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Results:
1-17
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Results: 17
Authors:
EIMORI T
OASHI T
MORISHITA F
IWAMATSU T
YAMAGUCHI Y
OKUDA F
SHIMOMURA K
SHIMANO H
SAKASHITA N
ARIMOTO K
INOUE Y
KOMORI S
INUISHI M
NISHIMURA T
MIYOSHI H
Citation: T. Eimori et al., APPROACHES TO EXTRA LOW-VOLTAGE DRAM OPERATION BY SOI-DRAM, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1000-1009
Authors:
ODA H
UENO S
AJIKA N
INUISHI M
MIYOSHI H
Citation: H. Oda et al., NEW BURIED-CHANNEL FLASH MEMORY CELL WITH SYMMETRICAL SOURCE DRAIN STRUCTURE/, Electronics & communications in Japan. Part 2, Electronics, 80(4), 1997, pp. 76-84
Authors:
KISHIMOTO T
TAKAI M
OHNO Y
NISHIMURA T
INUISHI M
Citation: T. Kishimoto et al., CONTROL OF CARRIER COLLECTION EFFICIENCY IN N(+)P DIODE WITH RETROGRADE WELL AND EPITAXIAL LAYERS, JPN J A P 1, 36(6A), 1997, pp. 3460-3462
Authors:
YASUOKA A
KUROI T
SHIMIZU S
SHIRAHATA M
OKUMURA Y
INOUE Y
INUISHI M
NISHIMURA T
MIYOSHI H
Citation: A. Yasuoka et al., THE EFFECTS ON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR PROPERTIES OF NITROGEN IMPLANTATION INTO P(+) POLYSILICON GATE, JPN J A P 1, 36(2), 1997, pp. 617-622
Authors:
KISHIMOTO T
TAKAI M
OHNO Y
NISHIMURA T
INUISHI M
KINOMURA A
HORINO Y
FUJII K
Citation: T. Kishimoto et al., SUPPRESSION OF CHARGE-CARRIER COLLECTION IN DIODE WITH RETROGRADE WELL AND EPITAXIAL LAYERS FOR SOFT-ERROR IMMUNITY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 524-527
Authors:
MURAKAMI T
KUROI T
KAWASAKI Y
INUISHI M
MATSUI Y
YASUOKA A
Citation: T. Murakami et al., APPLICATION OF NITROGEN IMPLANTATION TO ULSI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 257-261
Authors:
SHIMOMURA K
SHIMANO H
SAKASHITA N
OKUDA F
OASHI T
YAMAGUCHI Y
EIMORI T
INUISHI M
ARIMOTO K
MAEGAWA S
INOUE Y
KOMORI S
KYUMA K
Citation: K. Shimomura et al., A 1-V 46-NS 16-MB SOI-DRAM WITH BODY CONTROL TECHNIQUE, IEEE journal of solid-state circuits, 32(11), 1997, pp. 1712-1720
Authors:
SHIMIZU S
TANIZAWA M
KUSUNOKI S
INUISHI M
MIYOSHI H
Citation: S. Shimizu et al., RELIABILITY SIMULATION OF AC HOT-CARRIER DEGRADATION FOR DEEP-SUBMICRON MOSFETS, Electronics & communications in Japan. Part 2, Electronics, 79(11), 1996, pp. 19-27
Authors:
SHIMIZU S
KUROI T
KUSUNOKI S
OKUMURA Y
INUISHI M
MIYOSHI H
Citation: S. Shimizu et al., IMPACT OF NITROGEN IMPLANTATION ON HIGHLY RELIABLE SUB-QUARTER-MICRONMETAL-OXIDE FIELD-EFFECT TRANSISTORS (MOSFETS) WITH LIGHTLY DOPED DRAIN STRUCTURE, JPN J A P 1, 35(2B), 1996, pp. 802-806
Authors:
YAMASHITA T
KOMORI S
KUROI T
INUISHI M
MIYOSHI H
Citation: T. Yamashita et al., SUBSTRATE ENGINEERING FOR REDUCTION OF ALPHA-PARTICLE-INDUCED CHARGE COLLECTION EFFICIENCY, JPN J A P 1, 35(2B), 1996, pp. 869-873
Authors:
SHIRAHATA M
OKUMURA Y
ABE Y
KUROI T
INUISHI M
MIYOSHI H
Citation: M. Shirahata et al., RELIABILITY OF SOURCE-TO-DRAIN NONUNIFORMLY DOPED CHANNEL (NUDC) MOSFETS FOR SUB-QUARTER-MICRON REGION, JPN J A P 1, 35(2B), 1996, pp. 874-881
Authors:
KUROI T
SHIRAHATA M
OKUMURA Y
SHIMIZU S
TERAMOTO A
ANMA M
INUISHI M
MIYOSHI H
Citation: T. Kuroi et al., CLARIFICATION OF NITRIDATION EFFECT ON OXIDE FORMATION METHODS, JPN J A P 1, 35(2B), 1996, pp. 1454-1459
Authors:
KUROI T
KOBAYASHI M
SHIRAHATA M
OKUMURA Y
KUSUNOKI S
INUISHI M
TSUBOUCHI N
Citation: T. Kuroi et al., THE IMPACT OF NITROGEN IMPLANTATION INTO HIGHLY DOPED POLYSILICON GATES FOR HIGHLY RELIABLE AND HIGH-PERFORMANCE SUB-QUARTER-MICRON DUAL-GATE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR, JPN J A P 1, 34(2B), 1995, pp. 771-775
Authors:
SHIMIZU S
TANIZAWA M
KUSUNOKI S
INUISHI M
TSUBOUCHI N
Citation: S. Shimizu et al., NEW P-MOSFET HOT-CARRIER DEGRADATION MODEL FOR BIDIRECTIONAL OPERATION, JPN J A P 1, 34(2B), 1995, pp. 889-894
Authors:
KUROI T
KAWASAKI Y
ISHIGAKI Y
KINOSHITA Y
INUISHI M
TSUKAMOTO K
TSUBOUCHI N
Citation: T. Kuroi et al., BIPOLAR-TRANSISTOR WITH A BURIED LAYER FORMED BY HIGH-ENERGY ION-IMPLANTATION FOR SUBHALF-MICRON BIPOLAR-COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR LSIS, JPN J A P 1, 33(1B), 1994, pp. 541-545
Authors:
SHIMIZU M
INUISHI M
TSUKAMOTO K
ARIMA H
MIYOSHI H
Citation: M. Shimizu et al., DEEP-SUBMICRON FIELD ISOLATION WITH BURIED INSULATOR BETWEEN POLYSILICON ELECTRODES (BIPS), IEICE transactions on electronics, E77C(8), 1994, pp. 1369-1376
Authors:
SHIMIZU M
YAMAGUCHI T
INUISHI M
TSUKAMOTO K
Citation: M. Shimizu et al., A NOVEL CMOS STRUCTURE WITH POLYSILICON SOURCE DRAIN (PSD) TRANSISTORS BY SELF-ALIGNED SILICIDATION, IEICE transactions on electronics, E76C(4), 1993, pp. 532-540
Risultati:
1-17
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