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Results: 1-19 |
Results: 19
MIXED-SIGNAL INTEGRATED-CIRCUITS BASED ON GAAS HEMTS
Authors: THIEDE A WANG ZG SCHLECHTWEG M LANG M LEBER P LAO ZH NOWOTNY U HURM V RIEGERMOTZER M LUDWIG M SEDLER M KOHLER K BRONNER W HORNUNG J HULSMANN A KAUFEL G RAYNOR B SCHNEIDER J JAKOBUS T SCHROTH J BERROTH M
Citation: A. Thiede et al., MIXED-SIGNAL INTEGRATED-CIRCUITS BASED ON GAAS HEMTS, IEEE transactions on very large scale integration (VLSI) systems, 6(1), 1998, pp. 6-17
MODULATOR DRIVER AND PHOTORECEIVER FOR 20 GB S OPTIC-FIBER LINKS/
Authors: LAO ZH HURM V THIEDE A BERROTH M LUDWIG M LIENHART H SCHLECHTWEG M HORNUNG J BRONNER W KOHLER K HULSMANN A KAUFEL G JAKOBUS T
Citation: Zh. Lao et al., MODULATOR DRIVER AND PHOTORECEIVER FOR 20 GB S OPTIC-FIBER LINKS/, Journal of lightwave technology, 16(8), 1998, pp. 1491-1497
55GHZ DYNAMIC FREQUENCY-DIVIDER IC
Authors: LAO Z THIEDE A HORNUNG J SCHLECHTWEG M LIENHART H BRONNER W HULSMANN A JAKOBUS T SEIBEL J SEDLER M KAUFEL G
Citation: Z. Lao et al., 55GHZ DYNAMIC FREQUENCY-DIVIDER IC, Electronics Letters, 34(20), 1998, pp. 1973-1974
HEMT CIRCUITS FOR SIGNAL DATA PROCESSING
Authors: BERROTH M HURM V LANG M LAO Z THIEDE A WANG ZG BANGERT A BRONNER W HULSMANN A KAUFEL G KOHLER K RAYNOR B JAKOBUS T
Citation: M. Berroth et al., HEMT CIRCUITS FOR SIGNAL DATA PROCESSING, Solid-state electronics, 41(10), 1997, pp. 1407-1412
20-40 GB S 0.2-MU-M GAAS HEMT CHIP SET FOR OPTICAL-DATA RECEIVER/
Authors: LANG M LAO ZH SCHLECHTWEG M THIEDE A RIEGERMOTZER M SEDLER M BRONNER W KAUFEL G KOHLER K HULSMANN A RAYNOR B
Citation: M. Lang et al., 20-40 GB S 0.2-MU-M GAAS HEMT CHIP SET FOR OPTICAL-DATA RECEIVER/, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1384-1393
35-GHZ STATIC AND 48-GHZ DYNAMIC FREQUENCY-DIVIDER ICS USING 0.2-MU-MALGAAS GAAS-HEMTS/
Authors: LAO ZH BRONNER W THIEDE A SCHLECHTWEG M HULSMANN A RIEGERMOTZER M KAUFEL G RAYNOR B SEDLER M
Citation: Zh. Lao et al., 35-GHZ STATIC AND 48-GHZ DYNAMIC FREQUENCY-DIVIDER ICS USING 0.2-MU-MALGAAS GAAS-HEMTS/, IEEE journal of solid-state circuits, 32(10), 1997, pp. 1556-1562
45GBIT S ALGAAS GAAS HEMT MULTIPLEXER IC
Authors: LAO Z NOWOTNY U THIEDE A HURM V KAUFEL G RIEGERMOTZER M BRONNER W SEIBEL J HULSMANN A
Citation: Z. Lao et al., 45GBIT S ALGAAS GAAS HEMT MULTIPLEXER IC, Electronics Letters, 33(7), 1997, pp. 589-590
20 GBIT S LONG-WAVELENGTH MONOLITHIC INTEGRATED PHOTORECEIVER GROWN ON GAAS/
Authors: HURM V BENZ W BRONNER W FINK T KAUFEL G KOHLER K LAO Z LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M WINDSCHEIF J
Citation: V. Hurm et al., 20 GBIT S LONG-WAVELENGTH MONOLITHIC INTEGRATED PHOTORECEIVER GROWN ON GAAS/, Electronics Letters, 33(7), 1997, pp. 624-626
SUBNANOSECOND ACCESS TIME 2K SINE-COSINE-ROM IN ALGAAS GAAS/ALGAAS QUANTUM-WELL HEMT TECHNOLOGY/
Authors: THIEDE A BUSHEHRI E NOWOTNY U RIEGERMOTZER M SEDLER M BRONNER W HORNUNG J KAUFEL G RAYNOR B SCHNEIDER J
Citation: A. Thiede et al., SUBNANOSECOND ACCESS TIME 2K SINE-COSINE-ROM IN ALGAAS GAAS/ALGAAS QUANTUM-WELL HEMT TECHNOLOGY/, Electronics Letters, 33(5), 1997, pp. 428-429
LOW-POWER 20 GBIT S DATA DECISION AND 17 GHZ STATIC FREQUENCY-DIVIDERICS WITH 1.5 V SUPPLY VOLTAGE/
Authors: LAO Z BERROTH M THIEDE A RIEGERMOTZER M KAUFEL G SEIBEL J BRONNER W HULSMANN A SCHNEIDER J RAYNOR B
Citation: Z. Lao et al., LOW-POWER 20 GBIT S DATA DECISION AND 17 GHZ STATIC FREQUENCY-DIVIDERICS WITH 1.5 V SUPPLY VOLTAGE/, Electronics Letters, 33(4), 1997, pp. 289-290
10GBIT S LONG-WAVELENGTH PIN-HEMT PHOTORECEIVER GROWN ON GAAS/
Authors: HURM V BENZ W BRONNER W DAMMANN M JAKOBUS T KAUFEL G KOHLER K LAO Z LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M
Citation: V. Hurm et al., 10GBIT S LONG-WAVELENGTH PIN-HEMT PHOTORECEIVER GROWN ON GAAS/, Electronics Letters, 33(19), 1997, pp. 1653-1654
LITHOGRAPHIC AND PATTERN TRANSFER OF A NOVEL DEEP-UV PHOTORESIST - ARCH2
Authors: FALCIGNO P MUNZEL N HOLZWARTH H SCHACHT HT MERTESDORF C BRONNER W KAUFEL G TIMKO A NALAMASU O
Citation: P. Falcigno et al., LITHOGRAPHIC AND PATTERN TRANSFER OF A NOVEL DEEP-UV PHOTORESIST - ARCH2, Microelectronic engineering, 30(1-4), 1996, pp. 279-282
20GBIT S FULLY INTEGRATED MSM-PHOTODIODE ALGAAS/GAAS-HEMT OPTOELECTRONIC RECEIVER/
Authors: HURM V BENZ W BERROTH M BRONNER W KAUFEL G KOHLER K LUDWIG M OLANDER E RAYNOR B ROSENZWEIG J
Citation: V. Hurm et al., 20GBIT S FULLY INTEGRATED MSM-PHOTODIODE ALGAAS/GAAS-HEMT OPTOELECTRONIC RECEIVER/, Electronics Letters, 32(7), 1996, pp. 683-685
LOW-POWER DATA DECISION IC FOR 20-40GBIT S DATA LINKS USING 0.2-MU-M ALGAAS/GAAS HEMTS/
Authors: WANG ZG BERROTH M THIEDE A RIEGERMOTZER M HOFMANN P HULSMANN A KAUFEL G KOHLER K RAYNOR B SCHNEIDER J
Citation: Zg. Wang et al., LOW-POWER DATA DECISION IC FOR 20-40GBIT S DATA LINKS USING 0.2-MU-M ALGAAS/GAAS HEMTS/, Electronics Letters, 32(20), 1996, pp. 1855-1856
10 AND 20GBIT S CLOCK RECOVERY GAAS IC WITH 288-DEGREES PHASE-SHIFTING FUNCTION/
Authors: WANG ZG BERROTH M THIEDE A RIEGERMOTZER M HOFMANN P HULSMANN A KAUFEL G KOHLER K RAYNOR B SCHNEIDER J
Citation: Zg. Wang et al., 10 AND 20GBIT S CLOCK RECOVERY GAAS IC WITH 288-DEGREES PHASE-SHIFTING FUNCTION/, Electronics Letters, 32(16), 1996, pp. 1498-1500
30GHZ STATIC FREQUENCY-DIVIDER USING A 0.21-MU-M ALGAAS GAAS/ALGAAS HEMT TECHNOLOGY/
Authors: LANG M BERROTH M RIEGERMOTZER M HULSMANN A HOFFMANN P KAUFEL G KOHLER K RAYNOR B
Citation: M. Lang et al., 30GHZ STATIC FREQUENCY-DIVIDER USING A 0.21-MU-M ALGAAS GAAS/ALGAAS HEMT TECHNOLOGY/, Electronics Letters, 31(24), 1995, pp. 2111-2112
17GHZ BROAD-BAND AMPLIFIER WITH 25DB GAIN USING A 0.3-MU-M ALGAAS GAAS/ALGAAS HEMT TECHNOLOGY/
Authors: LANG M BERROTH M RIEGERMOTZER M WANG ZG HULSMANN A HOFFMANN P KAUFEL G KOHLER K RAYNOR B
Citation: M. Lang et al., 17GHZ BROAD-BAND AMPLIFIER WITH 25DB GAIN USING A 0.3-MU-M ALGAAS GAAS/ALGAAS HEMT TECHNOLOGY/, Electronics Letters, 31(23), 1995, pp. 1993-1995
RELATING MU-WAVE MAPPED DATA TO PHYSICAL PARAMETERS FOR MODFETS
Authors: BRAUNSTEIN J TASKER PJ SCHLECHTWEG M HULSMANN A KAUFEL G KOHLER K
Citation: J. Braunstein et al., RELATING MU-WAVE MAPPED DATA TO PHYSICAL PARAMETERS FOR MODFETS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 37-40
FABRICATION AND PERFORMANCE OF 1-DIM MODFETS
Authors: HULSMANN A ROMAN P BRAUNSTEIN J KAUFEL G KOHLER K JAKOBUS T
Citation: A. Hulsmann et al., FABRICATION AND PERFORMANCE OF 1-DIM MODFETS, Microelectronic engineering, 21(1-4), 1993, pp. 393-396
Risultati: 1-19 |