AAAAAA

   
Results: 1-20 |
Results: 20
ION-IMPLANTATION OF POROUS GALLIUM-PHOSPHIDE
Authors: USHAKOV VV DRAVIN VA MELNIK NN ZAVARITSKAYA TV LOIKO NN KARAVANSKII VA KONSTANTINOVA EA TIMOSHENKO VY
Citation: Vv. Ushakov et al., ION-IMPLANTATION OF POROUS GALLIUM-PHOSPHIDE, Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 886-890
LIGHT-ABSORPTION AND PHOTOLUMINESCENCE OF POROUS SILICON
Authors: OBRAZTSOV AN KARAVANSKII VA OKUSHI H WATANABE II
Citation: An. Obraztsov et al., LIGHT-ABSORPTION AND PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 896-900
THE STRUCTURE OF POROUS GALLIUM-PHOSPHIDE
Authors: ZAVARITSKAYA TN KVIT AV MELNIK NN KARAVANSKII VA
Citation: Tn. Zavaritskaya et al., THE STRUCTURE OF POROUS GALLIUM-PHOSPHIDE, Semiconductors, 32(2), 1998, pp. 213-217
RADIATION HARDNESS OF POROUS SILICON
Authors: USHAKOV VV DRAVIN VA MELNIK NN KARAVANSKII VA KONSTANTINOVA EA TIMOSHENKO VY
Citation: Vv. Ushakov et al., RADIATION HARDNESS OF POROUS SILICON, Semiconductors, 31(9), 1997, pp. 966-969
THE CHANGE IN THE MECHANISM OF THE POROUS SILICON FORMATION DURING ANODIC POLARIZATION
Authors: GAVRILOV SA ZAVARITSKAYA TN KARAVANSKII VA MELNIK NN PODZOROV VV SOROKINA IN
Citation: Sa. Gavrilov et al., THE CHANGE IN THE MECHANISM OF THE POROUS SILICON FORMATION DURING ANODIC POLARIZATION, Russian journal of electrochemistry, 33(9), 1997, pp. 985-989
ENHANCED PHOTOLUMINESCENCE FROM POROUS SILICON FORMED BY NONSTANDARD PREPARATION
Authors: BELOGOROKHOV AI ENDERLEIN R TABATA A LEITE JR KARAVANSKII VA BELOGOROKHOVA LI
Citation: Ai. Belogorokhov et al., ENHANCED PHOTOLUMINESCENCE FROM POROUS SILICON FORMED BY NONSTANDARD PREPARATION, Physical review. B, Condensed matter, 56(16), 1997, pp. 10276-10282
RELATION BETWEEN PHOTOLUMINESCENCE SIGNALS AND SURFACE-STATES OF POROUS SILICON, INCLUDING FREESTANDING POROUS SILICON FILMS
Authors: BELOGOROKHOV AI KARAVANSKII VA BELOGOROKHOVA LI
Citation: Ai. Belogorokhov et al., RELATION BETWEEN PHOTOLUMINESCENCE SIGNALS AND SURFACE-STATES OF POROUS SILICON, INCLUDING FREESTANDING POROUS SILICON FILMS, Semiconductors, 30(7), 1996, pp. 621-625
OPTICAL NONLINEARITIES AND CARRIER TRAPPING DYNAMICS IN CDS AND CUXS NANOCRYSTALS
Authors: KLIMOV VI HARINGBOLIVAR P KURZ H KARAVANSKII VA
Citation: Vi. Klimov et al., OPTICAL NONLINEARITIES AND CARRIER TRAPPING DYNAMICS IN CDS AND CUXS NANOCRYSTALS, Superlattices and microstructures, 20(3), 1996, pp. 395-404
MECHANISMS FOR OPTICAL NONLINEARITIES AND ULTRAFAST CARRIER DYNAMICS IN CUXS NANOCRYSTALS
Authors: KLIMOV VI KARAVANSKII VA
Citation: Vi. Klimov et Va. Karavanskii, MECHANISMS FOR OPTICAL NONLINEARITIES AND ULTRAFAST CARRIER DYNAMICS IN CUXS NANOCRYSTALS, Physical review. B, Condensed matter, 54(11), 1996, pp. 8087-8094
SURFACE-RELATED PHONON MODE IN POROUS GAP
Authors: TIGINYANU IM URSAKI VV KARAVANSKII VA SOKOLOV VN RAPTIS YS ANASTASSAKIS E
Citation: Im. Tiginyanu et al., SURFACE-RELATED PHONON MODE IN POROUS GAP, Solid state communications, 97(8), 1996, pp. 675-678
MODIFICATION OF POROUS SILICON IN ULTRAHIGH-VACUUM AND CONTRIBUTION OF GRAPHITE NANOCRYSTALLITES TO PHOTOLUMINESCENCE
Authors: ELTSOV KN KARAVANSKII VA MARTYNOV VV
Citation: Kn. Eltsov et al., MODIFICATION OF POROUS SILICON IN ULTRAHIGH-VACUUM AND CONTRIBUTION OF GRAPHITE NANOCRYSTALLITES TO PHOTOLUMINESCENCE, JETP letters, 63(2), 1996, pp. 119-125
RAMAN-SCATTERING AND PHOTOLUMINESCENCE OF POROUS SILICON
Authors: KARAVANSKII VA OBRAZTSOV AN
Citation: Va. Karavanskii et An. Obraztsov, RAMAN-SCATTERING AND PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 29(4), 1995, pp. 302-306
3RD-ORDER OPTICAL NONLINEARITY AND ALL-OPTICAL SWITCHING IN POROUS SILICON
Authors: HENARI FZ MORGENSTERN K BLAU WJ KARAVANSKII VA DNEPROVSKII VS
Citation: Fz. Henari et al., 3RD-ORDER OPTICAL NONLINEARITY AND ALL-OPTICAL SWITCHING IN POROUS SILICON, Applied physics letters, 67(3), 1995, pp. 323-325
TIME-RESOLVED BLUE AND ULTRAVIOLET PHOTOLUMINESCENCE IN POROUS GAP
Authors: ANEDDA A SERPI A KARAVANSKII VA TIGINYANU IM ICHIZLI VM
Citation: A. Anedda et al., TIME-RESOLVED BLUE AND ULTRAVIOLET PHOTOLUMINESCENCE IN POROUS GAP, Applied physics letters, 67(22), 1995, pp. 3316-3318
OPTICAL NONLINEARITIES AND THE DIMENSIONA L QUANTIZATION EFFECT IN POROUS SILICON
Authors: GUSHCHINA NV DNEPROVSKII VS DOVYDENKO EY KARAVANSKII VA OKOROKOV DK
Citation: Nv. Gushchina et al., OPTICAL NONLINEARITIES AND THE DIMENSIONA L QUANTIZATION EFFECT IN POROUS SILICON, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 106(6), 1994, pp. 1830-1838
INFRARED-SPECTROSCOPY AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON FILMS - EFFECT OF FORMING CONDITIONS
Authors: BELOGOROKHOV AI KARAVANSKII VA BELOGOROKHOVA LI OBRAZTSOV AN
Citation: Ai. Belogorokhov et al., INFRARED-SPECTROSCOPY AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON FILMS - EFFECT OF FORMING CONDITIONS, Semiconductors, 28(8), 1994, pp. 800-803
INTENSE PHOTOLUMINESCENCE IN POROUS GALLIUM-PHOSPHIDE
Authors: BELOGOROKHOV AI KARAVANSKII VA OBRAZTSOV AN TIMOSHENKO VY
Citation: Ai. Belogorokhov et al., INTENSE PHOTOLUMINESCENCE IN POROUS GALLIUM-PHOSPHIDE, JETP letters, 60(4), 1994, pp. 274-279
NONLINEAR-TRANSMISSION SPECTRA OF POROUS SILICON - MANIFESTATION OF SIZE QUANTIZATION
Authors: KLIMOV VI DNEPROVSKII VS KARAVANSKII VA
Citation: Vi. Klimov et al., NONLINEAR-TRANSMISSION SPECTRA OF POROUS SILICON - MANIFESTATION OF SIZE QUANTIZATION, Applied physics letters, 64(20), 1994, pp. 2691-2693
QUANTUM CONFINEMENT EFFECTS IN SEMICONDUC TOR-DOPED OS-GLASSES AND KS-GLASSES
Authors: DNEPROVSKII VS KARAVANSKII VA KLIMOV VI
Citation: Vs. Dneprovskii et al., QUANTUM CONFINEMENT EFFECTS IN SEMICONDUC TOR-DOPED OS-GLASSES AND KS-GLASSES, Fizika tverdogo tela, 35(10), 1993, pp. 2626-2634
QUANTUM-SIZE EFFECT AND PRONOUNCED OPTICAL NONLINEARITIES IN POROUS SILICON
Authors: DNEPROVSKII VS KARAVANSKII VA KLIMOV VI MASLOV AP
Citation: Vs. Dneprovskii et al., QUANTUM-SIZE EFFECT AND PRONOUNCED OPTICAL NONLINEARITIES IN POROUS SILICON, JETP letters, 57(7), 1993, pp. 406-409
Risultati: 1-20 |