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Results:
1-10
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Results: 10
Authors:
SAHA M
RAWAT BS
KHANNA MK
NAUTIYAL BR
Citation: M. Saha et al., LIQUID-LIQUID EQUILIBRIUM STUDIES ON TOLUENE PLUS HEPTANE PLUS SOLVENT, Journal of chemical and engineering data, 43(3), 1998, pp. 422-426
Authors:
KHANNA MK",MANEESHA,"THOMAS C
GUPTA RS
HALDAR S
Citation: C. Khanna Mk",maneesha,"thomas et al., AN ANALYTICAL MODEL FOR ANOMALOUS THRESHOLD VOLTAGE BEHAVIOR OF SHORT-CHANNEL MOSFETS, Solid-state electronics, 41(9), 1997, pp. 1386-1388
Authors:
MASOHAN A
PARSAD G
GUPTA P
KHANNA MK
CHOPRA SK
RAWAT BS
Citation: A. Masohan et al., LIQUID-LIQUID EQUILIBRIUM STUDIES ON SYSTEMS COMPRISING MIXTURES OF TETRALIN OR C-4-ALKYLTETRALINS OR C-6-ALKYLTETRALINS WITH CETANE AND SULFOLANE, Fluid phase equilibria, 123(1-2), 1996, pp. 205-213
Authors:
MANEESHA,"KHANNA MK
HADLAR S
GUPTA RS
Citation: Mk. Maneesha,"khanna et al., AN EMPIRICAL FRINGING CAPACITANCE DEPENDENT THRESHOLD VOLTAGE MODEL FOR NONUNIFORMLY DOPED SUBMICRON MOSFETS, Solid-state electronics, 39(11), 1996, pp. 1687-1691
Authors:
MANEESHA,"HALDAR S
KHANNA MK
GUPTA RS
Citation: S. Maneesha,"haldar et al., ANALYTICAL THEORY OF 2-DIMENSIONAL CHARGE SHEET MODEL FOR SHORT-CHANNEL MOSFETS UNDER NON-LINEAR CHARGE CONTROL, Solid-state electronics, 38(1), 1995, pp. 197-202
Authors:
AGGARWAL V
KHANNA MK
SOOD R
HALDAR S
GUPTA RS
Citation: V. Aggarwal et al., ANALYTICAL 2-DIMENSIONAL MODELING FOR POTENTIAL DISTRIBUTION AND THRESHOLD VOLTAGE OF THE SHORT-CHANNEL FULLY DEPLETED SOI (SILICON-ON-INSULATOR) MOSFET, Solid-state electronics, 37(8), 1994, pp. 1537-1542
Authors:
HALDAR S
KHANNA MK",MANEESHA,"SOOD R",MANJU,"AGGARWAL V
GUPTA RS
Citation: S. Haldar et al., THRESHOLD VOLTAGE SHIFT IN DEPLETION MODE INSULATED GATE FIELD-EFFECTTRANSISTORS, Solid-state electronics, 37(2), 1994, pp. 377-379
Authors:
HALDAR S
KHANNA MK
GUPTA RS
Citation: S. Haldar et al., NARROW GATE EFFECT ON DEPLETION MODE INSULATED GATE FIELD-EFFECT TRANSISTOR, Solid-state electronics, 37(10), 1994, pp. 1717-1721
Authors:
KHANNA MK
HALDAR S
GUPTA RS
Citation: Mk. Khanna et al., TEMPERATURE-DEPENDENT THRESHOLD VOLTAGE MODEL FOR A NONUNIFORMLY DOPED SHORT-CHANNEL MOSFET, International journal of electronics, 77(3), 1994, pp. 283-290
Authors:
HALDAR S",MANEESHA,"KHANNA MK
GUPTA RS
Citation: Mk. Haldar S",maneesha,"khanna et Rs. Gupta, A DEVICE MODEL FOR AN ION-IMPLANTED MESFET WITH HALF-PEARSON AND HALF-GAUSSIAN DISTRIBUTION UNDER POST-ANNEAL CONDITIONS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1674-1677
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1-10
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