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Results: 1-16 |
Results: 16
EFFECTS OF NI SILICIDATION ON THE SHALLOW P(-SI FILMS ON SI SUBSTRATES()N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE)
Authors: JUANG MH HAN SC HU MC
Citation: Mh. Juang et al., EFFECTS OF NI SILICIDATION ON THE SHALLOW P(-SI FILMS ON SI SUBSTRATES()N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE), JPN J A P 1, 37(10), 1998, pp. 5515-5518
A NOVEL PROCESS TO FORM COBALT SILICIDED P(-SI GATES BY BF2+ IMPLANTATION INTO BILAYERED COSI() POLY)A-SI FILMS AND SUBSEQUENT ANNEAL/
Authors: LAI WK LIU HW JUANG MH CHEN NC CHENG HC
Citation: Wk. Lai et al., A NOVEL PROCESS TO FORM COBALT SILICIDED P(-SI GATES BY BF2+ IMPLANTATION INTO BILAYERED COSI() POLY)A-SI FILMS AND SUBSEQUENT ANNEAL/, IEEE electron device letters, 19(7), 1998, pp. 259-261
REDUCTION OF BORON PENETRATION FOR A P(-DIFFUSION SOURCE() POLYCIDE GATE BY USING COBALT SILICIDES AS A BORON)
Authors: JUANG MH CHENG HC LAI WK YANG CJ
Citation: Mh. Juang et al., REDUCTION OF BORON PENETRATION FOR A P(-DIFFUSION SOURCE() POLYCIDE GATE BY USING COBALT SILICIDES AS A BORON), Solid-state electronics, 42(3), 1998, pp. 389-392
FORMATION OF NISI-SILICIDED SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN NI OR NISI FILMS ON SI SUBSTRATES AND SUBSEQUENT ANNEAL
Authors: JUANG MH TSAI MJ HU MC YANG CJ
Citation: Mh. Juang et al., FORMATION OF NISI-SILICIDED SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN NI OR NISI FILMS ON SI SUBSTRATES AND SUBSEQUENT ANNEAL, Solid-state electronics, 42(11), 1998, pp. 1953-1958
A STUDY OF THE DRAM PROCESS SIMPLIFICATION BY USING BLANKET MEMORY CELL SOURCE DRAIN IMPLANTATION/
Authors: JUANG MH
Citation: Mh. Juang, A STUDY OF THE DRAM PROCESS SIMPLIFICATION BY USING BLANKET MEMORY CELL SOURCE DRAIN IMPLANTATION/, Solid-state electronics, 42(11), 1998, pp. 2047-2051
EFFECTS OF COSI2 ON P(+) POLYSILICON GATES FABRICATED BY BF2+ IMPLANTATION INTO COSI AMORPHOUS SI BILAYERS
Authors: CHENG HC LAI WK LIU HW JUANG MH
Citation: Hc. Cheng et al., EFFECTS OF COSI2 ON P(+) POLYSILICON GATES FABRICATED BY BF2+ IMPLANTATION INTO COSI AMORPHOUS SI BILAYERS, Journal of the Electrochemical Society, 145(10), 1998, pp. 3590-3594
VARIATION OF CONTACT CHARACTERISTICS FOR METAL TO P(+) JUNCTIONS USING TIN AS DIFFUSION BARRIER
Authors: JUANG MH
Citation: Mh. Juang, VARIATION OF CONTACT CHARACTERISTICS FOR METAL TO P(+) JUNCTIONS USING TIN AS DIFFUSION BARRIER, Solid-state electronics, 41(6), 1997, pp. 825-828
A SCHEME FOR PROCESS SIMPLIFICATION BY USING LARGE-ANGLE-TILT BORON IMPLANTATION THROUGH OXIDE SPACER
Authors: JUANG MH
Citation: Mh. Juang, A SCHEME FOR PROCESS SIMPLIFICATION BY USING LARGE-ANGLE-TILT BORON IMPLANTATION THROUGH OXIDE SPACER, Solid-state electronics, 41(11), 1997, pp. 1721-1723
SILICIDE-CAUSED ANOMALOUS REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF COSI2 SHALLOW P(+)N JUNCTIONS
Authors: JUANG MH LIN CT CHENG HC
Citation: Mh. Juang et al., SILICIDE-CAUSED ANOMALOUS REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF COSI2 SHALLOW P(+)N JUNCTIONS, Solid-state electronics, 38(1), 1995, pp. 101-103
EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
Authors: LIN CT CHAO CH JUANG MH JAN ST CHOU PF CHENG HC
Citation: Ct. Lin et al., EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS, Journal of the Electrochemical Society, 142(3), 1995, pp. 913-917
A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTION
Authors: CHENG HC JUANG MH LIN CT HUANG LM
Citation: Hc. Cheng et al., A SILICIDATION-INDUCED PROCESS CONSIDERATION FOR FORMING SCALE-DOWN SILICIDED JUNCTION, IEEE electron device letters, 15(9), 1994, pp. 342-344
FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
Authors: LIN CT JUANG MH JAN ST CHOU PF CHENG HC
Citation: Ct. Lin et al., FORMATION OF SHALLOW P(+)N JUNCTIONS BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS, Journal of applied physics, 76(6), 1994, pp. 3887-3892
SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALING
Authors: JUANG MH LIN CT CHENG HC
Citation: Mh. Juang et al., SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALING, Journal of applied physics, 76(2), 1994, pp. 1323-1325
NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3 AR POST-ETCHING-TREATED N-SI SUBSTRATES/
Authors: CHENG HC CHEN YE JUANG MH YEN PW LIN L
Citation: Hc. Cheng et al., NOVEL PHENOMENON OF THE AL-1 WT-PERCENT-SI CONTACTS ON THE NF3 AR POST-ETCHING-TREATED N-SI SUBSTRATES/, JPN J A P 2, 32(9B), 1993, pp. 120001312-120001314
THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATION
Authors: JUANG MH LIN CT JAN ST CHENG HC
Citation: Mh. Juang et al., THE PROCESS LIMITATION FOR FORMING TI SILICIDED SHALLOW JUNCTION BY BF(2)+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS AND SUBSEQUENT TI SILICIDATION, Applied physics letters, 63(9), 1993, pp. 1267-1269
THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P-NJUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE()
Authors: JUANG MH CHENG HC
Citation: Mh. Juang et Hc. Cheng, THE REVERSE ANNEAL OF JUNCTION CHARACTERISTICS IN FORMING SHALLOW P-NJUNCTION BY BF-2(+) IMPLANTATION INTO THIN CO FILMS ON SI SUBSTRATE(), IEEE electron device letters, 13(4), 1992, pp. 220-222
Risultati: 1-16 |