AAAAAA
Results:
1-20
|
Results: 20
Authors:
LAKNER H
LIU Q
BROCKT G
RADEFELD A
MEINERT A
SCHOLZ F
Citation: H. Lakner et al., INVESTIGATION OF INHOMOGENEITIES IN (AL, GA, IN)N HETEROSTRUCTURES BYSTEM AND CATHODOLUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 44-52
Authors:
XU J
LIU Q
KALISCH H
WOITOK J
HEUKEN M
LAKNER H
Citation: J. Xu et al., STUDY OF STRUCTURAL-PROPERTIES OF MOVPE GROWN ZNMGSSE LAYER BY HRXRD AND CATHODOLUMINESCENCE, Thin solid films, 319(1-2), 1998, pp. 57-61
Authors:
LIU Q
LAKNER H
MENDORF C
TAUDT W
HEUKEN M
HEIME K
KUBALEK E
Citation: Q. Liu et al., THE INFLUENCE OF STRUCTURAL DEFECTS IN ZNSE GAAS HETEROSTRUCTURES ON LUMINESCENCE PROPERTIES/, Journal of physics. D, Applied physics (Print), 31(19), 1998, pp. 2421-2425
Authors:
TAUDT W
XU J
HARDT A
KORFER H
LIU Q
HAMADEH H
LAKNER H
WOITOK J
HEUKEN M
Citation: W. Taudt et al., OPTIMIZATION OF PRE-EPITAXIAL PROCESSES TO OBTAIN HIGH-QUALITY ZNSE GAAS HETEROINTERFACES GROWN IN A LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM/, Journal of crystal growth, 191(4), 1998, pp. 663-672
Authors:
LIU Q
BROCKT G
MEINERT A
KALISCH H
HEUKEN M
LAKNER H
Citation: Q. Liu et al., STUDIES ON STRUCTURAL AND ELECTROOPTICAL PROPERTIES OF MOVPE-GROWN ZNMGSSE BY CATHODOLUMINESCENCE, Journal of crystal growth, 185, 1998, pp. 139-143
Authors:
SCHOLZ F
SOHMER A
OFF J
SYGANOW V
DORNEN A
IM JS
HANGLEITER A
LAKNER H
Citation: F. Scholz et al., IN INCORPORATION EFFICIENCY AND COMPOSITION FLUCTUATIONS IN MOVPE GROWN GAINN GAN HETERO STRUCTURES AND QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 238-244
Authors:
LIU Q
LAKNER H
MEINERT A
SCHOLZ F
SOHMER A
KUBALEK E
Citation: Q. Liu et al., CATHODOLUMINESCENCE STUDY OF CRYSTALLINE QUALITY OF (AL, IN, GA)N HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 245-250
Authors:
LAKNER H
MENDORF C
BOLLIG B
PROST W
TEGUDE FJ
Citation: H. Lakner et al., DETERMINATION OF INTERFACE COMPOSITION IN III-V HETEROJUNCTION DEVICES (HT AND RTD) WITH ATOMIC-RESOLUTION USING STEM TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 52-56
Authors:
LAKNER H
BROCKT G
MENDORF C
RADEFELD A
SCHOLZ F
HARLE V
OFF J
SOHMER A
Citation: H. Lakner et al., CHARACTERIZATION OF MOVPE-GROWN (AL,IN,GA)N HETEROSTRUCTURES BY QUANTITATIVE ANALYTICAL ELECTRON-MICROSCOPY, Journal of electronic materials, 26(10), 1997, pp. 1103-1108
Authors:
HEUKEN M
EICHELSTREIBER CV
BEHRES A
SCHINELLER B
HEIME K
MENDORF C
BROCKT G
LAKNER H
Citation: M. Heuken et al., MOVPE GROWTH OF INPSB INAS HETEROSTRUCTURES FOR MIDINFRARED EMITTERS/, Journal of electronic materials, 26(10), 1997, pp. 1221-1224
Authors:
LAKNER H
Citation: H. Lakner, ELECTRON-ENERGY-LOSS SPECTROSCOPY OF SEMI CONDUCTOR HETEROFILMS IN-FIELD EMISSION SCANNING-TRANSMISSION ELECTRON-MICROSCOPY, European journal of cell biology, 74, 1997, pp. 27-27
Authors:
SCHULZEKRAASCH F
LAKNER H
Citation: F. Schulzekraasch et H. Lakner, CONVERGENT-BEAM ELECTRON-DIFFRACTION IN S CANNING-TRANSMISSION ELECTRON-MICROSCOPY OF INGAASP, European journal of cell biology, 74, 1997, pp. 49-49
Authors:
RADEFELD A
LAKNER H
Citation: A. Radefeld et H. Lakner, STUDY ON INTERNAL INTERFACES OF SEMICONDU CTOR HETEROSTRUCTURES BY CONVERGENT-BEAM ELECTRON-DIFFRACTION - EXPERIMENT AND SIMULATION, European journal of cell biology, 74, 1997, pp. 60-60
Authors:
LAKNER H
UNGERECHTS S
BEHRES A
KOHL A
OPITZ B
HEIME K
WOITOK J
Citation: H. Lakner et al., CHARACTERIZATION OF MOVPE GROWN INGAASP SUPERLATTICES FOR MODULATORS BY ELECTRON-DIFFRACTION, X-RAY-DIFFRACTION AND Z-CONTRAST IMAGING, Journal of crystal growth, 170(1-4), 1997, pp. 732-737
Authors:
LAKNER H
BOLLIG B
UNGERECHTS S
KUBALEK E
Citation: H. Lakner et al., CHARACTERIZATION OF III-V SEMICONDUCTOR INTERFACES BY Z-CONTRAST IMAGING, EELS AND CBED, Journal of physics. D, Applied physics, 29(7), 1996, pp. 1767-1778
Authors:
KAUFFELDT T
LAKNER H
LOHMANN M
SCHMIDTOTT A
Citation: T. Kauffeldt et al., NANOCHARACTERIZATION OF SMALL PARTICLES PRODUCED IN A GAS, Nanostructured materials, 6(1-4), 1995, pp. 365-368
Authors:
PROST W
SCHEFFER F
LIU Q
LINDNER A
LAKNER H
GYURO I
TEGUDE FJ
Citation: W. Prost et al., METALORGANIC VAPOR-PHASE EPITAXIAL GROWN HETEROINTERFACES TO GAINP WITH GROUP-III AND GROUP-V EXCHANGE, Journal of crystal growth, 146(1-4), 1995, pp. 538-543
Authors:
LIU Q
SCHEFFER F
LINDNER A
LAKNER H
PROST W
TEGUDE FJ
Citation: Q. Liu et al., X-RAY CHARACTERIZATION OF VERY THIN GAXIN1-XP (X-APPROXIMATE-TO-0.5) LAYERS GROWN ON INP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 188-192
Authors:
SCHEFFER F
LINDNER A
LIU Q
HEEDT C
REUTER R
PROST W
LAKNER H
TEGUDE FJ
Citation: F. Scheffer et al., HIGHLY STRAINED IN0.5GA0.5P AS WIDE-GAP MATERIAL ON INP SUBSTRATE FORHETEROJUNCTION FIELD-EFFECT TRANSISTOR APPLICATION, Journal of crystal growth, 145(1-4), 1994, pp. 326-331
Authors:
KRAUS J
MESCHEDE H
LIU Q
PROST W
TEGUDE FJ
LAKNER H
KUBALEK E
Citation: J. Kraus et al., INYGA1-YAS GAAS INTERFACE SMOOTHING BY GAAS MONOLAYERS IN HIGHLY STRAINED GRADED SUPERLATTICE CHANNELS LESS-THAN-OR-EQUAL-TO-Y-LESS-THAN-OR-EQUAL-TO-0.4) FOR PSEUDOMORPHIC ALXGA1-XAS/INYGA1-YAS HFET/, Journal of crystal growth, 127(1-4), 1993, pp. 589-591
Risultati:
1-20
|