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Results: 1-25 | 26-33
Results: 1-25/33
Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells
Authors: Kaplar, RJ Kwon, D Ringel, SA Allerman, AA Kurtz, SR Jones, ED Sieg, RM
Citation: Rj. Kaplar et al., Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III-V solar cells, SOL EN MAT, 69(1), 2001, pp. 85-91
Band anticrossing in III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Xin, HP Tu, CW
Citation: W. Shan et al., Band anticrossing in III-N-V alloys, PHYS ST S-B, 223(1), 2001, pp. 75-85
The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition
Authors: Biefeld, RM Cederberg, JG Peake, GM Kurtz, SR
Citation: Rm. Biefeld et al., The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition, J CRYST GR, 225(2-4), 2001, pp. 384-390
Deep levels and their impact on generation current in Sn-doped InGaAsN
Authors: Kaplar, RJ Arehart, AR Ringel, SA Allerman, AA Sieg, RM Kurtz, SR
Citation: Rj. Kaplar et al., Deep levels and their impact on generation current in Sn-doped InGaAsN, J APPL PHYS, 90(7), 2001, pp. 3405-3408
GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates
Authors: Klem, JF Blum, O Kurtz, SR Fritz, J Choquette, KD
Citation: Jf. Klem et al., GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates, J VAC SCI B, 18(3), 2000, pp. 1605-1608
Outdoor rating conditions for photovoltaic modules and systems
Authors: Kurtz, SR Myers, D Townsend, T Whitaker, C Maish, A Hulstrom, R Emery, K
Citation: Sr. Kurtz et al., Outdoor rating conditions for photovoltaic modules and systems, SOL EN MAT, 62(4), 2000, pp. 379-391
Exploring new active regions for type IInAsSb strained-layer lasers
Authors: Biefeld, RM Phillips, JD Kurtz, SR
Citation: Rm. Biefeld et al., Exploring new active regions for type IInAsSb strained-layer lasers, J ELEC MAT, 29(1), 2000, pp. 91-93
Effect of nitrogen on the electronic band structure of group III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Nauka, C
Citation: W. Shan et al., Effect of nitrogen on the electronic band structure of group III-N-V alloys, PHYS REV B, 62(7), 2000, pp. 4211-4214
Photoluminescence-linewidth-derived reduced exciton mass for InyGa1-yAs1-xNx alloys
Authors: Jones, ED Allerman, AA Kurtz, SR Modine, NA Bajaj, KK Tozer, SW Wei, X
Citation: Ed. Jones et al., Photoluminescence-linewidth-derived reduced exciton mass for InyGa1-yAs1-xNx alloys, PHYS REV B, 62(11), 2000, pp. 7144-7149
Use of a high-sensitivity rapid strep test without culture confirmation ofnegative results: 2 years' experience. (vol 49, pg 34, 2000)
Authors: Webb, KH Needham, CA Kurtz, SR
Citation: Kh. Webb et al., Use of a high-sensitivity rapid strep test without culture confirmation ofnegative results: 2 years' experience. (vol 49, pg 34, 2000), J FAM PRACT, 49(4), 2000, pp. 378-378
Use of a high-sensitivity rapid strep test without culture confirmation ofnegative results - 2 years' experience
Authors: Webb, KH Needham, CA Kurtz, SR
Citation: Kh. Webb et al., Use of a high-sensitivity rapid strep test without culture confirmation ofnegative results - 2 years' experience, J FAM PRACT, 49(1), 2000, pp. 34-38
InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition
Authors: Biefeld, RM Phillips, JD Kurtz, SR
Citation: Rm. Biefeld et al., InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition, J CRYST GR, 211(1-4), 2000, pp. 400-404
Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells
Authors: Friedman, DJ Norman, AG Geisz, JF Kurtz, SR
Citation: Dj. Friedman et al., Comparison of hydrazine, dimethylhydrazine, and t-butylamine nitrogen sources for MOVPE growth of GaInNAs for solar cells, J CRYST GR, 208(1-4), 2000, pp. 11-17
Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 mu m
Authors: Choquette, KD Klem, JF Fischer, AJ Blum, O Allerman, AA Fritz, IJ Kurtz, SR Breiland, WG Sieg, R Geib, KM Scott, JW Naone, RL
Citation: Kd. Choquette et al., Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 mu m, ELECTR LETT, 36(16), 2000, pp. 1388-1390
Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
Authors: Kurtz, SR Allerman, AA Seager, CH Sieg, RM Jones, ED
Citation: Sr. Kurtz et al., Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen, APPL PHYS L, 77(3), 2000, pp. 400-402
Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells
Authors: Herndon, MK Bradford, WC Collins, RT Hawkins, BE Kuech, TF Friedman, DJ Kurtz, SR
Citation: Mk. Herndon et al., Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells, APPL PHYS L, 77(1), 2000, pp. 100-102
Time-resolved photoluminescence studies of InxGa1-xAs1-yNy
Authors: Mair, RA Lin, JY Jiang, HX Jones, ED Allerman, AA Kurtz, SR
Citation: Ra. Mair et al., Time-resolved photoluminescence studies of InxGa1-xAs1-yNy, APPL PHYS L, 76(2), 2000, pp. 188-190
BGaInAs alloys lattice matched to GaAs
Authors: Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Reedy, RC Swartzlander, AB Keyes, BM Norman, AG
Citation: Jf. Geisz et al., BGaInAs alloys lattice matched to GaAs, APPL PHYS L, 76(11), 2000, pp. 1443-1445
Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Suski, T Walukiewicz, W Shan, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: C. Skierbiszewski et al., Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys, PHYS ST S-B, 216(1), 1999, pp. 135-139
Band structure of InxGa1-xAs1-yNy alloys and effects of pressure
Authors: Jones, ED Modine, NA Allerman, AA Kurtz, SR Wright, AF Tozer, ST Wei, X
Citation: Ed. Jones et al., Band structure of InxGa1-xAs1-yNy alloys and effects of pressure, PHYS REV B, 60(7), 1999, pp. 4430-4433
Local structures and interface morphology of InxGa1-xAs1-yNy thin films grown on GaAs
Authors: Soo, YL Huang, S Kao, YH Chen, JG Hulbert, SL Geisz, JF Kurtz, S Olson, JM Kurtz, SR Jones, ED Allerman, AA
Citation: Yl. Soo et al., Local structures and interface morphology of InxGa1-xAs1-yNy thin films grown on GaAs, PHYS REV B, 60(19), 1999, pp. 13605-13611
Band anticrossing in GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Band anticrossing in GaInNAs alloys, PHYS REV L, 82(6), 1999, pp. 1221-1224
Nitrogen-activated transitions, level repulsion, and band gap reduction inGaAs1-xNx with x < 0.03
Authors: Perkins, JD Mascarenhas, A Zhang, Y Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: Jd. Perkins et al., Nitrogen-activated transitions, level repulsion, and band gap reduction inGaAs1-xNx with x < 0.03, PHYS REV L, 82(16), 1999, pp. 3312-3315
AlInP benchmarks for growth of AlGaInP compounds by organometallic vapor-phase epitaxy
Authors: Bertness, KA Kurtz, SR Asher, SE Reedy, RC
Citation: Ka. Bertness et al., AlInP benchmarks for growth of AlGaInP compounds by organometallic vapor-phase epitaxy, J CRYST GR, 196(1), 1999, pp. 13-22
Effect of nitrogen on the band structure of GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Effect of nitrogen on the band structure of GaInNAs alloys, J APPL PHYS, 86(4), 1999, pp. 2349-2351
Risultati: 1-25 | 26-33