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LU F
PERRY CH
CREMINS A
KALKHORAN NM
SOREF RA
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Authors:
WEI HF
CHUNG JE
KALKHORAN NM
NAMAVAR F
ANNAMALAI NK
SHEDD WM
Citation: Hf. Wei et al., IMPROVEMENT OF RADIATION HARDNESS IN FULLY-DEPLETED SOI N-MOSFETS USING GE-IMPLANTATION, IEEE transactions on nuclear science, 41(6), 1994, pp. 2291-2296
Authors:
NAMAVAR F
KALKHORAN NM
CLAVERIE A
LILIENTALWEBER Z
WEBER ER
SEKULAMOISE PA
VERNON S
HAVEN V
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