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Results: 1-12 |
Results: 12
Determination of molecular parameters of the MHPB(H)PBC and MHPB(F)PBC antiferroelectric liquid crystals
Authors: Raszewski, Z Kedzierski, J Rutkowska, J Piecek, W Perkowski, P Czuprynski, K Dabrowski, R Drzewinski, W Zielinski, J Zmija, J
Citation: Z. Raszewski et al., Determination of molecular parameters of the MHPB(H)PBC and MHPB(F)PBC antiferroelectric liquid crystals, MOLEC CRYST, 366, 2001, pp. 2459-2468
Properties of system with induced SmCA phase
Authors: Rutkowska, J Kedzierski, J Raszewski, Z Perkowski, P Dabrowski, R Czuprynski, K Gauza, S
Citation: J. Rutkowska et al., Properties of system with induced SmCA phase, MOLEC CRYST, 366, 2001, pp. 2469-2480
Sub-50 nm p-channel FinFET
Authors: Huang, XJ Lee, WC Kuo, C Hisamoto, D Chang, LL Kedzierski, J Anderson, E Takeuchi, H Choi, YK Asano, K Subramanian, V King, TJ Bokor, J Hu, CM
Citation: Xj. Huang et al., Sub-50 nm p-channel FinFET, IEEE DEVICE, 48(5), 2001, pp. 880-886
Composite method for determination of liquid crystal material parameters
Authors: Kedzierski, J Kojdecki, MA Raszewski, Z Perkowski, P Rutkowska, J Piecek, W Lipinska, L Miszczyk, E
Citation: J. Kedzierski et al., Composite method for determination of liquid crystal material parameters, MOLEC CRYST, 352, 2000, pp. 511-518
Calixarene G-line double resist process with 15 nm resolution aid large area exposure capability
Authors: Kedzierski, J Anderson, E Bokor, J
Citation: J. Kedzierski et al., Calixarene G-line double resist process with 15 nm resolution aid large area exposure capability, J VAC SCI B, 18(6), 2000, pp. 3428-3430
Analysis of the dielectric anisotropy of typical nematics with the aid of the Maier-Meier equations
Authors: Urban, S Kedzierski, J Dabrowski, R
Citation: S. Urban et al., Analysis of the dielectric anisotropy of typical nematics with the aid of the Maier-Meier equations, Z NATURFO A, 55(3-4), 2000, pp. 449-456
A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain
Authors: Kedzierski, J Xuan, PQ Subramanian, V Bokor, J King, TJ Hu, CM Anderson, E
Citation: J. Kedzierski et al., A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain, SUPERLATT M, 28(5-6), 2000, pp. 445-452
Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel
Authors: Yeo, YC Subramanian, V Kedzierski, J King, TJ Bokor, J Hu, CM Xuan, PQ
Citation: Yc. Yeo et al., Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel, IEEE ELEC D, 21(4), 2000, pp. 161-163
FinFET - A self-aligned double-gate MOSFET scalable to 20 nm
Authors: Hisamoto, D Lee, WC Kedzierski, J Takeuchi, H Asano, K Kuo, C Anderson, E King, TJ Bokor, J Hu, CM
Citation: D. Hisamoto et al., FinFET - A self-aligned double-gate MOSFET scalable to 20 nm, IEEE DEVICE, 47(12), 2000, pp. 2320-2325
Investigation of response of CR-39, PM-355 and PM-500 types of nuclear track detectors to energetic carbon ions
Authors: Szydlowski, A Czyzewski, T Jaskola, M Sadowski, M Korman, A Kedzierski, J Kretschmer, W
Citation: A. Szydlowski et al., Investigation of response of CR-39, PM-355 and PM-500 types of nuclear track detectors to energetic carbon ions, RADIAT MEAS, 31(1-6), 1999, pp. 257-260
Novel method for silicon quantum wire transistor fabrication
Authors: Kedzierski, J Bokor, J Anderson, E
Citation: J. Kedzierski et al., Novel method for silicon quantum wire transistor fabrication, J VAC SCI B, 17(6), 1999, pp. 3244-3247
Influence of quadrupolar ordering factor on supermolecular structure in ferroelectric Sm C
Authors: Raszewski, Z Kedzierski, J Perkowski, P Rutkowska, J Piecek, W Zielinski, J Zmija, J Dabrowski, R
Citation: Z. Raszewski et al., Influence of quadrupolar ordering factor on supermolecular structure in ferroelectric Sm C, MOL CRYST A, 328, 1999, pp. 255-263
Risultati: 1-12 |