Amorphous-iron disilicide: A promising semiconductor
Authors: Milosavljevic, M Shao, G Bibic, N McKinty, CN Jeynes, C Homewood, KP
Citation: M. Milosavljevic et al., Amorphous-iron disilicide: A promising semiconductor, APPL PHYS L, 79(10), 2001, pp. 1438-1440
On the crystallographic characteristics of ion beam synthesised beta-FeSi2
Authors: Shao, G Homewood, KP
Citation: G. Shao et Kp. Homewood, On the crystallographic characteristics of ion beam synthesised beta-FeSi2, INTERMETALL, 8(12), 2000, pp. 1405-1412
Low temperature growth of gallium nitride
Authors: Young, WT Silva, SRP Anguita, JV Shannon, JM Homewood, KP Sealy, BJ
Citation: Wt. Young et al., Low temperature growth of gallium nitride, DIAM RELAT, 9(3-6), 2000, pp. 456-459
The optical properties of beta-FeSi2 fabricated by ion beam assisted sputtering
Authors: McKinty, CN Kewell, AK Sharpe, JS Lourenco, MA Butler, TM Valizadeh, R Colligon, JS Kirkby, KJR Homewood, KP
Citation: Cn. Mckinty et al., The optical properties of beta-FeSi2 fabricated by ion beam assisted sputtering, NUCL INST B, 161, 2000, pp. 922-925
Structural characterisation of ion beam synthesised Ru2Si3
Authors: Sharpe, JS Chen, YL Gwilliam, RM Kewell, AK Ledain, S McKinty, CN Lourenco, MA Butler, T Homewood, KP Kirkby, KJR Shao, G
Citation: Js. Sharpe et al., Structural characterisation of ion beam synthesised Ru2Si3, NUCL INST B, 161, 2000, pp. 937-940
Is there a future for semiconducting silicides? (invited)
Authors: Reeson, KJ Sharpe, J Harry, M Leong, D McKinty, C Kewell, A Lourenco, M Chen, YL Shao, G Homewood, KP
Citation: Kj. Reeson et al., Is there a future for semiconducting silicides? (invited), MICROEL ENG, 50(1-4), 2000, pp. 223-235
Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation
Authors: Knights, AP Lourenco, MA Homewood, KP Morrison, DJ Wright, NG Ortolland, S Johnson, CM O'Neill, AG Coleman, PG Hilton, KP Uren, MJ
Citation: Ap. Knights et al., Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation, J APPL PHYS, 87(8), 2000, pp. 3973-3977
On the crystallographic characteristics of ion-beam-synthesized Ru2Si3 precipitates
Authors: Shao, G Ledain, S Chen, YL Sharpe, JS Gwilliam, RM Homewood, KP Kirkby, KR Goringe, MJ
Citation: G. Shao et al., On the crystallographic characteristics of ion-beam-synthesized Ru2Si3 precipitates, APPL PHYS L, 76(18), 2000, pp. 2529-2531
The growth of gallium nitride films produced by reactive sputtering at lowtemperature
Authors: Young, WT Silva, SRP Benyoucef, M Kuball, M Anguita, JV Shannon, JM Homewood, KP Sealy, BJ
Citation: Wt. Young et al., The growth of gallium nitride films produced by reactive sputtering at lowtemperature, PHYS ST S-A, 176(1), 1999, pp. 319-322
Ion beam synthesized Ru2Si3
Authors: Sharpe, JS Chen, YL Gwilliam, RM Kewell, AK McKinty, CN Lourenco, MA Shao, G Homewood, KP Kirkby, KR
Citation: Js. Sharpe et al., Ion beam synthesized Ru2Si3, APPL PHYS L, 75(9), 1999, pp. 1282-1283
A deep semiconductor defect with continuously variable activation energy and capture cross section
Authors: Lourenco, MA Ng, WL Homewood, KP Durose, K
Citation: Ma. Lourenco et al., A deep semiconductor defect with continuously variable activation energy and capture cross section, APPL PHYS L, 75(2), 1999, pp. 277-279
Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation
Authors: Ng, WL Temple, MP Childs, PA Wellhofer, F Homewood, KP
Citation: Wl. Ng et al., Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation, APPL PHYS L, 75(1), 1999, pp. 97-99
Fine structure of beta-FeSi2 formed out of alpha-FeSi2 decomposition: metastable phase transformations
Authors: Shao, G Yang, Z Manh, DN Homewood, KP
Citation: G. Shao et al., Fine structure of beta-FeSi2 formed out of alpha-FeSi2 decomposition: metastable phase transformations, J MAT SCI L, 17(14), 1998, pp. 1243-1245
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