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Results: 1-15 |
Results: 15
MIXED-SIGNAL INTEGRATED-CIRCUITS BASED ON GAAS HEMTS
Authors: THIEDE A WANG ZG SCHLECHTWEG M LANG M LEBER P LAO ZH NOWOTNY U HURM V RIEGERMOTZER M LUDWIG M SEDLER M KOHLER K BRONNER W HORNUNG J HULSMANN A KAUFEL G RAYNOR B SCHNEIDER J JAKOBUS T SCHROTH J BERROTH M
Citation: A. Thiede et al., MIXED-SIGNAL INTEGRATED-CIRCUITS BASED ON GAAS HEMTS, IEEE transactions on very large scale integration (VLSI) systems, 6(1), 1998, pp. 6-17
20-GB S 14-K-OMEGA TRANSIMPEDANCE LONG-WAVELENGTH MSM-HEMT PHOTORECEIVER OEIC/
Authors: LAO Z HURM V BRONNER W HULSMANN A JAKOBUS T KOHLER K LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M THIEDE A
Citation: Z. Lao et al., 20-GB S 14-K-OMEGA TRANSIMPEDANCE LONG-WAVELENGTH MSM-HEMT PHOTORECEIVER OEIC/, IEEE photonics technology letters, 10(5), 1998, pp. 710-712
MODULATOR DRIVER AND PHOTORECEIVER FOR 20 GB S OPTIC-FIBER LINKS/
Authors: LAO ZH HURM V THIEDE A BERROTH M LUDWIG M LIENHART H SCHLECHTWEG M HORNUNG J BRONNER W KOHLER K HULSMANN A KAUFEL G JAKOBUS T
Citation: Zh. Lao et al., MODULATOR DRIVER AND PHOTORECEIVER FOR 20 GB S OPTIC-FIBER LINKS/, Journal of lightwave technology, 16(8), 1998, pp. 1491-1497
40-GB S HIGH-POWER MODULATOR DRIVER IC FOR LIGHTWAVE COMMUNICATION-SYSTEMS/
Authors: LAO ZH THIEDE A NOWOTNY U LIENHART H HURM V SCHLECHTWEG M HORNUNG J BRONNER W KOHLER K HULSMANN A RAYNOR B JAKOBUS T
Citation: Zh. Lao et al., 40-GB S HIGH-POWER MODULATOR DRIVER IC FOR LIGHTWAVE COMMUNICATION-SYSTEMS/, IEEE journal of solid-state circuits, 33(10), 1998, pp. 1520-1526
40 GBIT S 1.55 MU-M PIN-HEMT PHOTORECEIVER MONOLITHICALLY INTEGRATED ON 3IN GAAS SUBSTRATE/
Authors: HURM V BENZ W BRONNER W HULSMANN A JAKOBUS T KOHLER K LEVEN A LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M THIEDE A
Citation: V. Hurm et al., 40 GBIT S 1.55 MU-M PIN-HEMT PHOTORECEIVER MONOLITHICALLY INTEGRATED ON 3IN GAAS SUBSTRATE/, Electronics Letters, 34(21), 1998, pp. 2060-2062
55GHZ DYNAMIC FREQUENCY-DIVIDER IC
Authors: LAO Z THIEDE A HORNUNG J SCHLECHTWEG M LIENHART H BRONNER W HULSMANN A JAKOBUS T SEIBEL J SEDLER M KAUFEL G
Citation: Z. Lao et al., 55GHZ DYNAMIC FREQUENCY-DIVIDER IC, Electronics Letters, 34(20), 1998, pp. 1973-1974
DUAL BRIDGE 6GSAMPLE S TRACK AND HOLD CIRCUIT IN ALGAAS/GAAS/ALGAAS HEMT TECHNOLOGY/
Authors: BUSHEHRI E THIEDE A STAROSELSKY V TIMOCHENKOV V LIENHART H BRATOV V JAKOBUS T
Citation: E. Bushehri et al., DUAL BRIDGE 6GSAMPLE S TRACK AND HOLD CIRCUIT IN ALGAAS/GAAS/ALGAAS HEMT TECHNOLOGY/, Electronics Letters, 34(10), 1998, pp. 934-936
HEMT CIRCUITS FOR SIGNAL DATA PROCESSING
Authors: BERROTH M HURM V LANG M LAO Z THIEDE A WANG ZG BANGERT A BRONNER W HULSMANN A KAUFEL G KOHLER K RAYNOR B JAKOBUS T
Citation: M. Berroth et al., HEMT CIRCUITS FOR SIGNAL DATA PROCESSING, Solid-state electronics, 41(10), 1997, pp. 1407-1412
40 GHZ MONOLITHICALLY-INTEGRATED FULLY-BALANCED VCO USING 0.3 MU-M HEMTS
Authors: WANG ZG BERROTH M THIEDE A RIEGERMOTZER M JAKOBUS T HULSMANN A KOHLER K RAYNOR B
Citation: Zg. Wang et al., 40 GHZ MONOLITHICALLY-INTEGRATED FULLY-BALANCED VCO USING 0.3 MU-M HEMTS, Electronics Letters, 33(5), 1997, pp. 422-423
DC 30GHZ BANDWIDTH AND 36DB GAIN LIMITING AMPLIFIER FOR 40GBIT S OPTICAL-TRANSMISSION SYSTEMS/
Authors: LAO Z BOSCH R HURM V THIEDE A SCHLECHTWEG M BRONNER W HORNUNG J HULSMANN A JAKOBUS T
Citation: Z. Lao et al., DC 30GHZ BANDWIDTH AND 36DB GAIN LIMITING AMPLIFIER FOR 40GBIT S OPTICAL-TRANSMISSION SYSTEMS/, Electronics Letters, 33(25), 1997, pp. 2139-2141
10GBIT S LONG-WAVELENGTH PIN-HEMT PHOTORECEIVER GROWN ON GAAS/
Authors: HURM V BENZ W BRONNER W DAMMANN M JAKOBUS T KAUFEL G KOHLER K LAO Z LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M
Citation: V. Hurm et al., 10GBIT S LONG-WAVELENGTH PIN-HEMT PHOTORECEIVER GROWN ON GAAS/, Electronics Letters, 33(19), 1997, pp. 1653-1654
METAL-NON-METAL TRANSITION AT THE CROSSOVER FROM ANTIDOTS TO QUANTUM DOTS
Authors: LUTJERING G WEISS D TANK RW VONKLITZING K HULSMANN A JAKOBUS T KOHLER K
Citation: G. Lutjering et al., METAL-NON-METAL TRANSITION AT THE CROSSOVER FROM ANTIDOTS TO QUANTUM DOTS, Surface science, 362(1-3), 1996, pp. 925-929
1.3-MU-M MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING AN INGAAS MSM PHOTODIODE AND ALGAAS GAAS HEMTS GROWN ON GAAS/
Authors: HURM V BENZ W BERROTH M FINK T FRITZSCHE D HAUPT M HOFMANN P JAKOBUS T KOHLER K LUDWIG M MAUSE K RAYNOR B ROSENZWEIG J
Citation: V. Hurm et al., 1.3-MU-M MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING AN INGAAS MSM PHOTODIODE AND ALGAAS GAAS HEMTS GROWN ON GAAS/, Electronics Letters, 31(1), 1995, pp. 67-68
0.15 MU-M T-GATE E-BEAM LITHOGRAPHY USING CROSS-LINKED P(MMA MAA) DEVELOPED IN ORTHO-XYLENE RESULTING IN HIGH-CONTRAST AND HIGH PLASMA STABILITY FOR DRY-ETCHED RECESS GATE PSEUDOMORPHIC MODFETS FOR MMIC PRODUCTION/
Authors: HULSMANN A MUHLFRIEDEL E RAYNOR B GLORER K BRONNER W KOHLER K SCHNEIDER J BRAUNSTEIN J SCHLECHTWEG M TASKER P THIEDE A JAKOBUS T
Citation: A. Hulsmann et al., 0.15 MU-M T-GATE E-BEAM LITHOGRAPHY USING CROSS-LINKED P(MMA MAA) DEVELOPED IN ORTHO-XYLENE RESULTING IN HIGH-CONTRAST AND HIGH PLASMA STABILITY FOR DRY-ETCHED RECESS GATE PSEUDOMORPHIC MODFETS FOR MMIC PRODUCTION/, Microelectronic engineering, 23(1-4), 1994, pp. 437-440
FABRICATION AND PERFORMANCE OF 1-DIM MODFETS
Authors: HULSMANN A ROMAN P BRAUNSTEIN J KAUFEL G KOHLER K JAKOBUS T
Citation: A. Hulsmann et al., FABRICATION AND PERFORMANCE OF 1-DIM MODFETS, Microelectronic engineering, 21(1-4), 1993, pp. 393-396
Risultati: 1-15 |