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Results: 1-12 |
Results: 12
CURRENT-VOLTAGE CHARACTERISTICS OF GAN AND ALGAN P-I-N-DIODES
Authors: KUZNETSOV NI IRVINE KG
Citation: Ni. Kuznetsov et Kg. Irvine, CURRENT-VOLTAGE CHARACTERISTICS OF GAN AND ALGAN P-I-N-DIODES, Semiconductors, 32(3), 1998, pp. 335-338
HEMATOPOIETIC MICROENVIRONMENT IN HIV PATIENTS
Authors: RUGAL VI KRAVETS VN PONOMARENKO VM KUZNETSOV NI
Citation: Vi. Rugal et al., HEMATOPOIETIC MICROENVIRONMENT IN HIV PATIENTS, British Journal of Haematology, 102(1), 1998, pp. 164-164
EFFECT OF DEEP LEVELS ON CURRENT EXCITATION IN 6H-SIC DIODES
Authors: KUZNETSOV NI EDMOND JA
Citation: Ni. Kuznetsov et Ja. Edmond, EFFECT OF DEEP LEVELS ON CURRENT EXCITATION IN 6H-SIC DIODES, Semiconductors, 31(10), 1997, pp. 1049-1052
STRUCTURAL AND ELECTRICAL-PROPERTIES OF SCHOTTKY BARRIERS ON N-GAN
Authors: KALININA EV KUZNETSOV NI BABANIN AI DMITRIEV VA SHCHUKAREV AV
Citation: Ev. Kalinina et al., STRUCTURAL AND ELECTRICAL-PROPERTIES OF SCHOTTKY BARRIERS ON N-GAN, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1528-1531
ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/
Authors: KUZNETSOV NI GUBENCO AE NIKOLAEV AE MELNIK YV BLASHENKOV MN NIKITINA IP DMITRIEV VA
Citation: Ni. Kuznetsov et al., ELECTRICAL CHARACTERISTICS OF GAN 6H-SIC N-P HETEROJUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 74-78
SCHOTTKY BARRIERS ON N-GAN GROWN ON SIC
Authors: KALININA EV KUZNETSOV NI DMITRIEV VA IRVINE KG CARTER CH
Citation: Ev. Kalinina et al., SCHOTTKY BARRIERS ON N-GAN GROWN ON SIC, Journal of electronic materials, 25(5), 1996, pp. 831-834
ELECTRIC BREAKDOWN IN GAN P-N-JUNCTIONS
Authors: DMITRIEV VA IRVINE KG CARTER CH KUZNETSOV NI KALININA EV
Citation: Va. Dmitriev et al., ELECTRIC BREAKDOWN IN GAN P-N-JUNCTIONS, Applied physics letters, 68(2), 1996, pp. 229-231
DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION
Authors: KUZNETSOV NI ZUBRILOV AS
Citation: Ni. Kuznetsov et As. Zubrilov, DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 181-184
PROPERTIES OF A CENTER ASSOCIATED WITH AN AL IMPURITY IN 6H-SIC
Authors: KUZNETSOV NI DMITRIEV AP FURMAN AS
Citation: Ni. Kuznetsov et al., PROPERTIES OF A CENTER ASSOCIATED WITH AN AL IMPURITY IN 6H-SIC, Semiconductors, 28(6), 1994, pp. 584-586
SHIFT OF THE ELECTROLUMINESCENCE PEAK IN 6H-SIC-BASED DIODES WITH THEFORWARD CURRENT-DENSITY
Authors: ANIKIN MM KUZNETSOV NI LEBEDEV AA POLETAEV NE STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., SHIFT OF THE ELECTROLUMINESCENCE PEAK IN 6H-SIC-BASED DIODES WITH THEFORWARD CURRENT-DENSITY, Semiconductors, 28(3), 1994, pp. 270-273
DEEP-CENTER CURRENT SPECTROSCOPY IN P-N STRUCTURES BASED ON 6H-SIC WITH AN INTERNAL FIELD
Authors: ANIKIN MM KUZNETSOV NI LEBEDEV AA SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., DEEP-CENTER CURRENT SPECTROSCOPY IN P-N STRUCTURES BASED ON 6H-SIC WITH AN INTERNAL FIELD, Semiconductors, 28(3), 1994, pp. 278-280
CURRENT RELAXATION SPECTROSCOPY OF DEEP LEVELS (I-DLTS METHOD)
Authors: KUZNETSOV NI
Citation: Ni. Kuznetsov, CURRENT RELAXATION SPECTROSCOPY OF DEEP LEVELS (I-DLTS METHOD), Semiconductors, 27(10), 1993, pp. 925-928
Risultati: 1-12 |