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Results: 1-25 | 26-47 |
Results: 26-47/47
Gallium nitride growth using diethyl gallium chloride as an alternative gallium source
Authors: Zhang, L Gu, SL Kuech, TF Boleslawski, MP
Citation: L. Zhang et al., Gallium nitride growth using diethyl gallium chloride as an alternative gallium source, J CRYST GR, 213(1-2), 2000, pp. 1-9
Surface chemistry of prototypical bulk II-VI and III-V semiconductors and implications for chemical sensing
Authors: Seker, F Meeker, K Kuech, TF Ellis, AB
Citation: F. Seker et al., Surface chemistry of prototypical bulk II-VI and III-V semiconductors and implications for chemical sensing, CHEM REV, 100(7), 2000, pp. 2505-2536
Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition
Authors: Yi, SS Hansen, DM Inoki, CK Harris, DL Kuan, TS Kuech, TF
Citation: Ss. Yi et al., Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition, APPL PHYS L, 77(6), 2000, pp. 842-844
Demonstration of near-field scanning photoreflectance spectroscopy
Authors: Paulson, C Ellis, AB McCaughan, L Hawkins, B Sun, JX Kuech, TF
Citation: C. Paulson et al., Demonstration of near-field scanning photoreflectance spectroscopy, APPL PHYS L, 77(13), 2000, pp. 1943-1945
Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells
Authors: Herndon, MK Bradford, WC Collins, RT Hawkins, BE Kuech, TF Friedman, DJ Kurtz, SR
Citation: Mk. Herndon et al., Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells, APPL PHYS L, 77(1), 2000, pp. 100-102
p-GaN surface treatments for metal contacts
Authors: Sun, JX Rickert, KA Redwing, JM Ellis, AB Himpsel, FJ Kuech, TF
Citation: Jx. Sun et al., p-GaN surface treatments for metal contacts, APPL PHYS L, 76(4), 2000, pp. 415-417
Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN
Authors: Gu, SL Zhang, R Sun, JX Zhang, L Kuech, TF
Citation: Sl. Gu et al., Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN, APPL PHYS L, 76(23), 2000, pp. 3454-3456
Experimental test for elastic compliance during growth on glass-bonded compliant substrates
Authors: Moran, PD Hansen, DM Matyi, RJ Mawst, LJ Kuech, TF
Citation: Pd. Moran et al., Experimental test for elastic compliance during growth on glass-bonded compliant substrates, APPL PHYS L, 76(18), 2000, pp. 2541-2543
Growth of oriented lithium niobate on silicon by alternating gas flow chemical beam epitaxy with metalorganic precursors
Authors: Joshkin, VA Moran, P Saulys, D Kuech, TF McCaughan, L Oktyabrsky, SR
Citation: Va. Joshkin et al., Growth of oriented lithium niobate on silicon by alternating gas flow chemical beam epitaxy with metalorganic precursors, APPL PHYS L, 76(15), 2000, pp. 2125-2127
Impurity incorporation and the surface morphology of MOVPE grown GaAs
Authors: Li, J Kuech, TF
Citation: J. Li et Tf. Kuech, Impurity incorporation and the surface morphology of MOVPE grown GaAs, J ELEC MAT, 28(2), 1999, pp. 124-133
Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride
Authors: Sun, JX Redwing, JM Kuech, TF
Citation: Jx. Sun et al., Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride, PHYS ST S-A, 176(1), 1999, pp. 693-698
Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium
Authors: Cederberg, JG Culp, TD Bieg, B Pfeiffer, D Winter, CH Bray, KL Kuech, TF
Citation: Jg. Cederberg et al., Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium, J APPL PHYS, 85(3), 1999, pp. 1825-1831
Chemical bonding and electronic properties of SeS2-treated GaAs(100)
Authors: Sun, JX Seo, DJ O'Brien, WL Himpsel, FJ Ellis, AB Kuech, TF
Citation: Jx. Sun et al., Chemical bonding and electronic properties of SeS2-treated GaAs(100), J APPL PHYS, 85(2), 1999, pp. 969-977
Synthesis, structure, and molecular orbital studies of yttrium, erbium, and lutetium complexes bearing eta(2)-pyrazolato ligands: Development of a new class of precursors for doping semiconductors
Authors: Pfeiffer, D Ximba, BJ Liable-Sands, LM Rheingold, AL Heeg, MJ Coleman, DM Sehlegel, HB Kuech, TF Winter, CH
Citation: D. Pfeiffer et al., Synthesis, structure, and molecular orbital studies of yttrium, erbium, and lutetium complexes bearing eta(2)-pyrazolato ligands: Development of a new class of precursors for doping semiconductors, INORG CHEM, 38(20), 1999, pp. 4539-4548
Realization and characterization of ultrathin GaAs-on-insulator structures
Authors: Moran, PD Hansen, DM Matyi, RJ Redwing, JM Kuech, TF
Citation: Pd. Moran et al., Realization and characterization of ultrathin GaAs-on-insulator structures, J ELCHEM SO, 146(9), 1999, pp. 3506-3509
InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality
Authors: Moran, PD Hansen, DM Matyi, RJ Cederberg, JG Mawst, LJ Kuech, TF
Citation: Pd. Moran et al., InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality, APPL PHYS L, 75(11), 1999, pp. 1559-1561
Nitride based high power devices: Design and fabrication issues
Authors: Bandic, ZZ Piquette, EC Bridger, PM Beach, RA Kuech, TF McGill, TC
Citation: Zz. Bandic et al., Nitride based high power devices: Design and fabrication issues, SOL ST ELEC, 42(12), 1998, pp. 2289-2294
Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy
Authors: Cederberg, JG Bieg, B Huang, JW Stockman, SA Peanasky, MJ Kuech, TF
Citation: Jg. Cederberg et al., Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 63-68
Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium
Authors: Cederberg, JG Culp, TD Bieg, B Pfeiffer, D Winter, CH Bray, KL Kuech, TF
Citation: Jg. Cederberg et al., Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium, J CRYST GR, 195(1-4), 1998, pp. 105-111
Development of a glass-bonded compliant substrate
Authors: Hansen, DM Moran, PD Dunn, KA Babcock, SE Matyi, RJ Kuech, TF
Citation: Dm. Hansen et al., Development of a glass-bonded compliant substrate, J CRYST GR, 195(1-4), 1998, pp. 144-150
Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes
Authors: Li, J Mirabedini, A Mawst, LJ Savage, DE Matyi, RJ Kuech, TF
Citation: J. Li et al., Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes, J CRYST GR, 195(1-4), 1998, pp. 617-623
In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy
Authors: Sun, JX Zhang, L Kuech, TF
Citation: Jx. Sun et al., In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 711-717
Risultati: 1-25 | 26-47 |