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Results: 1-25/41
Authors:
HAN CS
KIM HJ
JUN J
Citation: Cs. Han et al., RELAXATION OF PHOTOGENERATED CARRIERS UNDER HE, H-2 CO2 AND O-2 ON ZNO (VOL 19, PG 676, 1998), Bulletin of the Korean Chemical Society, 19(7), 1998, pp. 3-3
Authors:
HAN CS
KIM HJ
JUN J
Citation: Cs. Han et al., RELAXATION OF PHOTOGENERATED CARRIERS UNDER HE, H-2 CO2 AND O-2 ON ZNO, Bulletin of the Korean Chemical Society, 19(6), 1998, pp. 676-680
Authors:
KNORR P
JUN J
LOJKOWSKI W
HERZIG C
Citation: P. Knorr et al., PRESSURE-DEPENDENCE OF SELF-DIFFUSION AND SOLUTE DIFFUSION IN BCC ZIRCONIUM, Physical review. B, Condensed matter, 57(1), 1998, pp. 334-340
Authors:
KRUKOWSKI S
WITEK A
ADAMCZYK J
JUN J
BOCKOWSKI M
GRZEGORY I
LUCZNIK B
NOWAK G
WROBLEWSKI M
PRESZ A
GIERLOTKA S
STELMACH S
PALOSZ B
POROWSKI S
ZINN P
Citation: S. Krukowski et al., THERMAL-PROPERTIES OF INDIUM NITRIDE, Journal of physics and chemistry of solids, 59(3), 1998, pp. 289-295
Authors:
SUSKI T
JUN J
LESZCZYNSKI M
TEISSEYRE H
STRITE S
ROCKETT A
PELZMANN A
KAMP M
EBELING KJ
Citation: T. Suski et al., OPTICAL ACTIVATION AND DIFFUSIVITY OF ION-IMPLANTED ZN ACCEPTORS IN GAN UNDER HIGH-PRESSURE, HIGH-TEMPERATURE ANNEALING, Journal of applied physics, 84(2), 1998, pp. 1155-1157
Authors:
SUNDQVIST B
EDLUND U
JACOBSSON P
JOHNELS D
JUN J
LAUNOIS P
MORET R
PERSSON PA
SOLDATOV A
WAGBERG T
Citation: B. Sundqvist et al., STRUCTURAL AND PHYSICAL-PROPERTIES OF PRESSURE POLYMERIZED C-60, Carbon (New York), 36(5-6), 1998, pp. 657-660
Authors:
KOPNIN EM
SCHWER H
JUN J
MEIJER GI
MOLINSKI R
CONDER K
KARPINSKI J
Citation: Em. Kopnin et al., CA1-XRXCUO2 (R = SR, LA) SINGLE-CRYSTALS WITH INFINITE-LAYER STRUCTURE - HIGH AR GAS-PRESSURE SYNTHESIS AND PROPERTIES, Physica. C, Superconductivity, 282, 1997, pp. 483-484
Authors:
SCHWER H
KOPNIN E
MOLINSKI R
JUN J
MEIJER GI
CONDER K
ROSSEL C
KARPINSKI J
Citation: H. Schwer et al., EFFECT OF PB DOPING ON THE STRUCTURE OF HGBA2CUO4-CRYSTALS(DELTA SINGLE), Physica. C, Superconductivity, 276(3-4), 1997, pp. 281-288
Authors:
WOJDAK M
BARANOWSKI JM
SUCHANEK B
PAKULA K
JUN J
SUSKI T
Citation: M. Wojdak et al., OPTICAL AND ELECTRICAL-PROPERTIES OF HIGH-TEMPERATURE ANNEALED HETEROEPITAXIAL GAN-MG LAYERS, Acta Physica Polonica. A, 92(5), 1997, pp. 1059-1062
Authors:
LESZCZYNSKI M
TEISSEYRE H
SUSKI T
GRZEGORY I
BOCKOWSKI M
JUN J
POROWSKI S
BAKMISIUK J
DOMAGALA J
Citation: M. Leszczynski et al., INFLUENCE OF FREE-ELECTRONS AND POINT-DEFECTS ON THE LATTICE-PARAMETERS AND THERMAL-EXPANSION OF GALLIUM NITRIDE, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 585-590
Authors:
TEISSEYRE H
LESZCZYNSKI M
SUSKI T
GRZEGORY I
BOCKOWSKI M
JUN J
POROWSKI S
PAKULA K
ROBERT JL
BEAUMONT B
GIBART P
VAILLE M
FAURIE JP
Citation: H. Teisseyre et al., HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Semiconductor science and technology, 12(2), 1997, pp. 240-243
Authors:
JUN J
HAN CS
Citation: J. Jun et Cs. Han, OXYGEN-ADSORPTION PROCESS ON ZNO SINGLE-CRYSTAL, Bulletin of the Korean Chemical Society, 18(11), 1997, pp. 1175-1179
Authors:
SCHWER H
KOPNIN EM
JUN J
KARPINSKI J
Citation: H. Schwer et al., X-RAY SINGLE-CRYSTAL STRUCTURE-ANALYSIS OF THE 3-LEG-LADDER COMPOUND (SR,CA)(4)CU6O10, Journal of solid state chemistry, 134(2), 1997, pp. 427-430
Authors:
TYAGUR YI
JUN J
Citation: Yi. Tyagur et J. Jun, THE INFLUENCE OF HIGH HYDROSTATIC PRESSURES ON PHASE-TRANSITIONS TEMPERATURE IN FERROELECTRIC-CRYSTALS OF (PBYSN1-Y)(2)P-2(SEXS1-X)(6) FAMILY, Ferroelectrics, 192(1-4), 1997, pp. 187-195
Authors:
HEYDT GT
JUN J
Citation: Gt. Heydt et J. Jun, RAPID CALCULATION OF THE PERIODIC STEADY-STATE FOR ELECTRONICALLY SWITCHED, TIME-VARYING POWER-SYSTEM LOADS, IEEE transactions on power delivery, 11(4), 1996, pp. 1860-1867
Authors:
LESZCZYNSKI M
TEISSEYRE H
SUSKI T
GRZEGORY I
BOCKOWSKI M
JUN J
PALOSZ B
POROWSKI S
PAKULA K
BARANOWSKI JM
BARSKI A
Citation: M. Leszczynski et al., THERMAL-EXPANSION OF GAN BULK CRYSTALS AND HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 90(5), 1996, pp. 887-890
Authors:
LILIENTALWEBER Z
KISIELOWSKI C
RUVIMOV S
CHEN Y
WASHBURN J
GRZEGORY I
BOCKOWSKI M
JUN J
POROWSKI S
Citation: Z. Lilientalweber et al., STRUCTURAL CHARACTERIZATION OF BULK GAN CRYSTALS GROWN UNDER HIGH HYDROSTATIC-PRESSURE, Journal of electronic materials, 25(9), 1996, pp. 1545-1550
Authors:
GALLEGOS NG
JUN J
HAGEMAN JH
Citation: Ng. Gallegos et al., PREPARATION OF GENERAL PROTEINASE SUBSTRATES USING 3,5-DINITROSALICYLALDEHYDE, Journal of biochemical and biophysical methods, 33(1), 1996, pp. 31-41
Authors:
PAKULA K
WYSMOLEK A
KORONA KP
BARANOWSKI JM
STEPNIEWSKI R
GRZEGORY I
BOCKOWSKI M
JUN J
KRUKOWSKI S
WROBLEWSKI M
POROWSKI S
Citation: K. Pakula et al., LUMINESCENCE AND REFLECTIVITY IN THE EXCITON REGION OF HOMOEPITAXIAL GAN LAYERS GROWN ON GAN SUBSTRATES, Solid state communications, 97(11), 1996, pp. 919-922
Authors:
LESZCZYNSKI M
GRZEGORY I
TEISSEYRE H
SUSKI T
BOCKOWSKI M
JUN J
BARANOWSKI JM
POROWSKI S
DOMAGALA J
Citation: M. Leszczynski et al., THE MICROSTRUCTURE OF GALLIUM NITRIDE MONOCRYSTALS GROWN AT HIGH-PRESSURE, Journal of crystal growth, 169(2), 1996, pp. 235-242
Authors:
GASSMANN A
SUSKI T
NEWMAN N
KISIELOWSKI C
JONES E
WEBER ER
LILIENTALWEBER Z
RUBIN MD
HELAVA HI
GRZEGORY I
BOCKOWSKI M
JUN J
POROWSKI S
Citation: A. Gassmann et al., HOMOEPITAXIAL GROWTH OF GAN USING MOLECULAR-BEAM EPITAXY, Journal of applied physics, 80(4), 1996, pp. 2195-2198
Authors:
LESZCZYNSKI M
TEISSEYRE H
SUSKI T
GRZEGORY I
BOCKOWSKI M
JUN J
POROWSKI S
PAKULA K
BARANOWSKI JM
FOXON CT
CHENG TS
Citation: M. Leszczynski et al., LATTICE-PARAMETERS OF GALLIUM NITRIDE, Applied physics letters, 69(1), 1996, pp. 73-75
Authors:
PONCE FA
BOUR DP
GOTZ W
JOHNSON NM
HELAVA HI
GRZEGORY I
JUN J
Citation: Fa. Ponce et al., HOMOEPITAXY OF GAN ON POLISHED BULK SINGLE-CRYSTALS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(7), 1996, pp. 917-919
Authors:
PAKULA K
BARANOWSKI JM
STEPNIEWSKI R
WYSMOLEK A
GRZEGORY I
JUN J
POROWSKI S
SAWICKI M
STAROWIEYSKI K
Citation: K. Pakula et al., GROWTH OF GAN METALORGANIC CHEMICAL-VAPOR-DEPOSITION LAYERS ON GAN SINGLE-CRYSTALS, Acta Physica Polonica. A, 88(5), 1995, pp. 861-864
Authors:
LESZCZYNSKI M
GRZEGORY I
BOCKOWSKI M
JUN J
POROWSKI S
JASINSKI J
BARANOWSKI JM
Citation: M. Leszczynski et al., CRYSTALLOGRAPHIC PROPERTIES OF BULK GAN CRYSTALS GROWN AT HIGH-PRESSURE, Acta Physica Polonica. A, 88(4), 1995, pp. 799-802