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Results:
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Results: 20
Authors:
Ryzhii, V
Khmyrova, I
Ishibashi, T
Bandara, SV
Gunapala, SD
Citation: V. Ryzhii et al., High-frequency characteristics of quantum well infrared photodetectors with blocking barrier, JPN J A P 1, 40(5A), 2001, pp. 3137-3142
Authors:
Ryzhii, V
Khmyrova, I
Pipa, V
Mitin, V
Willander, M
Citation: V. Ryzhii et al., Device model for quantum dot infrared photodetectors and their dark-current characteristics, SEMIC SCI T, 16(5), 2001, pp. 331-338
Authors:
Xu, W
Khmyrova, I
Ryzhii, V
Citation: W. Xu et al., Terahertz-photon-modified magnetotransport in a semiconductor in Voigt geometry - art. no. 085209, PHYS REV B, 6408(8), 2001, pp. 5209
Authors:
Ryzhii, V
Tsutsui, N
Khmyrova, I
Ikegami, T
Vaccaro, PO
Taniyama, H
Aida, T
Citation: V. Ryzhii et al., Steady-state characteristics of lateral p-n junction vertical-cavity surface-emitting lasers, J APPL PHYS, 90(6), 2001, pp. 2654-2659
Authors:
Ryzhii, M
Khmyrova, I
Citation: M. Ryzhii et I. Khmyrova, Comment on "Local responsivity in quantum well photodetectors", J APPL PHYS, 89(11), 2001, pp. 6563-6564
Authors:
Tsutsui, N
Ryzhii, V
Khmyrova, I
Vaccaro, PO
Taniyama, H
Aida, T
Citation: N. Tsutsui et al., High-frequency performance of lateral p-n junction photodiodes, IEEE J Q EL, 37(6), 2001, pp. 830-836
Authors:
Ryzhii, V
Khmyrova, I
Mitin, V
Stroscio, M
Willander, M
Citation: V. Ryzhii et al., On the detectivity of quantum-dot infrared photodetectors, APPL PHYS L, 78(22), 2001, pp. 3523-3525
Authors:
Tsutsui, N
Khmyrova, I
Ryzhii, V
Ikegami, T
Citation: N. Tsutsui et al., Effect of photon recycling in pixelless imaging device, JPN J A P 1, 39(9A), 2000, pp. 5080-5082
Authors:
Khmyrova, I
Ryzhii, V
Citation: I. Khmyrova et V. Ryzhii, Resonant detection and frequency multiplication in barrier-injection heterostructure transistors, JPN J A P 1, 39(8), 2000, pp. 4727-4732
Authors:
Ryzhii, V
Pipa, V
Khmyrova, I
Mitin, V
Willander, M
Citation: V. Ryzhii et al., Dark current in quantum dot infrared photodetectors, JPN J A P 2, 39(12B), 2000, pp. L1283-L1285
Authors:
Ryzhii, V
Khmyrova, I
Ryzhii, M
Suris, R
Hamaguchi, C
Citation: V. Ryzhii et al., Phenomenological theory of electric-field domains induced by infrared radiation in multiple quantum well structures, PHYS REV B, 62(11), 2000, pp. 7268-7274
Authors:
Tsutsui, N
Khmyrova, I
Ryzhii, V
Ikegami, T
Citation: N. Tsutsui et al., Analysis of photon recycling in light emitting diodes with nonuniform injection, J APPL PHYS, 88(6), 2000, pp. 3613-3617
Authors:
Ryzhii, V
Khmyrova, I
Shur, M
Citation: V. Ryzhii et al., Resonant detection and frequency multiplication of terahertz radiation utilizing plasma waves in resonant-tunneling transistors, J APPL PHYS, 88(5), 2000, pp. 2868-2871
Authors:
Ryzhii, M
Khmyrova, I
Citation: M. Ryzhii et I. Khmyrova, Comment on "Photoconductivity mechanism of quantum well infrared photodetectors under localized photoexcitation" [Appl. Phys. Lett. 73, 3432 (1998)], APPL PHYS L, 76(26), 2000, pp. 4010-4011
Authors:
Khmyrova, I
Ryzhii, M
Ryzhii, V
Suris, R
Hamaguchi, C
Citation: I. Khmyrova et al., Theoretical study of recharging instability in quantum well infrared photodetectors, JPN J A P 1, 38(12A), 1999, pp. 6654-6658
Authors:
Khmyrova, I
Bois, P
Ryzhii, V
Citation: I. Khmyrova et al., Electron spreading effects in quantum well pixelless imagers, PHYSICA B, 272(1-4), 1999, pp. 502-504
Authors:
Khmyrova, I
Ryzhii, V
Citation: I. Khmyrova et V. Ryzhii, A quasi-three-dimensional model for plasma resonances in hot electron transistors, MICROEL ENG, 47(1-4), 1999, pp. 349-351
Authors:
Ryzhii, V
Khmyrova, I
Bois, P
Citation: V. Ryzhii et al., Photon mechanism of image smearing in integrated QWIP-LED pixelless devices, IEEE J Q EL, 35(11), 1999, pp. 1693-1696
Authors:
Khmyrova, I
Citation: I. Khmyrova, Comment on "Lateral photocurrent spreading in single quantum well infraredphotodetectors" [Appl. Phys. Lett. 72, 2865 (1998)], APPL PHYS L, 75(6), 1999, pp. 876-877
Authors:
Khmyrova, I
Ryzhii, V
Ryzhii, M
Willander, M
Citation: I. Khmyrova et al., High-frequency response of metal-semiconductor-metal photodetectors limited by dynamic and recombination effects, JPN J A P 1, 37(12A), 1998, pp. 6352-6357
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