Authors:
GROSSMANN M
HOFFMANN S
GUSOWSKI S
WASER R
STREIFFER SK
BASCERI C
PARKER CB
LASH SE
KINGON AI
Citation: M. Grossmann et al., RESISTANCE DEGRADATION BEHAVIOR OF BA0.7SR0.3TIO3 THIN-FILMS COMPAREDTO MECHANISMS FOUND IN TITANATE CERAMICS AND SINGLE-CRYSTALS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 603-614
Authors:
KIM SH
KIM DJ
HONG JG
STREIFFER SK
KINGON AI
Citation: Sh. Kim et al., THERMALLY-INDUCED IMPRINT PROPERTIES OF CHEMICAL SOLUTION DERIVED PLZT THIN-FILMS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 653-662
Authors:
SALEH AM
SCHINDLER G
SARMA C
HAASE DG
KOCH CC
KINGON AI
Citation: Am. Saleh et al., ISOLATION TECHNIQUES AND ELECTRICAL CHARACTERIZATION OF SINGLE GRAIN-BOUNDARIES OF BI2SR2CACU2O2 HIGH-TEMPERATURE SUPERCONDUCTOR, Physica. C, Superconductivity, 295(3-4), 1998, pp. 225-234
Authors:
BILODEAU SM
CARL R
VANBUSKIRK PC
ROEDER JF
BASCERI C
LASH SE
PARKER CB
STREIFFER SK
KINGON AI
Citation: Sm. Bilodeau et al., DIELECTRIC-PROPERTIES AND MICROSTRUCTURE OF THIN BST FILMS, Journal of the Korean Physical Society, 32, 1998, pp. 1591-1594
Authors:
LEE WJ
WOOLCOTT RR
BASCERI C
LEE HY
STREIFFER SK
KINGON AI
YANG DY
Citation: Wj. Lee et al., ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 THIN-FILMS PREPARED BY LIQUID DELIVERY MOCVD, Journal of the Korean Physical Society, 32, 1998, pp. 1652-1656
Authors:
LEE WJ
BASCERI C
STREIFFER SK
KINGON AI
YANG DY
PARK Y
KIM HG
Citation: Wj. Lee et al., IR AND RU BOTTOM ELECTRODES FOR (BA, SR) TIO3 THIN-FILMS DEPOSITED BYLIQUID DELIVERY SOURCE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 323(1-2), 1998, pp. 285-290
Authors:
THOMAS D
KINGON AI
AUCIELLO O
WASER R
SCHUMACHER M
Citation: D. Thomas et al., PULSED-LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF LAYERED SRBI2TA2O9 FILMS AND INTEGRATION INTO CAPACITORS FOR NONVOLATILE MEMORIES, Integrated ferroelectrics, 14(1-4), 1997, pp. 51-57
Authors:
DIETZ GW
SCHUMACHER M
WASER R
STREIFFER SK
BASCERI C
KINGON AI
Citation: Gw. Dietz et al., LEAKAGE CURRENTS IN BA0.7SR0.3TIO3 THIN-FILMS FOR ULTRAHIGH-DENSITY DYNAMIC RANDOM-ACCESS MEMORIES, Journal of applied physics, 82(5), 1997, pp. 2359-2364
Citation: C. Basceri et al., THE DIELECTRIC RESPONSE AS A FUNCTION OF TEMPERATURE AND FILM THICKNESS OF FIBER-TEXTURED (BA,SR)TIO3 THIN-FILMS GROWN BY CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 82(5), 1997, pp. 2497-2504
Authors:
DAT R
AUCIELLO O
LICHTENWALNER DJ
KINGON AI
Citation: R. Dat et al., PULSED-LASER ABLATION-DEPOSITION OF LA0.5SR0.5COO3 FOR USE AS ELECTRODES IN NONVOLATILE FERROELECTRIC MEMORIES, Journal of materials research, 11(6), 1996, pp. 1514-1519
Citation: Jk. Lee et al., ELECTRICAL CHARACTERIZATION OF PT SRBI2TA2O9/PT CAPACITORS FABRICATEDBY THE PULSED-LASER ABLATED DEPOSITION TECHNIQUE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 900-904
Citation: M. Vellaikal et Ai. Kingon, ELECTRICAL AND MICROSTRUCTURAL CHARACTERIZATION OF LEAD TITANATE THIN-FILMS DEPOSITED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ONTO PLATINUM AND MAGNESIUM-OXIDE, Thin solid films, 287(1-2), 1996, pp. 139-145
Citation: R. Dat et al., SURFACE-ROUGHNESS OF PBZRXTI1-XO3 THIN-FILMS PRODUCED BY PULSED-LASERABLATION-DEPOSITION, Thin solid films, 283(1-2), 1996, pp. 45-48
Authors:
ALSHAREEF HN
CHEN X
LICHTENWALNER DJ
KINGON AI
Citation: Hn. Alshareef et al., ANALYSIS OF THE OXIDATION-KINETICS AND BARRIER LAYER PROPERTIES OF ZRN AND PT RU THIN-FILMS FOR DRAM APPLICATIONS/, Thin solid films, 280(1-2), 1996, pp. 265-270
Authors:
SARMA C
SCHINDLER G
HAASE DG
KOCH CC
KINGON AI
Citation: C. Sarma et al., HYSTERETIC CURRENT-VOLTAGE CHARACTERISTICS OF PLATELET BOUNDARIES IN MELT-TEXTURED BULK AG-DOPED YBA2CU3O7,DELTA AND HEATING EFFECTS, Cryogenics, 36(2), 1996, pp. 123-125
Authors:
DAT R
LICHTENWALNER DJ
AUCIELLO O
KINGON AI
Citation: R. Dat et al., LEAD-ZIRCONATE-TITANATE FERROELECTRIC CAPACITORS PRODUCED ON SAPPHIREAND GALLIUM-ARSENIDE SUBSTRATES, Integrated ferroelectrics, 9(4), 1995, pp. 309-316
Citation: R. Dat et al., EFFECTS OF TEMPERATURE ON THE FERROELECTRIC PROPERTIES OF PBZR0.53TI0.47O3 BASED CAPACITORS PREPARED BY PULSED LASER-ABLATION DEPOSITION, Integrated ferroelectrics, 9(4), 1995, pp. 333-338
Citation: Kd. Gifford et al., CONTROL OF ELECTRICAL-PROPERTIES OF ION-BEAM SPUTTER-DEPOSITED PZT-BASED HETEROSTRUCTURE CAPACITORS, Integrated ferroelectrics, 7(1-4), 1995, pp. 195-206
Authors:
CHEN X
KINGON AI
ALSHAREEF HN
BELLUR KR
GIFFORD K
AUCIELLO O
Citation: X. Chen et al., LEAKAGE AND INTERFACE ENGINEERING IN TITANATE THIN-FILMS FOR NONVOLATILE FERROELECTRIC MEMORY AND ULSI DRAMS, Integrated ferroelectrics, 7(1-4), 1995, pp. 291-306
Authors:
AUCIELLO O
GIFFORD KD
LICHTENWALNER DJ
DAT R
ALSHAREEF HN
BELLUR KR
KINGON AI
Citation: O. Auciello et al., A REVIEW OF COMPOSITION-STRUCTURE-PROPERTY RELATIONSHIPS FOR PZT-BASED HETEROSTRUCTURE CAPACITORS, Integrated ferroelectrics, 6(1-4), 1995, pp. 173-187
Citation: Ai. Kingon, PROCEEDINGS OF THE 7TH INTERNATIONAL-SYMPOSIUM ON INTEGRATED FERROELECTRICS - COLORADO-SPRINGS, COLORADO, USA, MARCH 20-22, 1995, Integrated ferroelectrics, 11(1-4), 1995, pp. 13-14