AAAAAA
Results: 1-25/28
Authors:
Kishi, A
Doi, T
Ohnisi, S
Awaya, N
Iguchi, K
Sakiyama, K
Maa, JS
Hsu, ST
Citation: A. Kishi et al., The effect of Al interlayer on TiSi2 formation, JPN J A P 1, 40(6A), 2001, pp. 3933-3937
Authors:
Zhang, FY
Hsu, ST
Ono, Y
Ulrich, B
Zhuang, WW
Ying, H
Stecker, L
Evans, DR
Maa, J
Citation: Fy. Zhang et al., Fabrication and characterization of sub-micron metal-ferroelectric-insulator-semiconductor field effect transistors with Pt/Pb5Ge3O11/ZrO2/Si structure, JPN J A P 2, 40(6B), 2001, pp. L635-L637
Authors:
Pan, W
Evans, DR
Barrowciff, R
Hsu, ST
Citation: W. Pan et al., The growth kinetics study of CVD Cu on TiN barriers, J PHYS IV, 11(PR3), 2001, pp. 23-30
Authors:
Zhuang, W
Charneski, LJ
Evans, DR
Hsu, ST
Tang, Z
Guloy, AM
Citation: W. Zhuang et al., CVD copper thin film deposition using (alpha-methylstyrene)Cu(I)(hfac), J PHYS IV, 11(PR3), 2001, pp. 553-560
Authors:
Li, T
Hsu, ST
Citation: T. Li et St. Hsu, The development of MOCVD techniques for ferroelectric and dielectric thin film depositions, J PHYS IV, 11(PR3), 2001, pp. 1139-1145
Authors:
Li, TK
Hsu, ST
Citation: Tk. Li et St. Hsu, Ferroelectric Pb5Ge3O11 MFMOS capacitor for one transistor memory applications, INTEGR FERR, 34(1-4), 2001, pp. 1495-1503
Authors:
Li, TK
Hsu, ST
Citation: Tk. Li et St. Hsu, The reliability properties of MOCVD PZT thin films on multilayer PT/IR electrodes, INTEGR FERR, 33(1-4), 2001, pp. 91-99
Authors:
Tsao, YP
Wang, LY
Hsu, ST
Jain, ML
Chou, SH
Huang, WC
Cheng, JW
Citation: Yp. Tsao et al., The solution structure of [d(CGC)r(a(m)a(m)a(m))d(TTTGCG)](2), J BIOM NMR, 21(3), 2001, pp. 209-220
Authors:
Maa, JS
Ono, Y
Tweet, DJ
Zhang, FY
Hsu, ST
Citation: Js. Maa et al., Effect of interlayer on thermal stability of nickel silicide, J VAC SCI A, 19(4), 2001, pp. 1595-1599
Authors:
Ying, H
Li, TK
Maa, JS
Zhang, FY
Hsu, ST
Gao, YF
Engelhard, M
Citation: H. Ying et al., Plasma etching of lead germanate (PGO) ferroelectric thin film, J VAC SCI A, 19(4), 2001, pp. 1341-1345
Authors:
Li, TK
Hsu, ST
Ulrich, B
Ying, H
Stecker, L
Evans, D
Ono, Y
Maa, JS
Lee, JJ
Citation: Tk. Li et al., Fabrication and characterization of a Pb5Ge3O11 one-transistor-memory device, APPL PHYS L, 79(11), 2001, pp. 1661-1663
Authors:
Hsu, ST
Chou, MT
Cheng, JW
Citation: St. Hsu et al., The solution structure of [d(CGC)r(aaa)d(TTTGCG)](2): hybrid junctions flanked by DNA duplexes, NUCL ACID R, 28(6), 2000, pp. 1322-1331
Authors:
Yang, MR
Chen, KS
Hsu, ST
Wu, TZ
Citation: Mr. Yang et al., Fabrication and characteristics of SiOx films by plasma chemical vapor deposition of tetramethylorthosilicate, SURF COAT, 123(2-3), 2000, pp. 204-209
Authors:
Hsu, ST
Chou, MT
Chou, SH
Huang, WC
Cheng, JW
Citation: St. Hsu et al., Hydration of [d(CGC)r(aaa)d(TTTGCG)](2), J MOL BIOL, 295(5), 2000, pp. 1129-1137
Authors:
Shih, HD
Lin, YC
Huang, HC
Tzeng, KC
Hsu, ST
Citation: Hd. Shih et al., A DNA probe for identification of Xanthomonas campestris pv. campestris, the causal organism of black rot of crucifers in Taiwan, BOTAN B A S, 41(2), 2000, pp. 113-120
Authors:
Hsin, YM
Hsu, ST
Fan, CC
Citation: Ym. Hsin et al., Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP doubleheterojunction bipolar transistor, APPL PHYS L, 77(10), 2000, pp. 1538-1539
Authors:
Zhang, FY
Li, TK
Tweet, DJ
Hsu, ST
Citation: Fy. Zhang et al., Phase and microstructure analysis of lead germanate thin film deposited bymetalorganic chemical vapor deposition, JPN J A P 2, 38(1AB), 1999, pp. L59-L61
Authors:
Zhang, FY
Maa, JS
Hsu, ST
Ohnishi, S
Zhen, WD
Citation: Fy. Zhang et al., Studies of Ir-Ta-O as high temperature stable electrode material and its application for ferroelectric SrBi2Ta2O9 thin film deposition, JPN J A P 2, 38(12A), 1999, pp. L1447-L1449
Authors:
Liao, HJ
Hsu, ST
Citation: Hj. Liao et St. Hsu, Should grouted anchors have short tendon bond length? Discussion, J GEOTECH G, 125(9), 1999, pp. 810-812
Authors:
Maa, JS
Howard, DJ
He, SS
Tweet, DJ
Stecker, L
Stecker, G
Hsu, ST
Citation: Js. Maa et al., Selectivity to silicon nitride in chemical vapor deposition of titanium silicide, J VAC SCI B, 17(5), 1999, pp. 2243-2247
Authors:
Li, TK
Zhang, FY
Ono, Y
Hsu, ST
Citation: Tk. Li et al., Fatigue free ferroelectric Pb5Ge3O11 thin films prepared by metalorganic chemical vapor deposition, INTEGR FERR, 26(1-4), 1999, pp. 777-785
Authors:
Zhuang, W
Li, T
Barrowcliff, R
Stecker, G
Hsu, ST
Citation: W. Zhuang et al., Studies on PZT precursor solutions, INTEGR FERR, 26(1-4), 1999, pp. 979-986
Authors:
Ma, Y
Evans, DR
Nguyen, T
Ono, Y
Hsu, ST
Citation: Y. Ma et al., Fabrication and characterization of sub-quarter-micron MOSFET's with a copper gate electrode, IEEE ELEC D, 20(5), 1999, pp. 254-255
Authors:
Chen, KS
Yang, MR
Hsu, ST
Citation: Ks. Chen et al., Fabrication and characterization of fluorine-containing films using plasmapolymerization of octafluorotoluene, MATER CH PH, 61(3), 1999, pp. 214-218
Authors:
Aardahl, CL
Rogers, JW
Yun, HK
Ono, Y
Tweet, DJ
Hsu, ST
Citation: Cl. Aardahl et al., Electrical properties of AlN thin films deposited at low temperature on Si(100), THIN SOL FI, 346(1-2), 1999, pp. 174-180