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Results:
1-17
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Results: 17
Authors:
KOGLER R
YANKOV RA
KASCHNY JR
POSSELT M
DANILIN AB
SKORUPA W
Citation: R. Kogler et al., SPATIAL-DISTRIBUTION OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI - THE RP 2 EFFECT/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(4), 1998, pp. 493-502
Authors:
HENKEL T
HEERA V
KOGLER R
SKORUPA W
Citation: T. Henkel et al., IN-SITU LASER REFLECTOMETRY STUDY OF THE AMORPHIZATION OF SILICON-CARBIDE BY MEV ION-IMPLANTATION, Journal of applied physics, 84(6), 1998, pp. 3090-3097
Authors:
HENKEL T
HEERA V
KOGLER R
SKORUPA W
SEIBT M
Citation: T. Henkel et al., KINETICS OF ION-BEAM-INDUCED INTERFACIAL AMORPHIZATION IN SILICON, Journal of applied physics, 82(11), 1997, pp. 5360-5373
Authors:
SERRE C
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
CALVOBARRIO L
MORANTE JR
ESTEVE J
ACERO MC
SKORUPA W
KOGLER R
Citation: C. Serre et al., SYNTHESIS OF SIC MICROSTRUCTURES IN SI TECHNOLOGY BY HIGH-DOSE CARBONIMPLANTATION - ETCH-STOP PROPERTIES, Journal of the Electrochemical Society, 144(6), 1997, pp. 2211-2215
Authors:
WERNER P
EICHLER S
MARIANI G
KOGLER R
SKORUPA W
Citation: P. Werner et al., INVESTIGATION OF CXSI DEFECTS IN C-IMPLANTED SILICON BY TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 70(2), 1997, pp. 252-254
Authors:
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
PEREZRODRIGUEZ A
MORANTE JR
KOGLER R
SKORUPA W
Citation: A. Romanorodriguez et al., DETAILED ANALYSIS OF BETA-SIC FORMATION BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 282-285
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
CABEZAS R
GONZALEZVARONA O
MORANTE JR
KOGLER R
SKORUPA W
RODRIGUEZ A
Citation: A. Perezrodriguez et al., HIGH-TEMPERATURE HIGH-DOSE C ION-IMPLANTATION IN EPITAXIAL SIGE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 173-176
Authors:
PACAUD Y
STOEMENOS J
BRAUER G
YANKOV RA
HEERA V
VOELSKOW M
KOGLER R
SKORUPA W
Citation: Y. Pacaud et al., RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 177-180
Authors:
PEREZRODRIGUEZ A
KOGLER R
CALVOBARRIO L
SERRE C
ROMANORODRIGUEZ A
HEERA V
SKORUPA W
MORANTE JR
Citation: A. Perezrodriguez et al., ION-BEAM-ASSISTED RECRYSTALLIZATION OF SIC SI STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 334-337
Authors:
SERRE C
CALVOBARRIO L
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
PACAUD Y
KOGLER R
HEERA V
SKORUPA W
Citation: C. Serre et al., ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS - STRUCTURAL-ANALYSIS AND RECRYSTALLIZATION, Journal of applied physics, 79(9), 1996, pp. 6907-6913
Authors:
HEERA V
HENKEL T
KOGLER R
SKORUPA W
Citation: V. Heera et al., EVIDENCE FOR DIFFUSION-LIMITED KINETICS OF ION-BEAM-INDUCED EPITAXIALCRYSTALLIZATION IN SILICON, Physical review. B, Condensed matter, 52(22), 1995, pp. 15776-15784
Authors:
SERRE C
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
KOGLER R
SKORUPA W
Citation: C. Serre et al., SPECTROSCOPIC CHARACTERIZATION OF PHASES FORMED BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON, Journal of applied physics, 77(7), 1995, pp. 2978-2984
Authors:
HEERA V
STOEMENOS J
KOGLER R
SKORUPA W
Citation: V. Heera et al., AMORPHIZATION AND RECRYSTALLIZATION OF 6H-SIC BY ION-BEAM IRRADIATION, Journal of applied physics, 77(7), 1995, pp. 2999-3009
Authors:
HEERA V
KOGLER R
SKORUPA W
STOEMENOS J
Citation: V. Heera et al., COMPLETE RECRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE LAYERS BY IONIRRADIATION, Applied physics letters, 67(14), 1995, pp. 1999-2001
Authors:
KOGLER R
VONBORANY J
PANKNIN D
SKORUPA W
Citation: R. Kogler et al., ELECTRICAL EFFECTS OF RESIDUAL DEFECTS IN SI AFTER HIGH-ENERGY IMPLANTATION OF GE+ IONS AND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 350-353
Authors:
HEERA V
KOGLER R
SKORUPA W
GROTZSCHEL R
Citation: V. Heera et al., DOSE-RATE DEPENDENCE OF THE ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 538-542
Authors:
KOGLER R
HEERA V
SKORUPA W
GLASER E
BACHMANN T
RUCK D
Citation: R. Kogler et al., REDUCED REVERSE TEMPERATURE OF ION-BEAM-INDUCED AMORPHIZATION CRYSTALLIZATION FOR INTERMITTENT BEAM IRRADIATION OF SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 556-558
Risultati:
1-17
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