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Results: 1-13 |
Results: 13
Electrical transport in nano-scale silicon devices
Authors: Kawaura, H Sakamoto, T
Citation: H. Kawaura et T. Sakamoto, Electrical transport in nano-scale silicon devices, IEICE TR EL, E84C(8), 2001, pp. 1037-1042
Hot electron characterization in Si-MOSFETs
Authors: Sakamoto, T Kawaura, H Baba, T Iizuka, T
Citation: T. Sakamoto et al., Hot electron characterization in Si-MOSFETs, NEC RES DEV, 41(4), 2000, pp. 368-371
New surface treatment using shot blast for improving oxidation resistance of TiAl-base alloys
Authors: Kawaura, H Kawahara, H Nishino, K Saito, T
Citation: H. Kawaura et al., New surface treatment using shot blast for improving oxidation resistance of TiAl-base alloys, J JPN METAL, 64(11), 2000, pp. 1027-1032
Transistor characteristics of 14-nm-gate-length EJ-MOSFET's
Authors: Kawaura, H Sakamoto, T Baba, T Ochiai, Y Fujita, J Sone, J
Citation: H. Kawaura et al., Transistor characteristics of 14-nm-gate-length EJ-MOSFET's, IEEE DEVICE, 47(4), 2000, pp. 856-860
Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal-oxide-semiconductor field-effect transistors
Authors: Kawaura, H Sakamoto, T Baba, T
Citation: H. Kawaura et al., Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 76(25), 2000, pp. 3810-3812
Characteristic length of hot-electron transport in silicon metal-oxide-semiconductor field-effect transistors
Authors: Sakamoto, T Kawaura, H Baba, T Iizuka, T
Citation: T. Sakamoto et al., Characteristic length of hot-electron transport in silicon metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 76(18), 2000, pp. 2618-2620
Single-electron memory fabricated from doped silicon-on-insulator film
Authors: Sakamoto, T Kawaura, H Baba, T
Citation: T. Sakamoto et al., Single-electron memory fabricated from doped silicon-on-insulator film, JPN J A P 1, 38(10), 1999, pp. 5851-5852
Nanofabrication toward sub-10 nm and its application to novel nanodevices
Authors: Sone, J Fujita, J Ochiai, Y Manako, S Matsui, S Nomura, E Baba, T Kawaura, H Sakamoto, T Chen, CD Nakamura, Y Tsai, JS
Citation: J. Sone et al., Nanofabrication toward sub-10 nm and its application to novel nanodevices, NANOTECHNOL, 10(2), 1999, pp. 135-141
EJ-MOSFETs: Toward 10-nm-scale ultimately miniaturized MOSFETs
Authors: Kawaura, H Sakamoto, T Fujita, J Ochiai, Y Baba, T
Citation: H. Kawaura et al., EJ-MOSFETs: Toward 10-nm-scale ultimately miniaturized MOSFETs, NEC RES DEV, 40(4), 1999, pp. 393-396
Single-electron transistors fabricated from a highly doped SOI film
Authors: Sakamoto, T Kawaura, H Baba, T
Citation: T. Sakamoto et al., Single-electron transistors fabricated from a highly doped SOI film, NEC RES DEV, 40(4), 1999, pp. 397-400
New surface treatment using a fluidized bed for improving oxidation resistance of TiAl-base alloys
Authors: Kawaura, H Nishino, K Saito, T
Citation: H. Kawaura et al., New surface treatment using a fluidized bed for improving oxidation resistance of TiAl-base alloys, J JPN METAL, 63(12), 1999, pp. 1584-1590
Direct observation of hot-electron energy distribution in silicon metal-oxide-semiconductor field-effect transistors
Authors: Sakamoto, T Kawaura, H Baba, T Iizuka, T
Citation: T. Sakamoto et al., Direct observation of hot-electron energy distribution in silicon metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 75(8), 1999, pp. 1113-1115
Single-electron memory using carrier traps in a silicon nitride layer
Authors: Sunamura, H Sakamoto, T Nakamura, Y Kawaura, H Tsai, JS Baba, T
Citation: H. Sunamura et al., Single-electron memory using carrier traps in a silicon nitride layer, APPL PHYS L, 74(23), 1999, pp. 3555-3557
Risultati: 1-13 |