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Results: 1-25 | 26-40
Results: 1-25/40
EFFECT OF TI ON THE GALVANOMAGNETIC PROPERTIES OF SINGLE-CRYSTAL SB2-XTIXTE3
Authors: KULBACHINSKII VA ZEMITAN GV DRASAR C LOSTAK P
Citation: Va. Kulbachinskii et al., EFFECT OF TI ON THE GALVANOMAGNETIC PROPERTIES OF SINGLE-CRYSTAL SB2-XTIXTE3, Physics of the solid state, 40(3), 1998, pp. 404-407
DISTINCTIVE FEATURES OF THE FAR-INFRARED REFLECTION SPECTRA OF THE SEMIMAGNETIC SEMICONDUCTORS HG1-XMNXTE1-YSEY
Authors: BELOGOROKHOV AI KULBACHINSKII VA MARYANCHUK PD CHURILOV IA
Citation: Ai. Belogorokhov et al., DISTINCTIVE FEATURES OF THE FAR-INFRARED REFLECTION SPECTRA OF THE SEMIMAGNETIC SEMICONDUCTORS HG1-XMNXTE1-YSEY, Semiconductors, 32(5), 1998, pp. 488-490
EFFECT OF SELENIUM ON THE GALVANOMAGNETIC PROPERTIES OF THE DILUTED MAGNETIC SEMICONDUCTOR HG1-XMNXTE1-YSEY
Authors: KULBACHINSKII VA CHURILOV IA MARYANCHUK PD LUNIN RA
Citation: Va. Kulbachinskii et al., EFFECT OF SELENIUM ON THE GALVANOMAGNETIC PROPERTIES OF THE DILUTED MAGNETIC SEMICONDUCTOR HG1-XMNXTE1-YSEY, Semiconductors, 32(1), 1998, pp. 49-51
LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/
Authors: KULBACHINSKII VA KYTIN VG LUNIN RA MALKINA IG ZVONKOV BN SAFYANOV YN
Citation: Va. Kulbachinskii et al., LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 107-111
CONDUCTING WIRES EMBEDDED IN AN I-GAAS MATRIX FOR ELECTRONIC APPLICATIONS
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP DEMIN AV
Citation: Va. Kulbachinskii et al., CONDUCTING WIRES EMBEDDED IN AN I-GAAS MATRIX FOR ELECTRONIC APPLICATIONS, Microelectronic engineering, 43-4, 1998, pp. 319-324
MAGNETOTRANSPORT IN CARBON FOILS FABRICATED FROM EXFOLIATED GRAPHITE
Authors: VANSCHAIJK RTF DEVISSER A IONOV SG KULBACHINSKII VA KYTIN VG
Citation: Rtf. Vanschaijk et al., MAGNETOTRANSPORT IN CARBON FOILS FABRICATED FROM EXFOLIATED GRAPHITE, Physical review. B, Condensed matter, 57(15), 1998, pp. 8900-8906
GALVANOMAGNETIC PROPERTIES OF HG1-XMNXTE1-YSEY SEMIMAGNETIC SEMICONDUCTORS
Authors: KULBACHINSKII VA CHURILOV IA MARYANCHUK PD LUNIN RA
Citation: Va. Kulbachinskii et al., GALVANOMAGNETIC PROPERTIES OF HG1-XMNXTE1-YSEY SEMIMAGNETIC SEMICONDUCTORS, Journal of experimental and theoretical physics, 85(5), 1997, pp. 989-993
QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY AND DECREASE OF ELECTRON-CONCENTRATION BY HIGH ELECTRIC-FIELDS IN GAAS DELTA-DOPED BY SN ON VICINAL SUBSTRATE STRUCTURES
Authors: KULBACHINSKII VA LUNIN RA BOGDANOV EV KYTIN VG SENICHKIN AP
Citation: Va. Kulbachinskii et al., QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY AND DECREASE OF ELECTRON-CONCENTRATION BY HIGH ELECTRIC-FIELDS IN GAAS DELTA-DOPED BY SN ON VICINAL SUBSTRATE STRUCTURES, Physica. B, Condensed matter, 229(3-4), 1997, pp. 262-267
THERMOELECTRIC-POWER AND SCATTERING OF CARRIERS IN BI2-XSNXTE3 WITH LAYERED STRUCTURE
Authors: KULBACHINSKII VA NEGISHI H SASAKI M GIMAN Y INOUE M LOSTAK P HORAK J
Citation: Va. Kulbachinskii et al., THERMOELECTRIC-POWER AND SCATTERING OF CARRIERS IN BI2-XSNXTE3 WITH LAYERED STRUCTURE, Physica status solidi. b, Basic research, 199(2), 1997, pp. 505-513
ELECTRON MIGRATIONS IN DIMENSIONAL QUANTI ZATION SUBZONES IN COMBINEDALLOYED GAAS GAALAS HETEROSTRUCTURES WITH HIGH-CONCENTRATION OF 2D-ELECTRONS/
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP
Citation: Va. Kulbachinskii et al., ELECTRON MIGRATIONS IN DIMENSIONAL QUANTI ZATION SUBZONES IN COMBINEDALLOYED GAAS GAALAS HETEROSTRUCTURES WITH HIGH-CONCENTRATION OF 2D-ELECTRONS/, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 110(4), 1996, pp. 1517-1532
CHARACTERISTIC FEATURES OF TRANSPORT PHENOMENA IN ALTERNATIVELY DOPEDGAAS GA1-XALXAS HETEROSTRUCTURES/
Authors: BRANDT NB KULBACHINSKII VA KYTIN VG LUNIN RA KADUSHKIN VI SHANGINA EL DEVISSER A
Citation: Nb. Brandt et al., CHARACTERISTIC FEATURES OF TRANSPORT PHENOMENA IN ALTERNATIVELY DOPEDGAAS GA1-XALXAS HETEROSTRUCTURES/, Semiconductors, 30(4), 1996, pp. 365-367
GALVANOMAGNETIC PROPERTIES OF LOW-DENSITY FOILS FABRICATED FROM EXFOLIATED GRAPHITE
Authors: KULBACHINSKII VA IONOV SG AVDEEV VV RANDT NB LAPIN SA MANDREA AG KUZMIN IV DEVISSER A
Citation: Va. Kulbachinskii et al., GALVANOMAGNETIC PROPERTIES OF LOW-DENSITY FOILS FABRICATED FROM EXFOLIATED GRAPHITE, Journal of physics and chemistry of solids, 57(6-8), 1996, pp. 893-897
INFLUENCE OF PRESSURE ON THE ENERGY-SPECTRUM OF LOW STAGE GRAPHITE-INTERCALATION COMPOUNDS
Authors: IONOV SG KULBACHINSKII VA BRANDT NB KUVSHINNIKOV SV AVDEEV VV
Citation: Sg. Ionov et al., INFLUENCE OF PRESSURE ON THE ENERGY-SPECTRUM OF LOW STAGE GRAPHITE-INTERCALATION COMPOUNDS, Journal of physics and chemistry of solids, 57(6-8), 1996, pp. 943-946
ELECTRON-MOBILITY IN SELECTIVELY DOPED GAAS INXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: KULBACHINSKII VA KYTIN VG BABUSHKINA TS MALKINA IG ZVONKOV BN DEVISSER A
Citation: Va. Kulbachinskii et al., ELECTRON-MOBILITY IN SELECTIVELY DOPED GAAS INXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of low temperature physics, 102(5-6), 1996, pp. 499-508
QUENCHING OF PHOTOCONDUCTIVITY BY A STRONG ELECTRIC-FIELD IN TIN DELTA-DOPED GAAS STRUCTURES
Authors: KULBACHINSKII VA LUNIN RA BOGDANOV EV KYTIN VG SENICHKIN AP KADUSHKIN VI
Citation: Va. Kulbachinskii et al., QUENCHING OF PHOTOCONDUCTIVITY BY A STRONG ELECTRIC-FIELD IN TIN DELTA-DOPED GAAS STRUCTURES, JETP letters, 63(5), 1996, pp. 336-341
LOW-TEMPERATURE SUBBAND 2D ELECTRON MOBILITIES IN HEAVY DELTA-DOPED AND MODULATION-DOPED GAAS GAALAS HETEROSTRUCTURES/
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP DEVISSER A
Citation: Va. Kulbachinskii et al., LOW-TEMPERATURE SUBBAND 2D ELECTRON MOBILITIES IN HEAVY DELTA-DOPED AND MODULATION-DOPED GAAS GAALAS HETEROSTRUCTURES/, Czechoslovak journal of Physics, 46, 1996, pp. 2457-2458
LOW-TEMPERATURE NEGATIVE MAGNETORESISTANCE IN THE DELTA-DOPED BY SN AND SI ON VICINAL AND SINGULAR SUBSTRATES GAAS STRUCTURES
Authors: KYTIN VG KULBACHINSKII VA LUNIN RA BUGAEV AS SENICHKIN AP
Citation: Vg. Kytin et al., LOW-TEMPERATURE NEGATIVE MAGNETORESISTANCE IN THE DELTA-DOPED BY SN AND SI ON VICINAL AND SINGULAR SUBSTRATES GAAS STRUCTURES, Czechoslovak journal of Physics, 46, 1996, pp. 2513-2514
ELECTRICAL AND MAGNETIC-PROPERTIES OF THE SEMIMAGNETIC SEMICONDUCTORSHG1-XMNXTE1-YSEY
Authors: KULBACHINSKII VA MARYANCHUK PD CHURILOV IA
Citation: Va. Kulbachinskii et al., ELECTRICAL AND MAGNETIC-PROPERTIES OF THE SEMIMAGNETIC SEMICONDUCTORSHG1-XMNXTE1-YSEY, Semiconductors, 29(11), 1995, pp. 1047-1050
ANISOTROPY OF TRANSFER PHENOMENA IN STRUC TURES WITH DELTA-SN QUANTUMHOLES ON GAAS VICINAL FACETS
Authors: KULBACHINSKII VA KYTIN VG KADUSHKIN VI SENICHKIN AP
Citation: Va. Kulbachinskii et al., ANISOTROPY OF TRANSFER PHENOMENA IN STRUC TURES WITH DELTA-SN QUANTUMHOLES ON GAAS VICINAL FACETS, Fizika tverdogo tela, 37(9), 1995, pp. 2693-2698
SHUBNIKOVV-DE GAAS EFFECT AND ENERGY-SPEC TRUM OF INXSB2-XTE3 SOLID-SOLUTIONS
Authors: KULBACHINSKII VA CHAIKA AN DASHEVSKII ZM LOSTAK P KHORAK Y
Citation: Va. Kulbachinskii et al., SHUBNIKOVV-DE GAAS EFFECT AND ENERGY-SPEC TRUM OF INXSB2-XTE3 SOLID-SOLUTIONS, Fizika tverdogo tela, 37(7), 1995, pp. 1997-2001
ELECTRON-MOBILITY IN MODULE-ALLOYED STRUC TURES OF INXGA1-XAS GAAS MULTIPLE-QUANTUM HOLES/
Authors: KULBACHINSKII VA KYTIN VG DEVISSER A ZVONKOV BN BABUSHKINA TS MALKINA IG
Citation: Va. Kulbachinskii et al., ELECTRON-MOBILITY IN MODULE-ALLOYED STRUC TURES OF INXGA1-XAS GAAS MULTIPLE-QUANTUM HOLES/, Fizika tverdogo tela, 37(6), 1995, pp. 1771-1771
TIME DECAY OF THERMOREMANENT MAGNETIZATION IN CLUSTER-GLASS PHASE OF INTERCALATION COMPOUND FEXTIS2 STUDIED BY USE OF ANOMALOUS HALL-EFFECT
Authors: HARA Y NEGISHI H SASAKI M INOUE M KULBACHINSKII VA
Citation: Y. Hara et al., TIME DECAY OF THERMOREMANENT MAGNETIZATION IN CLUSTER-GLASS PHASE OF INTERCALATION COMPOUND FEXTIS2 STUDIED BY USE OF ANOMALOUS HALL-EFFECT, Journal of magnetism and magnetic materials, 145(1-2), 1995, pp. 157-164
ELECTRONIC AND MAGNETIC-PROPERTIES OF THE DILUTED MAGNETIC SEMICONDUCTOR HG1-XMNXTE1-YSEY
Authors: KULBACHINSKII VA MARYANCHUK PD CHURILOV IA INOUE M SASAKI M NEGISHI H HARA Y
Citation: Va. Kulbachinskii et al., ELECTRONIC AND MAGNETIC-PROPERTIES OF THE DILUTED MAGNETIC SEMICONDUCTOR HG1-XMNXTE1-YSEY, Semiconductor science and technology, 10(4), 1995, pp. 463-468
VALENCE-BAND CHANGES IN SB2-XINXTE3 AND SB2TE3-YSEY BY TRANSPORT AND SHUBNIKOV-DE HAAS EFFECT MEASUREMENTS
Authors: KULBACHINSKII VA DASHEVSKII ZM INOUE M SASAKI M NEGISHI H GAO WX LOSTAK P HORAK J DEVISSER A
Citation: Va. Kulbachinskii et al., VALENCE-BAND CHANGES IN SB2-XINXTE3 AND SB2TE3-YSEY BY TRANSPORT AND SHUBNIKOV-DE HAAS EFFECT MEASUREMENTS, Physical review. B, Condensed matter, 52(15), 1995, pp. 10915-10922
SHUBNIKOV-DE HAAS EFFECT IN LOW-STAGE ACCEPTOR-TYPE GRAPHITE-INTERCALATION COMPOUNDS
Authors: KULBACHINSKII VA IONOV SG LAPIN SA DEVISSER A
Citation: Va. Kulbachinskii et al., SHUBNIKOV-DE HAAS EFFECT IN LOW-STAGE ACCEPTOR-TYPE GRAPHITE-INTERCALATION COMPOUNDS, Physical review. B, Condensed matter, 51(16), 1995, pp. 10313-10319
Risultati: 1-25 | 26-40