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Results:
1-19
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Results: 19
Authors:
Kojima, A
Koshida, N
Citation: A. Kojima et N. Koshida, Evidence of enlarged drift length in nanocrystalline porous silicon layersby time-of-flight measurements, JPN J A P 1, 40(4B), 2001, pp. 2779-2781
Authors:
Sheng, X
Kojima, A
Komoda, T
Koshida, N
Citation: X. Sheng et al., Efficient and ballistic cold electron emission from porous polycrystallinesilicon diodes with a porosity multilayer structure, J VAC SCI B, 19(1), 2001, pp. 64-67
Authors:
Kumagai, A
Kanegawa, Y
Suda, Y
Koshida, N
Citation: A. Kumagai et al., Improvement of porous Si luminescence intensity durability by nitrogen ionirradiation using an ECR ion source, J POROUS MA, 7(1-3), 2000, pp. 73-76
Authors:
Gelloz, B
Bsiesy, A
Koshida, N
Citation: B. Gelloz et al., Conduction and luminescent properties of wet porous silicon, J POROUS MA, 7(1-3), 2000, pp. 103-106
Authors:
Takahashi, M
Toriumi, Y
Koshida, N
Citation: M. Takahashi et al., Current-induced optical effect in porous silicon Fabry-Perot resonators, PHYS ST S-A, 182(1), 2000, pp. 567-571
Authors:
Ueno, K
Koshida, N
Citation: K. Ueno et N. Koshida, Optical accessibility of light-emissive nanosilicon memory, PHYS ST S-A, 182(1), 2000, pp. 579-583
Authors:
Gelloz, B
Koshida, N
Citation: B. Gelloz et N. Koshida, Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode, J APPL PHYS, 88(7), 2000, pp. 4319-4324
Authors:
Takahashi, M
Toriumi, Y
Matsumoto, T
Masumoto, Y
Koshida, N
Citation: M. Takahashi et al., Significant photoinduced refractive index change observed in porous silicon Fabry-Perot resonators, APPL PHYS L, 76(15), 2000, pp. 1990-1992
Authors:
Matsumoto, T
Mimura, H
Koshida, N
Masumoto, Y
Citation: T. Matsumoto et al., Deep-level energy states in nanostructural porous silicon, JPN J A P 1, 38(1B), 1999, pp. 539-541
Authors:
Koshida, N
Gelloz, B
Citation: N. Koshida et B. Gelloz, Wet and dry porous silicon, CURR OP COL, 4(4), 1999, pp. 309-313
Authors:
Komoda, T
Sheng, X
Koshida, N
Citation: T. Komoda et al., Mechanism of efficient and stable surface-emitting cold cathode based on porous polycrystalline silicon films, J VAC SCI B, 17(3), 1999, pp. 1076-1079
Authors:
Koshida, N
Sheng, X
Komoda, T
Citation: N. Koshida et al., Quasiballistic electron emission from porous silicon diodes, APPL SURF S, 146(1-4), 1999, pp. 371-376
Authors:
Matsumoto, T
Mimura, H
Koshida, N
Masumoto, Y
Citation: T. Matsumoto et al., Deep level energy states in porous silicon and porous silicon carbide determined by space-charge-limited current measurements, APPL SURF S, 142(1-4), 1999, pp. 569-573
Authors:
Shinoda, H
Nakajima, T
Ueno, K
Koshida, N
Citation: H. Shinoda et al., Thermally induced ultrasonic: emission from porous silicon, NATURE, 400(6747), 1999, pp. 853-855
Authors:
Takahashi, M
Koshida, N
Citation: M. Takahashi et N. Koshida, Fabrication and characteristics of three-dimensionally buried porous silicon optical waveguides, J APPL PHYS, 86(9), 1999, pp. 5274-5278
Authors:
Ueno, K
Koshida, N
Citation: K. Ueno et N. Koshida, Light-emissive nonvolatile memory effects in porous silicon diodes, APPL PHYS L, 74(1), 1999, pp. 93-95
Authors:
Nakagawa, T
Sugiyama, H
Koshida, N
Citation: T. Nakagawa et al., Fabrication of periodic Si nanostructure by controlled anodization, JPN J A P 1, 37(12B), 1998, pp. 7186-7189
Authors:
Koshida, N
Ueno, K
Sheng, X
Citation: N. Koshida et al., Field-induced functions of porous Si as a confined system, J LUMINESC, 80(1-4), 1998, pp. 37-42
Authors:
Matsumoto, T
Qi, JF
Masumoto, Y
Mimura, H
Koshida, N
Citation: T. Matsumoto et al., Determination of localized states in porous silicon, J LUMINESC, 80(1-4), 1998, pp. 203-206
Risultati:
1-19
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