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Results: 1-25/26
Authors:
KOTAKI H
NAKANO M
KATAOKA K
KAKIMOTO S
Citation: H. Kotaki et al., NOVEL ULTRA-CLEAN SELF-ALIGNED SILICIDE (SALICIDE) TECHNOLOGY USING DOUBLE TITANIUM DEPOSITED SILICIDE (DTD) PROCESS FOR 0.1-MU-M GATE ELECTRODE, JPN J A P 1, 37(3B), 1998, pp. 1174-1178
Authors:
HIBINO T
WANG SQ
KAKIMOTO S
SANO M
Citation: T. Hibino et al., DETECTION OF PROPYLENE UNDER OXIDIZING CONDITIONS USING ZIRCONIA-BASED POTENTIOMETRIC SENSOR, Sensors and actuators. B, Chemical, 50(2), 1998, pp. 149-155
Authors:
KAKIMOTO S
TAKAGI K
WATANABE H
HIGUCHI H
Citation: S. Kakimoto et al., THRESHOLD CURRENTS OF 1.55 MU-M INGAAS INGAASP MULTIPLE-QUANTUM-WELL LASER-DIODES/, Journal of applied physics, 84(4), 1998, pp. 1820-1824
Authors:
KAKIMOTO S
WATANABE H
Citation: S. Kakimoto et H. Watanabe, THRESHOLD CURRENT, DIFFERENTIAL GAIN, AND RELAXATION RESONANCE FREQUENCY OF 1.55-MU-M BULK AND MQW DFB LASER-DIODES, IEEE journal of quantum electronics, 34(7), 1998, pp. 1231-1239
Authors:
KAKIMOTO S
WATANABE H
Citation: S. Kakimoto et H. Watanabe, THRESHOLD CURRENTS OF 1.3-MU-M BULK, 1.55-MU-M BULK, AND 1.55-MU-M MQW DFB P-SUBSTRATE PARTIALLY INVERTED BURIED HETEROSTRUCTURE LASER-DIODES, IEEE journal of quantum electronics, 34(3), 1998, pp. 540-547
Authors:
KAKIMOTO S
WATANABE H
Citation: S. Kakimoto et H. Watanabe, ABSORPTION LOSS COEFFICIENT OF THE ACTIVE LAYER FOR 1.48-MU-M BULK AND MQW LASERS, IEEE journal of quantum electronics, 34(1), 1998, pp. 110-112
Authors:
KOTAKI H
ADACHI K
SUGIMOTO K
NAKANO M
KAKIMOTO S
FUKUSHIMA T
Citation: H. Kotaki et al., ADVANCED TRENCH AND LOCAL OXIDATION OF SILICON (LOCOS) ISOLATION TECHNOLOGY FOR ULTRA-LOW-POWER BULK DYNAMIC THRESHOLD METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (B-DTMOS), JPN J A P 1, 36(12B), 1997, pp. 7660-7664
Authors:
OBANA H
OKIHASHI M
KAKIMOTO S
HORI S
Citation: H. Obana et al., DETERMINATION OF ACEPHATE AND METHAMIDOPHOS IN FOODS USING SUPER-ABSORBENT POLYMER, Analytical communications, 34(9), 1997, pp. 253-256
Authors:
WATANABE H
AOYAGI T
SHIBATA K
TAKIGUCHI T
KAKIMOTO S
HIGUCHI H
Citation: H. Watanabe et al., 1.3-MU-M UNCOOLED DFB LASERS WITH LOW DISTORTION FOR CATV APPLICATION, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 659-665
Authors:
KAKIMOTO S
SAITO H
MATSUKI N
Citation: S. Kakimoto et al., ANTIEMETIC EFFECTS OF MORPHINE ON MOTION-INDUCED AND DRUG-INDUCED EMESIS IN SUNCUS-MURINUS, Biological & pharmaceutical bulletin, 20(7), 1997, pp. 739-742
Authors:
KAKIMOTO S
SAITO H
MATSUKI N
Citation: S. Kakimoto et al., INVOLVEMENT OF A PERIPHERAL MECHANISM IN THE EMESIS INDUCED BY CARDIAC-GLYCOSIDES IN SUNCUS-MURINUS, Biological & pharmaceutical bulletin, 20(5), 1997, pp. 486-489
Authors:
KAKIMOTO S
SHIGIHARA K
NAGAI Y
Citation: S. Kakimoto et al., LASER-DIODES IN PHOTON NUMBER SQUEEZED STATE, IEEE journal of quantum electronics, 33(5), 1997, pp. 824-830
Authors:
KAKIMOTO S
OBANA H
OKIHASHI M
HORI S
Citation: S. Kakimoto et al., RAPID ANALYSIS OF FUNGICIDES IN AGRICULTU RAL PRODUCTS AND PROCESSED FOODS BY APPLYING AN ACCELERATED SOLVENT-EXTRACTION SYSTEM, Shokuhin Eiseigaku Zasshi, 38(5), 1997, pp. 358-362
Authors:
KIOI K
KAKIMOTO S
SATO Y
Citation: K. Kioi et al., FORWARD BODY-BIAS SRAM CIRCUITRY ON BULK SI WITH TWIN DOUBLE-WELL, Electronics Letters, 33(23), 1997, pp. 1929-1931
Authors:
KIOI K
KOTAKI H
KAKIMOTO S
FUKUSHIMA T
SATO Y
Citation: K. Kioi et al., FORWARD BODY-BIAS MOS (FBMOS) DUAL RAIL LOGIC USING AN ADIABATIC CHARGING TECHNIQUE WITH SUB-0.6-V OPERATION, Electronics Letters, 33(14), 1997, pp. 1200-1201
Authors:
MATSUOKA T
TAGUCHI S
TANIGUCHI K
HAMAGUCHI C
KAKIMOTO S
UDA K
Citation: T. Matsuoka et al., INFLUENCE OF N2O OXYNITRIDATION ON INTERFACE-TRAP GENERATION IN SURFACE-CHANNEL P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, JPN J A P 1, 35(2B), 1996, pp. 887-891
Authors:
KOTAKI H
NAKANO M
HAYASHIDA S
MATSUOKA T
KAKIMOTO S
NAKANO A
UDA K
SATO Y
Citation: H. Kotaki et al., NOVEL LOW LEAKAGE AND LOW-RESISTANCE TITANIUM SALICIDE TECHNOLOGY WITH RECOIL NITROGEN ACHIEVED BY SILICIDATION AFTER ION-IMPLANTATION THROUGH CONTAMINATION-RESTRAINED OXYGEN-FREE LPCVD-NITRIDE LAYER (SICRON), JPN J A P 1, 35(2B), 1996, pp. 1090-1096
Authors:
MATSUOKA T
NAKANO M
KOTAKI H
HAYASHIDA S
KAKIMOTO S
ADACHI K
SUGIMOTO K
MORISHITA S
FUKUSHIMA T
SATO Y
Citation: T. Matsuoka et al., CHARACTERISTICS OF 2.8 NM GATE OXYNITRIDE MOSFETS FOR LOW-VOLTAGE OPERATING LSI, Sharp giho, (65), 1996, pp. 11-16
Authors:
MATSUOKA T
TAUCHI S
OHTSUKA H
TANIGUCHI K
HAMAGUCHI C
KAKIMOTO S
UDA K
Citation: T. Matsuoka et al., HOT-CARRIER-INDUCED DEGRADATION OF N2O-OXYNITRIDED GATE OXIDE NMOSFETS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1364-1373
Authors:
KOTAKI H
NAKANO M
HAYASHIDA S
KAKIMOTO S
MITSUHASHI K
TAKAGI J
Citation: H. Kotaki et al., NOVEL OXYGEN-FREE TITANIUM SILICIDATION (OFS) PROCESSING FOR LOW-RESISTANCE AND THERMALLY STABLE SALICIDE (SELF-ALIGNED SILICIDE) IN DEEP-SUBMICRON DUAL-GATE CMOS (COMPLEMENTARY METAL-OXIDE SEMICONDUCTORS), JPN J A P 1, 34(2B), 1995, pp. 776-781
Authors:
NAGAI Y
MIHASHI Y
KAKIMOTO S
IKEDA K
SUSAKI W
Citation: Y. Nagai et al., STUDY ON DROOP CHARACTERISTICS OF LASER-DIODES AS LIGHT-SOURCES OF LASER-BEAM PRINTER, JPN J A P 1, 34(12A), 1995, pp. 6385-6390
Authors:
MATSUOKA T
TAGUCHI S
TANIGUCHI K
HAMAGUCHI C
KAKIMOTO S
TAKAGI J
Citation: T. Matsuoka et al., THICKNESS DEPENDENCE OF FURNACE N2O-OXYNITRIDATION EFFECTS ON BREAKDOWN OF THERMAL OXIDES, IEICE transactions on electronics, E78C(3), 1995, pp. 248-254
Authors:
KOTAKI H
NAKANO M
KAKIMOTO S
UDA K
SATO Y
Citation: H. Kotaki et al., NOVEL TITANIUM SALICIDE TECHNOLOGY FOR 0. 25 MU-M DUAL-GATE CMOS, Sharp giho, (63), 1995, pp. 38-43
Authors:
NAGAI Y
SHIGIHARA K
KARAKIDA S
KAKIMOTO S
OTSUBO M
IKEDA K
Citation: Y. Nagai et al., CHARACTERISTICS OF LASER-DIODES WITH A PARTIALLY INTERMIXED GAAS-ALGAAS QUANTUM-WELL, IEEE journal of quantum electronics, 31(8), 1995, pp. 1364-1370
Authors:
SHIGIHARA K
AOYAGI T
KAKIMOTO S
AIGA M
OSTUBO M
IKEDA K
Citation: K. Shigihara et al., ANTIREFLECTION COATING FOR LASER-DIODES, Electronics Letters, 31(18), 1995, pp. 1574-1576