AAAAAA

   
Results: 1-10 |
Results: 10
Boron gettering on cavities induced by helium implantation in Si
Authors: Roqueta, F Alquier, D Ventura, L Dubois, C Jerisian, R
Citation: F. Roqueta et al., Boron gettering on cavities induced by helium implantation in Si, NUCL INST B, 183(3-4), 2001, pp. 318-322
Lateral gettering of iron and platinum by cavities induced by helium implantation in silicon
Authors: Roqueta, F Ventura, L Grob, JJ Jerisian, R
Citation: F. Roqueta et al., Lateral gettering of iron and platinum by cavities induced by helium implantation in silicon, NUCL INST B, 178, 2001, pp. 184-187
Trapping of aluminium by dislocation loops in Si
Authors: Ortiz, C Mathiot, D Alquier, D Dubois, C Jerisian, R
Citation: C. Ortiz et al., Trapping of aluminium by dislocation loops in Si, NUCL INST B, 178, 2001, pp. 188-191
Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects
Authors: Forster, S Lequeu, T Jerisian, R
Citation: S. Forster et al., Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, MICROEL REL, 41(9-10), 2001, pp. 1677-1682
3-D analysis of the breakdown localised defects of ACS (TM) through a triac study
Authors: Forster, S Lequeu, T Jerisian, R Hoffmann, A
Citation: S. Forster et al., 3-D analysis of the breakdown localised defects of ACS (TM) through a triac study, MICROEL REL, 40(8-10), 2000, pp. 1695-1700
On the optimum thickness to test dielectric reliability, in an integrated technology of power devices
Authors: Oussalah, S Nebel, F Jerisian, R
Citation: S. Oussalah et al., On the optimum thickness to test dielectric reliability, in an integrated technology of power devices, MICROEL REL, 40(12), 2000, pp. 2047-2051
Lateral gettering of iron by cavities induced by helium implantation in silicon
Authors: Roqueta, F Ventura, L Grob, JJ Jerisian, R
Citation: F. Roqueta et al., Lateral gettering of iron by cavities induced by helium implantation in silicon, J APPL PHYS, 88(9), 2000, pp. 5000-5003
Diffusion of low-dose implanted aluminum in silicon in inert and dry O-2 ambient
Authors: Ortiz, C Mathiot, D Dubois, C Jerisian, R
Citation: C. Ortiz et al., Diffusion of low-dose implanted aluminum in silicon in inert and dry O-2 ambient, J APPL PHYS, 87(5), 2000, pp. 2661-2663
Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects
Authors: Ortiz, C Grob, JJ Mathiot, D Claverie, A Dubois, C Jerisian, R
Citation: C. Ortiz et al., Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects, NUCL INST B, 147(1-4), 1999, pp. 122-126
Stability of cavities formed by He+ implantation in silicon
Authors: Roqueta, F Grob, A Grob, JJ Jerisian, R Stoquert, JP Ventura, L
Citation: F. Roqueta et al., Stability of cavities formed by He+ implantation in silicon, NUCL INST B, 147(1-4), 1999, pp. 298-303
Risultati: 1-10 |