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Results:
1-18
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Results: 18
Authors:
TARVAINEN E
RONKAINEN H
KUIVALAINEN P
Citation: E. Tarvainen et al., A 1.6-GHZ CURRENT-CONTROLLED OSCILLATOR WITH INTEGRATED INDUCTOR, Analog integrated circuits and signal processing, 15(1), 1998, pp. 85-95
Authors:
EZER Y
HARKONEN J
SOKOLOV V
SAARILAHTI J
KAITILA J
KUIVALAINEN P
Citation: Y. Ezer et al., DIFFUSION BARRIER PERFORMANCE OF THIN CR FILMS IN THE CU CR/SI STRUCTURE/, Materials research bulletin, 33(9), 1998, pp. 1331-1337
Authors:
HONKANEN K
SIIRTOLA T
MAJAMAA T
HOVINEN A
KUIVALAINEN P
Citation: K. Honkanen et al., A COMPARATIVE-STUDY OF SI AND GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Physica scripta. T, T69, 1997, pp. 163-166
Authors:
KUIVALAINEN P
TARVAINEN E
RONKAINEN H
MAJAMAA T
HOVINEN A
Citation: P. Kuivalainen et al., MODEL FOR THE CUTOFF FREQUENCY IN RF MOSFETS, Physica scripta. T, T69, 1997, pp. 193-195
Authors:
TARVAINEN E
RONKAINEN H
KATTELUS H
RIIHISAARI T
KUIVALAINEN P
Citation: E. Tarvainen et al., PLANAR INDUCTORS ON SILICON FOR INTEGRATED RF CIRCUITS, Physica scripta. T, T69, 1997, pp. 295-297
Authors:
TASKINEN K
MAJAMAA T
KUIVALAINEN P
Citation: K. Taskinen et al., WIGNER-FUNCTION MODELING OF MESOSCOPIC SEMICONDUCTOR-DEVICES, Physica scripta. T, T69, 1997, pp. 298-301
Authors:
TARVAINEN E
RONKAINEN H
KATTELUS H
RIIHISAARI T
KUIVALAINEN P
Citation: E. Tarvainen et al., 1.8GHZ CURRENT-CONTROLLED OSCILLATOR IC IMPLEMENTED BY USING INTEGRATED INDUCTORS AND 0.8-MU-M BICMOS TECHNOLOGY, Electronics Letters, 32(16), 1996, pp. 1465-1467
Authors:
ANDERSSON M
XIA Z
KUIVALAINEN P
POHJONEN H
Citation: M. Andersson et al., COMPACT SI1-XGEX SI HETEROJUNCTION BIPOLAR-TRANSISTOR MODEL FOR DEVICE AND CIRCUIT SIMULATION/, IEE proceedings. Circuits, devices and systems, 142(1), 1995, pp. 1-7
Authors:
GRAHN K
ERANEN S
KUIVALAINEN P
Citation: K. Grahn et al., DIAMOND POWER TRANSISTOR PERFORMANCE, DIAMOND AND RELATED MATERIALS, 3(11-12), 1994, pp. 1301-1307
Authors:
ANDERSSON M
KUIVALAINEN P
XIA Z
POHJONEN H
RONKAINEN H
Citation: M. Andersson et al., A COMPACT MODEL FOR THE CUTOFF FREQUENCY IN HIGH-SPEED BIPOLAR-TRANSISTORS, Physica scripta. T, 54, 1994, pp. 136-138
Authors:
GRAHN KJ
KUIVALAINEN P
ERANEN S
Citation: Kj. Grahn et al., EFFECT OF PARTIAL IONIZATION AND THE CHARACTERISTICS OF LATERAL POWERDIAMOND MESFETS, Physica scripta. T, 54, 1994, pp. 151-153
Authors:
KUIVALAINEN P
Citation: P. Kuivalainen, QUANTUM CORRECTIONS TO THE THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSFETS, Physica scripta. T, 54, 1994, pp. 154-156
Authors:
ANDERSSON M
KUIVALAINEN P
Citation: M. Andersson et P. Kuivalainen, PHYSICAL MODELING OF VERTICAL DMOS POWER TRANSISTORS FOR CIRCUIT SIMULATION, Physica scripta. T, 54, 1994, pp. 157-158
Authors:
SAARILAHTI J
XIA Z
RONKAINEN H
KUIVALAINEN P
SUNI I
Citation: J. Saarilahti et al., RBS CHANNELING SPECTROSCOPY OF GE IMPLANTED EPITAXIAL SI1-XGEX LAYERS, Physica scripta. T, 54, 1994, pp. 212-215
Authors:
XIA Z
SAARILAHTI J
RISTOLAINEN E
ERANEN S
RONKAINEN H
KUIVALAINEN P
PAINE D
TUOMI T
Citation: Z. Xia et al., AMORPHIZATION OF SILICON BY HIGH-DOSE GERMANIUM ION-IMPLANTATION WITHNO EXTERNAL COOLING MECHANISM, Applied surface science, 78(3), 1994, pp. 321-330
Authors:
XIA Z
SAARILAHTI J
RONKAINEN H
ERANEN S
SUNI I
MOLARIUS J
KUIVALAINEN P
RISTOLAINEN E
TUOMI T
Citation: Z. Xia et al., RAPID THERMAL ANNEALING OF SI1-XGEX LAYERS FORMED BY GERMANIUM ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 88(3), 1994, pp. 247-254
Authors:
FRANSSILA S
PALOHEIMO J
KUIVALAINEN P
Citation: S. Franssila et al., NOVEL SUB-100-NM THIN-FILM TRANSISTORS, Electronics Letters, 29(8), 1993, pp. 713-714
Authors:
GRAHN K
XIA Z
KUIVALAINEN P
KARLSTEEN M
WILLANDER M
Citation: K. Grahn et al., EFFECT OF ION-IMPLANTED GERMANIUM PROFILE ON THE CHARACTERISTICS OF SI1-XGEX SI HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(18), 1993, pp. 1621-1623
Risultati:
1-18
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