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Results: 1-18 |
Results: 18
STRUCTURAL-PROPERTIES OF GA2O3(GD2O3)-GAAS INTERFACES
Authors: HONG M MARCUS MA KWO J MANNAERTS JP SERGENT AM CHOU LJ HSIEH KC CHENG KY
Citation: M. Hong et al., STRUCTURAL-PROPERTIES OF GA2O3(GD2O3)-GAAS INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1395-1397
DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE
Authors: HONG M REN F KUO JM HOBSON WS KWO J MANNAERTS JP LOTHIAN JR CHEN YK
Citation: M. Hong et al., DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1398-1400
GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/
Authors: REN F KUO JM HONG M HOBSON WS LOTHIAN JR LIN J TSAI HS MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/, IEEE electron device letters, 19(8), 1998, pp. 309-311
OXIDE-GAAS INTERFACIAL ELECTRONIC-PROPERTIES CHARACTERIZED BY MODULATION SPECTROSCOPY OF PHOTOREFLECTANCE
Authors: HWANG JS WANG YC CHOU WY TYAN SL HONG M MANNAERTS JP KWO J
Citation: Js. Hwang et al., OXIDE-GAAS INTERFACIAL ELECTRONIC-PROPERTIES CHARACTERIZED BY MODULATION SPECTROSCOPY OF PHOTOREFLECTANCE, Journal of applied physics, 83(5), 1998, pp. 2857-2859
DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE
Authors: REN F HONG M HOBSON WS KUO JM LOTHIAN JR MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE, Solid-state electronics, 41(11), 1997, pp. 1751-1753
NOVEL GA2O3(GD2O3) PASSIVATION TECHNIQUES TO PRODUCE LOW D-IT OXIDE-GAAS INTERFACES
Authors: HONG M MANNAERTS JP BOWER JE KWO J PASSLACK M HWANG WY TU LW
Citation: M. Hong et al., NOVEL GA2O3(GD2O3) PASSIVATION TECHNIQUES TO PRODUCE LOW D-IT OXIDE-GAAS INTERFACES, Journal of crystal growth, 175, 1997, pp. 422-427
LOW INTERFACE STATE DENSITY OXIDE-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY
Authors: HONG M PASSLACK M MANNAERTS JP KWO J CHU SNG MORIYA N HOU SY FRATELLO VJ
Citation: M. Hong et al., LOW INTERFACE STATE DENSITY OXIDE-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2297-2300
STRUCTURAL AND DIELECTRIC-PROPERTIES OF BA0.5SR0.5TIO3 THIN-FILMS GROWN ON SI BY OFF-AXIS SPUTTERING
Authors: HOU SY KWO J WATTS RK CHENG JY FORK DK
Citation: Sy. Hou et al., STRUCTURAL AND DIELECTRIC-PROPERTIES OF BA0.5SR0.5TIO3 THIN-FILMS GROWN ON SI BY OFF-AXIS SPUTTERING, Integrated ferroelectrics, 10(1-4), 1995, pp. 343-350
ZINC-INDIUM-OXIDE - A HIGH-CONDUCTIVITY TRANSPARENT CONDUCTING OXIDE
Authors: PHILLIPS JM CAVA RJ THOMAS GA CARTER SA KWO J SIEGRIST T KRAJEWSKI JJ MARSHALL JH PECK WF RAPKINE DH
Citation: Jm. Phillips et al., ZINC-INDIUM-OXIDE - A HIGH-CONDUCTIVITY TRANSPARENT CONDUCTING OXIDE, Applied physics letters, 67(15), 1995, pp. 2246-2248
STRUCTURE AND PROPERTIES OF EPITAXIAL BA0.5SR0.5TIO3 SRRUO3/ZRO2 HETEROSTRUCTURE ON SI GROWN BY OFF-AXIS SPUTTERING/
Authors: HOU SY KWO J WATTS RK CHENG JY FORK DK
Citation: Sy. Hou et al., STRUCTURE AND PROPERTIES OF EPITAXIAL BA0.5SR0.5TIO3 SRRUO3/ZRO2 HETEROSTRUCTURE ON SI GROWN BY OFF-AXIS SPUTTERING/, Applied physics letters, 67(10), 1995, pp. 1387-1389
NORMAL-STATE PHASE-DIAGRAM OF (LA,SR)(2)CUO4 FROM CHARGE AND SPIN DYNAMICS
Authors: BATLOGG B HWANG HY TAKAGI H CAVA RJ KAO HL KWO J
Citation: B. Batlogg et al., NORMAL-STATE PHASE-DIAGRAM OF (LA,SR)(2)CUO4 FROM CHARGE AND SPIN DYNAMICS, Physica. C, Superconductivity, 235, 1994, pp. 130-133
TEMPERATURE-DEPENDENCE OF RESONANT X-RAY MAGNETIC SCATTERING IN HOLMIUM
Authors: HELGESEN G HILL JP THURSTON TR GIBBS D KWO J HONG M
Citation: G. Helgesen et al., TEMPERATURE-DEPENDENCE OF RESONANT X-RAY MAGNETIC SCATTERING IN HOLMIUM, Physical review. B, Condensed matter, 50(5), 1994, pp. 2990-3004
SCALING OF THE TEMPERATURE-DEPENDENT HALL-EFFECT IN LA2-XSRXCUO4
Authors: HWANG HY BATLOGG B TAKAGI H KAO HL KWO J CAVA RJ KRAJEWSKI JJ PECK WF
Citation: Hy. Hwang et al., SCALING OF THE TEMPERATURE-DEPENDENT HALL-EFFECT IN LA2-XSRXCUO4, Physical review letters, 72(16), 1994, pp. 2636-2639
CHARGE DYNAMICS IN (LA,SR)2CUO4 - FROM UNDERDOPING TO OVERDOPING
Authors: BATLOGG B HWANG HY TAKAGI H KAO HL KWO J CAVA RJ
Citation: B. Batlogg et al., CHARGE DYNAMICS IN (LA,SR)2CUO4 - FROM UNDERDOPING TO OVERDOPING, Journal of low temperature physics, 95(1-2), 1994, pp. 23-31
TRANSPARENT CONDUCTING THIN-FILMS OF GAINO3
Authors: PHILLIPS JM KWO J THOMAS GA CARTER SA CAVA RJ HOU SY KRAJEWSKI JJ MARSHALL JH PECK WF RAPKINE DH VANDOVER RB
Citation: Jm. Phillips et al., TRANSPARENT CONDUCTING THIN-FILMS OF GAINO3, Applied physics letters, 65(1), 1994, pp. 115-117
GAINO3 - A NEW TRANSPARENT CONDUCTING OXIDE
Authors: CAVA RJ PHILLIPS JM KWO J THOMAS GA VANDOVER RB CARTER SA KRAJEWSKI JJ PECK WF MARSHALL JH RAPKINE DH
Citation: Rj. Cava et al., GAINO3 - A NEW TRANSPARENT CONDUCTING OXIDE, Applied physics letters, 64(16), 1994, pp. 2071-2072
SYSTEMATICS OF TRANSPORT ANISOTROPY IN SINGLE-DOMAIN LA2-XSRXCUO4 FILMS
Authors: KAO HL KWO J TAKAGI H BATLOGG B
Citation: Hl. Kao et al., SYSTEMATICS OF TRANSPORT ANISOTROPY IN SINGLE-DOMAIN LA2-XSRXCUO4 FILMS, Physical review. B, Condensed matter, 48(13), 1993, pp. 9925-9928
MAGNETIC-PROPERTIES OF EPITAXIAL SINGLE-CRYSTAL ULTRATHIN FE3SI FILMSON GAAS (001)
Authors: LIOU SH MALHOTRA SS SHEN JX HONG M KWO J CHEN HS MANNAERTS JP
Citation: Sh. Liou et al., MAGNETIC-PROPERTIES OF EPITAXIAL SINGLE-CRYSTAL ULTRATHIN FE3SI FILMSON GAAS (001), Journal of applied physics, 73(10), 1993, pp. 6766-6768
Risultati: 1-18 |