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Results: 1-15 |
Results: 15
Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth
Authors: Kessels, WMM Boogaarts, MGH Hoefnagels, JPM Schram, DC van de Sanden, MCM
Citation: Wmm. Kessels et al., Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth, J VAC SCI A, 19(3), 2001, pp. 1027-1029
Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry
Authors: Kessels, WMM Leroux, A Boogaarts, MGH Hoefnagels, JPM van de Sanden, MCM Schram, DC
Citation: Wmm. Kessels et al., Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry, J VAC SCI A, 19(2), 2001, pp. 467-476
On the growth mechanism of a-Si : H
Authors: Kessels, WMM Smets, AHM Marra, DC Aydil, ES Schram, DC van de Sanden, MCM
Citation: Wmm. Kessels et al., On the growth mechanism of a-Si : H, THIN SOL FI, 383(1-2), 2001, pp. 154-160
Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H-2-SiH4 plasma
Authors: Kessels, WMM Hoefnagels, JPM Boogaarts, MGH Schram, DC van de Sanden, MCM
Citation: Wmm. Kessels et al., Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H-2-SiH4 plasma, J APPL PHYS, 89(4), 2001, pp. 2065-2073
Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma
Authors: Kessels, WMM Severens, RJ Smets, AHM Korevaar, BA Adriaenssens, GJ Schram, DC van de Sanden, MCM
Citation: Wmm. Kessels et al., Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma, J APPL PHYS, 89(4), 2001, pp. 2404-2413
Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon
Authors: Kessels, WMM van de Sanden, MCM Schram, DC
Citation: Wmm. Kessels et al., Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon, J VAC SCI A, 18(5), 2000, pp. 2153-2163
High hole drift mobility in a-Si : H deposited at high growth rates for solar cell application
Authors: Korevaar, BA Adriaenssens, GJ Smets, AHM Kessels, WMM Song, HZ van de Sanden, MCM Schram, DC
Citation: Ba. Korevaar et al., High hole drift mobility in a-Si : H deposited at high growth rates for solar cell application, J NON-CRYST, 266, 2000, pp. 380-384
Modeling of the formation of cationic silicon clusters in a remote Ar/H-2/SiH4 plasma
Authors: Leroux, A Kessels, WMM Schram, DC van de Sanden, MCM
Citation: A. Leroux et al., Modeling of the formation of cationic silicon clusters in a remote Ar/H-2/SiH4 plasma, J APPL PHYS, 88(1), 2000, pp. 537-543
Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma
Authors: Kessels, WMM van de Sanden, MCM Severens, RJ Schram, DC
Citation: Wmm. Kessels et al., Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma, J APPL PHYS, 87(7), 2000, pp. 3313-3320
Cavity ring down detection of SiH3 on the broadband (A)over-tilde (2)A '(1) <- (X)over-tilde (2)A(1) transition in a remote Ar-H-2-SiH4 plasma
Authors: Boogaarts, MGH Bocker, PJ Kessels, WMM Schram, DC van de Sanden, MCM
Citation: Mgh. Boogaarts et al., Cavity ring down detection of SiH3 on the broadband (A)over-tilde (2)A '(1) <- (X)over-tilde (2)A(1) transition in a remote Ar-H-2-SiH4 plasma, CHEM P LETT, 326(5-6), 2000, pp. 400-406
Plasma and surface chemistry effects during high rate deposition of hydrogenated amorphous silicon
Authors: van de Sanden, MCM Kessels, WMM Severens, RJ Schram, DC
Citation: Mcm. Van De Sanden et al., Plasma and surface chemistry effects during high rate deposition of hydrogenated amorphous silicon, PLASMA PHYS, 41, 1999, pp. A365-A378
Formation of large positive silicon-cluster ions in a remote silane plasma
Authors: Kessels, WMM Leewis, CM Leroux, A van de Sanden, MCM Schram, DC
Citation: Wmm. Kessels et al., Formation of large positive silicon-cluster ions in a remote silane plasma, J VAC SCI A, 17(4), 1999, pp. 1531-1535
Formation of cationic silicon clusters in a remote silane plasma and theircontribution to hydrogenated amorphous silicon film growth
Authors: Kessels, WMM Leewis, CM van de Sanden, MCM Schram, DC
Citation: Wmm. Kessels et al., Formation of cationic silicon clusters in a remote silane plasma and theircontribution to hydrogenated amorphous silicon film growth, J APPL PHYS, 86(7), 1999, pp. 4029-4039
Plasma chemistry aspects of a-Si : H deposition using an expanding thermalplasma (vol 84, pg 2426, 1998)
Authors: van de Sanden, MCM Severens, RJ Kessels, WMM Meulenbroeks, RFG Schram, DC
Citation: Mcm. Van De Sanden et al., Plasma chemistry aspects of a-Si : H deposition using an expanding thermalplasma (vol 84, pg 2426, 1998), J APPL PHYS, 85(2), 1999, pp. 1243-1243
Diagnostics of deposition plasmas
Authors: Schram, DC van de Sanden, MCM Severens, RJ Kessels, WMM
Citation: Dc. Schram et al., Diagnostics of deposition plasmas, J PHYS IV, 8(P7), 1998, pp. 217-230
Risultati: 1-15 |