Authors:
KIELY PA
DOCTER DP
VANG TA
TAYLOR GW
EVALDSSON PA
CLAISSE PR
TELL B
BROWNGOEBELER KF
Citation: Pa. Kiely et al., AC CHARACTERIZATION OF THE P-INVERTED BURIED-CHANNEL HETEROSTRUCTURE FET AND ITS SUITABILITY FOR COMPLEMENTARY ELECTRONICS, IEE proceedings. Circuits, devices and systems, 142(2), 1995, pp. 105-108
Citation: Gw. Taylor et Pa. Kiely, SHORT-CHANNEL THRESHOLD DEPENDENCE OF THE INVERSION CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1871-1873
Citation: Gw. Taylor et Pa. Kiely, THEORETICAL AND EXPERIMENTAL RESULTS FOR THE INVERSION CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 392-400
Authors:
KIELY PA
TAYLOR GW
DOCTER DP
EVALDSSON PA
VANG TA
TELL B
BROWNGOEBELER KF
Citation: Pa. Kiely et al., COMPLEMENTARY TRANSISTOR TECHNOLOGY FOR USE IN OPTOELECTRONIC INTEGRATED-CIRCUITS, IEE proceedings. Part G. Circuits, devices and systems, 140(4), 1993, pp. 279-284
Citation: Pa. Kiely et al., INVERSION CHANNEL HFET WITH UNITY CURRENT GAIN FREQUENCY OF 14GHZ ANDSURFACE-EMITTING LASER FROM A SINGLE EPITAXIAL-GROWTH, Electronics Letters, 29(17), 1993, pp. 1521-1523
Authors:
EVALDSSON PA
VANG TA
TAYLOR GW
SARGOOD SK
KIELY PA
COOKE P
Citation: Pa. Evaldsson et al., MONOLITHIC INTEGRATION OF LASERS WITH FET AND BIPOLAR-TRANSISTORS IN INVERSION CHANNEL TECHNOLOGY, Electronics Letters, 29(1), 1993, pp. 60-62