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Results: 26-50/113
Authors:
TOK ES
NEAVE JH
ZHANG J
JOYCE BA
JONES TS
Citation: Es. Tok et al., ARSENIC INCORPORATION KINETICS IN GAAS(001) HOMOEPITAXY REVISITED, Surface science, 374(1-3), 1997, pp. 397-405
Authors:
TOK ES
NEAVE JH
ALLEGRETTI FE
ZHANG J
JONES TS
JOYCE BA
Citation: Es. Tok et al., INCORPORATION KINETICS OF AS-2 AND AS-4 ON GAAS(110), Surface science, 371(2-3), 1997, pp. 277-288
Authors:
HOLMES DM
SUDIJONO JL
MCCONVILLE CF
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., DIRECT EVIDENCE FOR THE STEP DENSITY MODEL IN THE INITIAL-STAGES OF THE LAYER-BY-LAYER HOMOEPITAXIAL GROWTH OF GAAS(111)A, Surface science, 370(1), 1997, pp. 173-178
Authors:
PAUL DJ
RYAN JH
KELLY PV
CREAN GM
FERNANDEZ JM
PEPPER M
BROERS AN
JOYCE BA
Citation: Dj. Paul et al., INVESTIGATIONS OF ELECTRON-BEAM AND OPTICAL INDUCED DAMAGE IN HIGH-MOBILITY SIGE HETEROSTRUCTURES, Solid-state electronics, 41(10), 1997, pp. 1509-1513
Authors:
AVERY AR
DOBBS HT
HOLMES DM
JOYCE BA
VVEDENSKY DD
Citation: Ar. Avery et al., NUCLEATION AND GROWTH OF ISLANDS ON GAAS-SURFACES, Physical review letters, 79(20), 1997, pp. 3938-3941
Authors:
BELK JG
SUDIJONO JL
ZHANG XM
NEAVE JH
JONES TS
JOYCE BA
Citation: Jg. Belk et al., SURFACE CONTRAST IN 2 DIMENSIONALLY NUCLEATED MISFIT DISLOCATIONS IN INAS GAAS(110) HETEROEPITAXY/, Physical review letters, 78(3), 1997, pp. 475-478
Authors:
YAMAGUCHI H
BELK JG
ZHANG XM
SUDIJONO JL
FAHY MR
JONES TS
JOYCE BA
Citation: H. Yamaguchi et al., RHEED AND STM STUDY OF THE 2-DIMENSIONAL GROWTH OF INAS ON GAAS(111)A, Microelectronics, 28(8-10), 1997, pp. 825-831
Authors:
TOK ES
NEAVE JH
FAHY MR
ALLEGRETTI FE
ZHANG J
JONES TS
JOYCE BA
Citation: Es. Tok et al., INFLUENCE OF ARSENIC INCORPORATION ON SURFACE-MORPHOLOGY AND SI DOPING IN GAAS(110) HOMOEPITAXY, Microelectronics, 28(8-10), 1997, pp. 833-839
Authors:
FAHY M
VACCARO P
FUJIA K
TAKAHASHI M
ZHANG XM
JOYCE BA
WATANABE T
Citation: M. Fahy et al., THE GROWTH OF (INGA)AS QUANTUM-WELLS ON GAAS(111)A, (211)A AND (311)ASUBSTRATES, Microelectronics, 28(8-10), 1997, pp. 1011-1018
Authors:
ZHANG J
NAJI OP
STEANS P
TEJEDOR P
KANEKO T
JONES TS
JOYCE BA
Citation: J. Zhang et al., MODULATED-BEAM STUDIES OF THE LAYER-BY-LAYER ETCHING OF GAAS(001) USING ASBR3 - IDENTIFICATION OF THE REACTION-MECHANISM, Journal of crystal growth, 175, 1997, pp. 1284-1288
Authors:
ZHANG J
LEES AK
TAYLOR AG
XIE MH
JOYCE BA
SOBIESIERKSI Z
WESTWOOD DI
Citation: J. Zhang et al., NEW HYDROGEN DESORPTION-KINETICS FROM VICINAL SI(001) SURFACES OBSERVED BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Journal of crystal growth, 175, 1997, pp. 477-480
Authors:
MIZUSHIMA K
VVEDENSKY DD
SMILAUER P
ZANGWILL A
ZHANG J
JOYCE BA
Citation: K. Mizushima et al., EFFECT OF HYDROGEN ON THE GROWTH-KINETICS OF SI(001) DURING GSMBE FROM DISILANE, Journal of crystal growth, 175, 1997, pp. 509-513
Authors:
XIE MH
LEES AK
FERNANDEZ JM
ZHANG J
JOYCE BA
Citation: Mh. Xie et al., ARSENIC SURFACE SEGREGATION AND INCORPORATION IN SI AND SI1-XGEX DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 173(3-4), 1997, pp. 336-342
Authors:
TAYLOR AG
TURNER AR
PEMBLE ME
JOYCE BA
Citation: Ag. Taylor et al., DYNAMIC REFLECTANCE ANISOTROPY AND REFLECTANCE MEASUREMENTS OF THE DEPOSITION OF SI ON GAAS(001)-C(4X4), Journal of crystal growth, 172(3-4), 1997, pp. 275-283
Authors:
TOK ES
JONES TS
NEAVE JH
ZHANG J
JOYCE BA
Citation: Es. Tok et al., IS THE ARSENIC INCORPORATION KINETICS IMPORTANT WHEN GROWING GAAS(001), GAAS(110), AND GAAS(111)A FILMS, Applied physics letters, 71(22), 1997, pp. 3278-3280
Authors:
JOYCE BA
RAVEAU B
Citation: Ba. Joyce et B. Raveau, ELECTRONIC MATERIALS, Current opinion in solid state & materials science, 1(1), 1996, pp. 1-3
Authors:
PAUL DJ
RYAN JM
PEPPER M
BROERS AN
WHALL TE
FERNANDEZ JM
JOYCE BA
Citation: Dj. Paul et al., ELECTRON-BEAM-INDUCED DAMAGE OF SILICON-GERMANIUM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3834-3838
Authors:
FERNANDEZ JM
HART L
ZHANG XM
XIE MH
ZHANG J
JOYCE BA
Citation: Jm. Fernandez et al., EPITAXIAL-GROWTH MODE AND SILICON SILICON-GERMANIUM HETEROINTERFACES/, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 321-325
Authors:
JOYCE BA
NEAVE JH
FAHY MR
SATO K
HOLMES DM
BELK JG
SUDIJONO JL
JONES TS
Citation: Ba. Joyce et al., GROWTH DYNAMICS OF GAAS, ALAS AND (AL,GA)AS ON GAAS(110) AND GAAS(111)A SUBSTRATES DURING MOLECULAR-BEAM EPITAXY, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 327-332
Authors:
SUDIJONO JL
AVERY AR
JOYCE BA
JONES TS
Citation: Jl. Sudijono et al., STM STUDIES OF ISLAND FORMATION AND SURFACE ORDERING OF SI ON GAAS(001), GAAS(2X4) AND C(4X4) - IMPLICATIONS FOR DELTA-DOPING, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 333-339
Authors:
SCHADE JG
JOYCE BA
GERKENSMEYER J
KECK JF
Citation: Jg. Schade et al., COMPARISON OF 3 PREVERBAL SCALES FOR POSTOPERATIVE PAIN ASSESSMENT INA DIVERSE PEDIATRIC SAMPLE, Journal of pain and symptom management, 12(6), 1996, pp. 348-359
Authors:
HOLMES DM
BELK JG
SUDIJONO JL
NEAVE JH
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., DIFFERENT GROWTH MODES IN GAAS(110) HOMOEPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 849-853
Authors:
AVERY AR
SUDIJONO JL
JONES TS
JOYCE BA
Citation: Ar. Avery et al., SITE OCCUPATION OF SI ATOMS DEPOSITED ON VICINAL GAAS(001)-(2X4) SURFACES, Applied surface science, 104, 1996, pp. 539-545
Authors:
ZHANG J
TAYLOR AG
LEES AK
FERNANDEZ JM
JOYCE BA
RAISBECK D
SHUKLA N
PEMBLE ME
Citation: J. Zhang et al., DYNAMIC CHANGES IN REFLECTANCE ANISOTROPY FROM THE SI(001) SURFACE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 53(15), 1996, pp. 10107-10115
Authors:
XIE MH
ZHANG J
LEES A
FERNANDEZ JM
JOYCE BA
Citation: Mh. Xie et al., SURFACE SEGREGATION DURING MOLECULAR-BEAM EPITAXY - THE SITE-BLOCKINGEFFECTS OF SURFACTANT ATOMS, Surface science, 367(2), 1996, pp. 231-237