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Results:
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Results: 15
Authors:
Bauer, A
Reischauer, P
Krausslich, J
Schell, N
Matz, W
Goetz, K
Citation: A. Bauer et al., Structure refinement of the silicon carbide polytypes 4H and 6H: unambiguous determination of the refinement parameters, ACT CRYST A, 57, 2001, pp. 60-67
Authors:
Lebedev, V
Jinschek, J
Krausslich, J
Kaiser, U
Schroter, B
Richter, W
Citation: V. Lebedev et al., Hexagonal AlN films grown on nominal and off-axis Si(001) substrates, J CRYST GR, 230(3-4), 2001, pp. 426-431
Authors:
Langer, J
Mattheis, R
Ocker, B
Maass, W
Senz, S
Hesse, D
Krausslich, J
Citation: J. Langer et al., Microstructure and magnetic properties of sputtered spin valve systems, J APPL PHYS, 90(10), 2001, pp. 5126-5134
Authors:
Hess, G
Bauer, A
Krausslich, J
Fissel, A
Schroter, B
Richter, W
Schell, N
Matz, W
Goetz, K
Citation: G. Hess et al., Si/Ge-nanocrystals on SiC(0001), THIN SOL FI, 380(1-2), 2000, pp. 86-88
Authors:
Fissel, A
Kaiser, U
Schroter, B
Krausslich, J
Richter, W
Citation: A. Fissel et al., MBE-growth of heteropolytypic low-dimensional structures of SiC, THIN SOL FI, 380(1-2), 2000, pp. 89-91
Authors:
Lebedev, V
Jinschek, J
Kaiser, U
Schroter, B
Richter, W
Krausslich, J
Citation: V. Lebedev et al., Epitaxial relationship in the AlN/Si(001) heterosystem, APPL PHYS L, 76(15), 2000, pp. 2029-2031
Authors:
Kipshidze, DG
Schenk, HP
Fissel, A
Kaiser, U
Schulze, J
Richter, W
Weihnacht, M
Kunze, R
Krausslich, J
Citation: Dg. Kipshidze et al., Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices, SEMICONDUCT, 33(11), 1999, pp. 1241-1246
Authors:
Fissel, A
Kaiser, U
Krausslich, J
Pfennighaus, K
Schroter, B
Schulz, J
Richter, W
Citation: A. Fissel et al., Epitaxial growth of SiC-heterostructures on alpha-SiC(0001) by solid-source MBE, MAT SCI E B, 61-2, 1999, pp. 139-142
Authors:
Bauer, A
Krausslich, J
Kocher, B
Goetz, K
Fissel, A
Richter, W
Citation: A. Bauer et al., X-ray investigations of MBE-grown heteroepitaxial SiC layers on 6H-SiC substrates, MAT SCI E B, 61-2, 1999, pp. 179-182
Authors:
Bauer, A
Krausslich, J
Kuschnerus, P
Goetz, K
Kackell, P
Bechstedt, F
Citation: A. Bauer et al., High-precision determination of atomic positions in 4H- and 6H-SiC crystals, MAT SCI E B, 61-2, 1999, pp. 217-220
Authors:
Schenk, HPD
Kaiser, U
Kipshidze, GD
Fissel, A
Krausslich, J
Hobert, H
Schulze, J
Richter, W
Citation: Hpd. Schenk et al., Growth of atomically smooth AlN films with a 5 : 4 coincidence interface on Si(111) by MBE, MAT SCI E B, 59(1-3), 1999, pp. 84-87
Authors:
Schmidt, F
Boschetto, D
Linzen, S
Krausslich, J
Matthes, A
Schmidl, F
Seidel, P
Citation: F. Schmidt et al., Combined sputter and pulsed laser deposition for preparation of thin YBa2Cu3O7-delta films on buffered silicon substrates, PHYSICA C, 327, 1999, pp. 99-103
Authors:
Langer, J
Krausslich, J
Mattheis, R
Senz, S
Hesse, D
Citation: J. Langer et al., Characterisation of interfacial properties in sputtered Co Cu multilayers:X-ray reflectometry compared with TEM and AFM, J MAGN MAGN, 199, 1999, pp. 644-646
Authors:
Schenk, HPD
Kipshidze, GD
Lebedev, VB
Shokhovets, S
Goldhahn, R
Krausslich, J
Fissel, A
Richter, W
Citation: Hpd. Schenk et al., Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 359-364
Authors:
Schenk, HPD
Kipshidze, GD
Kaiser, U
Fissel, A
Krausslich, J
Schulze, J
Richter, W
Citation: Hpd. Schenk et al., Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy, J CRYST GR, 200(1-2), 1999, pp. 45-54
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