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Results:
1-16
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Results: 16
Authors:
BURIAN E
POGANY D
LALINSKY T
SELIGER N
GORNIK E
Citation: E. Burian et al., THERMAL SIMULATION AND CHARACTERIZATION OF GAAS MICROMACHINED POWER-SENSOR MICROSYSTEMS, Sensors and actuators. A, Physical, 68(1-3), 1998, pp. 372-377
Authors:
HASCIK S
LALINSKY T
MOZOLOVA Z
KUZMIK J
Citation: S. Hascik et al., PATTERNING OF CANTILEVERS FOR POWER SENSOR MICROSYSTEM, Vacuum, 51(2), 1998, pp. 307-309
Authors:
HOTOVY I
HURAN J
HASCIK S
LALINSKY T
Citation: I. Hotovy et al., REACTIVELY SPUTTERED NBN SCHOTTKY CONTACTS ON GAAS AND THEIR THERMAL-STABILITY, Vacuum, 50(3-4), 1998, pp. 403-406
Authors:
LALINSKY T
BREZA J
VOGRINCIC P
OSVALD J
MOZOLOVA Z
SISOLAK J
Citation: T. Lalinsky et al., IRIDIUM-BASED MULTILAYER CONTACTS TO N-GAAS, Solid-state electronics, 42(2), 1998, pp. 205-210
Authors:
POGANY D
SELIGER N
LALINSKY T
KUZMIK J
HABAS P
HRKUT P
GORNIK E
Citation: D. Pogany et al., STUDY OF THERMAL EFFECTS IN GAAS MICROMACHINED POWER SENSOR MICROSYSTEMS BY AN OPTICAL INTERFEROMETER TECHNIQUE, Microelectronics, 29(4-5), 1998, pp. 191-198
Authors:
POGANY D
SELIGER N
GORNIK E
STOISIEK M
LALINSKY T
Citation: D. Pogany et al., ANALYSIS OF THE TEMPERATURE EVOLUTION FROM THE TIME-RESOLVED THERMOOPTICAL INTERFEROMETRIC MEASUREMENTS WITH FEW FABRY-PEROT PEAKS, Journal of applied physics, 84(8), 1998, pp. 4495-4501
Authors:
LALINSKY T
OSVALD J
MACHAJDIK D
MOZOLOVA Z
SISOLAK J
CONSTANTINIDIS G
KOBZEV AP
Citation: T. Lalinsky et al., HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES - EFFECT OF THE BARRIER HEIGHT CONTROLLING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 657-661
Authors:
HASCIK S
LALINSKY T
KUZMIK J
PORGES M
MOZOLOVA Z
Citation: S. Hascik et al., THE FABRICATION OF THIN GAAS CANTILEVER BEAMS FOR POWER SENSOR MICROSYSTEM USING RIE, Vacuum, 47(10), 1996, pp. 1215-1217
Authors:
PORGES M
SAFRANKOVA J
LALINSKY T
KOSTIC I
RANGELOW IW
TEGUDE FJ
JAGER D
Citation: M. Porges et al., ASYMMETRIC (SCHOTTKY-OHMIC) MSM PHOTODETECTOR, Solid-state electronics, 38(2), 1995, pp. 425-427
Authors:
LALINSKY T
KUZMIK J
PORGES M
HASCIK S
MOZOLOVA Z
GRNO L
Citation: T. Lalinsky et al., MONOLITHIC GAAS-MESFET POWER SENSOR MICROSYSTEM, Electronics Letters, 31(22), 1995, pp. 1914-1915
Authors:
GREGUSOVA D
LALINSKY T
MOZOLOVA Z
MACHAJDIK D
POCHABA I
VAVRA I
PORGES M
Citation: D. Gregusova et al., CHARACTERIZATION OF WNX METALLIZATION PREPARED BY ION-IMPLANTATION OFNITROGEN, Thin solid films, 249(2), 1994, pp. 250-253
Authors:
LALINSKY T
GREGUSOVA D
MOZOLOVA Z
BREZA J
VOGRINCIC P
Citation: T. Lalinsky et al., HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES/, Applied physics letters, 64(14), 1994, pp. 1818-1820
Authors:
OSVALD J
LALINSKY T
Citation: J. Osvald et T. Lalinsky, BARRIER HEIGHT ENHANCEMENT IN WSIX GAAS SCHOTTKY DIODES BY RAPID THERMAL ANNEALING/, Journal of materials science. Materials in electronics, 4(4), 1993, pp. 267-270
Authors:
GREGUSOVA D
LALINSKY T
MOZOLOVA Z
BREZA J
VOGRINCIC P
Citation: D. Gregusova et al., THE EFFECT OF OXYGEN IN WNX FILMS ON THERMAL-STABILITY OF WNX GAAS INTERFACES/, Journal of materials science. Materials in electronics, 4(3), 1993, pp. 197-199
Authors:
SAFRANKOVA J
PORGES M
LALINSKY T
MOZOLOVA Z
HUDEK P
KOSTIC I
KRAUS J
VONWENDORFF W
TEGUDE FJ
JAGER D
Citation: J. Safrankova et al., PHOTOELECTRICAL PROPERTIES OF GAAS MSM PHOTODETECTOR COMPATIBLE WITH PSEUDOMORPHIC HETEROSTRUCTURE MESFET, Physica status solidi. a, Applied research, 140(2), 1993, pp. 111-114
Authors:
PORGES M
LALINSKY T
SAFRANKOVA J
HUDEK P
KRAUS J
TEGUDE FJ
VONWENDORFF W
JAGER D
Citation: M. Porges et al., GAAS MSM PHOTODIODE USING THE HIGHLY DOPED CHANNEL LAYER OF A HETEROSTRUCTURE MESFET, Physica status solidi. a, Applied research, 136(1), 1993, pp. 65-69
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