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Results: 1-25 | 26-31
Results: 1-25/31
New technique for sublimation growth of AlN single crystals
Authors: Shi, Y Liu, B Liu, LH Edgar, JH Payzant, EA Hayes, JM Kuball, M
Citation: Y. Shi et al., New technique for sublimation growth of AlN single crystals, MRS I J N S, 6(5), 2001, pp. 1-10
Angular dispersion of polar phonons in a hexagonal GaN-AlN superlattice
Authors: Gleize, J Frandon, J Demangeot, F Renucci, MA Kuball, M Hayes, JM Widmann, F Daudin, B
Citation: J. Gleize et al., Angular dispersion of polar phonons in a hexagonal GaN-AlN superlattice, MAT SCI E B, 82(1-3), 2001, pp. 27-29
On phonon confinement effects and free carrier concentration in GaN quantum dots
Authors: Kuball, M Gleize, J Tanaka, S Aoyagi, Y
Citation: M. Kuball et al., On phonon confinement effects and free carrier concentration in GaN quantum dots, PHYS ST S-B, 228(1), 2001, pp. 195-198
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
Authors: Kuball, M
Citation: M. Kuball, Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control, SURF INT AN, 31(10), 2001, pp. 987-999
Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures
Authors: Gleize, J Demangeot, F Frandon, J Renucci, MA Kuball, M Daudin, B Grandjean, N
Citation: J. Gleize et al., Inelastic light scattering by phonons in hexagonal GaN-AlN nanostructures, PHYS ST S-A, 183(1), 2001, pp. 157-161
Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AIN grown by the sublimation sandwich technique
Authors: Shi, Y Xie, ZY Liu, LH Liu, B Edgar, JH Kuball, M
Citation: Y. Shi et al., Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AIN grown by the sublimation sandwich technique, J CRYST GR, 233(1-2), 2001, pp. 177-186
Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes
Authors: Kuball, M Hayes, JM Shi, Y Edgar, JH Prins, AD van Uden, NWA Dunstan, DJ
Citation: M. Kuball et al., Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes, J CRYST GR, 231(3), 2001, pp. 391-396
Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary
Authors: Kuball, M Benyoucef, M Beaumont, B Gibart, P
Citation: M. Kuball et al., Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary, J APPL PHYS, 90(7), 2001, pp. 3656-3658
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
Authors: Bell, A Harrison, I Korakakis, D Larkins, EC Hayes, JM Kuball, M Grandjean, N Massies, J
Citation: A. Bell et al., Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN, J APPL PHYS, 89(2), 2001, pp. 1070-1074
Raman scattering and photoluminescence studies on Si/SiO2 superlattices
Authors: Benyoucef, M Kuball, M Sun, JM Zhong, GZ Fan, XW
Citation: M. Benyoucef et al., Raman scattering and photoluminescence studies on Si/SiO2 superlattices, J APPL PHYS, 89(12), 2001, pp. 7903-7907
Direct signature of strained GaN quantum dots by Raman scattering
Authors: Gleize, J Demangeot, F Frandon, J Renucci, MA Kuball, M Damilano, B Grandjean, N Massies, J
Citation: J. Gleize et al., Direct signature of strained GaN quantum dots by Raman scattering, APPL PHYS L, 79(5), 2001, pp. 686-688
Resonant Raman scattering on self-assembled GaN quantum dots
Authors: Kuball, M Gleize, J Tanaka, S Aoyagi, Y
Citation: M. Kuball et al., Resonant Raman scattering on self-assembled GaN quantum dots, APPL PHYS L, 78(7), 2001, pp. 987-989
Raman scattering studies on single-crystalline bulk AlN under high pressures
Authors: Kuball, M Hayes, JM Prins, AD van Uden, NWA Dunstan, DJ Shi, Y Edgar, JH
Citation: M. Kuball et al., Raman scattering studies on single-crystalline bulk AlN under high pressures, APPL PHYS L, 78(6), 2001, pp. 724-726
Amorphous GaN grown by room temperature molecular beam epitaxy
Authors: Kuball, M Mokhtari, H Cherns, D Lu, J Westwood, DI
Citation: M. Kuball et al., Amorphous GaN grown by room temperature molecular beam epitaxy, JPN J A P 1, 39(8), 2000, pp. 4753-4754
Temperature dependence of the phonons of bulk AlN
Authors: Hayes, JM Kuball, M Shi, Y Edgar, JH
Citation: Jm. Hayes et al., Temperature dependence of the phonons of bulk AlN, JPN J A P 2, 39(7B), 2000, pp. L710-L712
The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films
Authors: Kuball, M Hayes, JM Suski, T Jun, J Tan, HH Williams, JS Jagadish, C
Citation: M. Kuball et al., The use of micro-Raman spectroscopy to monitor high-pressure high-temperature annealing of ion-implanted GaN films, MRS I J N S, 5, 2000, pp. NIL_635-NIL_640
A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy.
Authors: Bell, A Harrison, I Korakakis, D Larkins, EC Hayes, JM Kuball, M
Citation: A. Bell et al., A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy., MRS I J N S, 5, 2000, pp. NIL_655-NIL_660
Focused ion beam etching of nanometer-size GaN/AlGaN device structures andtheir optical characterization by micro-photoluminescence/Raman mapping
Authors: Kuball, M Benyoucef, M Morrissey, FH Foxon, CT
Citation: M. Kuball et al., Focused ion beam etching of nanometer-size GaN/AlGaN device structures andtheir optical characterization by micro-photoluminescence/Raman mapping, MRS I J N S, 5, 2000, pp. NIL_816-NIL_821
Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures
Authors: Gleize, J Demangeot, F Frandon, J Renucci, MA Kuball, M Grandjean, N Massies, J
Citation: J. Gleize et al., Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures, THIN SOL FI, 364(1-2), 2000, pp. 156-160
High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering
Authors: Kuball, M Hayes, JM Suski, T Jun, J Leszczynski, M Domagala, J Tan, HH Williams, JS Jagadish, C
Citation: M. Kuball et al., High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering, J APPL PHYS, 87(6), 2000, pp. 2736-2741
Phonon lifetimes in bulk AlN and their temperature dependence
Authors: Kuball, M Hayes, JM Shi, Y Edgar, JH
Citation: M. Kuball et al., Phonon lifetimes in bulk AlN and their temperature dependence, APPL PHYS L, 77(13), 2000, pp. 1958-1960
Investigation of polarization-pinning mechanism in deep-line-etched vertical-cavity surface-emitting lasers
Authors: Sargent, LJ Rorison, JM Kuball, M Penty, RV White, IH Corzine, SW Tan, MRT Wang, SY Heard, PJ
Citation: Lj. Sargent et al., Investigation of polarization-pinning mechanism in deep-line-etched vertical-cavity surface-emitting lasers, APPL PHYS L, 76(4), 2000, pp. 400-402
Raman scattering in GaN/AlN quantum dot structures
Authors: Gleize, J Demangeot, F Frandon, J Renucci, MA Kuball, M Widmann, F Daudin, B
Citation: J. Gleize et al., Raman scattering in GaN/AlN quantum dot structures, PHYS ST S-B, 216(1), 1999, pp. 457-460
Multi phonon resonant Raman scattering in GaN/AlxGa1-xN quantum wells
Authors: Demangeot, F Gleize, J Frandon, J Renucci, MA Kuball, M Grandjean, N Massies, J
Citation: F. Demangeot et al., Multi phonon resonant Raman scattering in GaN/AlxGa1-xN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 799-802
Deep ultraviolet Raman scattering for the monitoring of high-temperature processing of AlGaN
Authors: Kuball, M Demangeot, F Frandon, J Renucci, MA Batchelder, DN Briot, O
Citation: M. Kuball et al., Deep ultraviolet Raman scattering for the monitoring of high-temperature processing of AlGaN, PHYS ST S-B, 215(1), 1999, pp. 105-108
Risultati: 1-25 | 26-31