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Results: 1-11 |
Results: 11
Subnanometer resolution in depth profiling using glancing Auger electrons
Authors: Drozdov, MN Danil'tsev, VM Drozdov, YN Khrykin, OI Shashkin, VI
Citation: Mn. Drozdov et al., Subnanometer resolution in depth profiling using glancing Auger electrons, TECH PHYS L, 27(2), 2001, pp. 114-117
A new method for determining the sharpness of InGaAs/GaAs heterojunctions by auger depth profiling
Authors: Drozdov, MN Danil'tsev, VM Drozdov, YN Khrykin, OI Shashkin, VI
Citation: Mn. Drozdov et al., A new method for determining the sharpness of InGaAs/GaAs heterojunctions by auger depth profiling, TECH PHYS L, 27(10), 2001, pp. 868-870
Investigation of InGaAs based double quantum well heterostructures near the critical thickness transition
Authors: Vostokov, NV Gaponova, DM Daniltsev, VM Drozdov, YN Murel, AV Khrykin, OI Shashkin, VI Shuleshova, IY
Citation: Nv. Vostokov et al., Investigation of InGaAs based double quantum well heterostructures near the critical thickness transition, PHYS LOW-D, 3-4, 2001, pp. 303-307
A new approach to AFM investigation of buried Al/InxGa1-xAs/GaAs interfaces and quantum dots
Authors: Danil'tsev, VM Drozdov, MN Drozdov, YN Khrykin, OI Shashkin, VI Shuleshova, IY Vostokov, NV
Citation: Vm. Danil'Tsev et al., A new approach to AFM investigation of buried Al/InxGa1-xAs/GaAs interfaces and quantum dots, PHYS LOW-D, 3-4, 2001, pp. 321-326
Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates
Authors: Buzynin, YN Gusev, SA Danil'tsev, VM Drozdov, MN Drozdov, YN Murel', AV Khrykin, OI Shashkin, VI
Citation: Yn. Buzynin et al., Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates, TECH PHYS L, 26(4), 2000, pp. 298-301
Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures
Authors: Minkov, GM Germanenko, AV Rut, OE Khrykin, OI Shashkin, VI Danil'tsev, VM
Citation: Gm. Minkov et al., Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures, NANOTECHNOL, 11(4), 2000, pp. 406-410
Compositional and optical properties GaNxAs1-x layers grown by MOCVD
Authors: Gaponova, DM Danil'tsev, VM Drozdov, MN Drozdov, YN Krasil'nikov, ZF Revin, DG Tolstoguzov, AB Khrykin, OI Shashkin, VI
Citation: Dm. Gaponova et al., Compositional and optical properties GaNxAs1-x layers grown by MOCVD, IAN FIZ, 64(2), 2000, pp. 358-361
Surface photoabsorption monitoring of the InGaAs grown by MOCVD
Authors: Vostokov, NV Danil'tsev, VM Drosdov, MN Drozdov, YN Luk'yanov, AY Revin, DG Khrykin, OI Shashkin, VI
Citation: Nv. Vostokov et al., Surface photoabsorption monitoring of the InGaAs grown by MOCVD, IAN FIZ, 64(2), 2000, pp. 370-373
Low-field negative magnetoresistance in double-layer structures
Authors: Minkov, GM Germanenko, AV Rut, OE Khrykin, OI Shashkin, VI Danil'tsev, VM
Citation: Gm. Minkov et al., Low-field negative magnetoresistance in double-layer structures, PHYS REV B, 62(24), 2000, pp. 17089-17093
Analysis of negative magnetoresistance: Statistics of closed paths. II. Experiment
Authors: Minkov, GM Negashev, SA Rut, OE Germanenko, AV Khrykin, OI Shashkin, VI Danil'tsev, VM
Citation: Gm. Minkov et al., Analysis of negative magnetoresistance: Statistics of closed paths. II. Experiment, PHYS REV B, 61(19), 2000, pp. 13172-13176
New approach to the analysis of negative magnetostriction in two-dimensional structures
Authors: Min'kov, GM Negashev, SA Rut, OE Germanenko, AV Khrykin, OI Shashkin, VI Danil'tsev, VM
Citation: Gm. Min'Kov et al., New approach to the analysis of negative magnetostriction in two-dimensional structures, SEMICONDUCT, 33(8), 1999, pp. 898-900
Risultati: 1-11 |