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Results:
1-17
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Results: 17
Authors:
LARSSON MI
TRINGIDES MC
PFNUR H
FRISCHAT H
BUDDE K
KAMMLER M
HENZLER M
Citation: Mi. Larsson et al., INTENSITY FLUCTUATIONS FROM SURFACES AND THE ASSESSMENT OF TIME CONSTANTS, Surface science, 411(1-2), 1998, pp. 789-793
Authors:
LARSSON MI
BETHGE H
KOHLER U
MENKE S
HENZLER M
Citation: Mi. Larsson et al., RANDOM-WALK MECHANISM FOR STEP RETRACTION ON HYDROGEN-ETCHED SI(111), Physical review. B, Condensed matter, 56(3), 1997, pp. 1021-1024
Authors:
LARSSON MI
Citation: Mi. Larsson, SURFACE-DIFFUSION MECHANISM FOR STEP BUNCHING, Physical review. B, Condensed matter, 56(23), 1997, pp. 15157-15166
Authors:
LARSSON MI
TRINGIDES M
FRISCHAT H
WOLLSCHLAGER J
Citation: Mi. Larsson et al., THERMAL ROUGHENING OF UNCORRELATED STEPS, Surface science, 387(1-3), 1997, pp. 142-151
Authors:
LARSSON MI
FRISCHAT H
WOLLSCHLAGER J
TRINGIDES MC
Citation: Mi. Larsson et al., PROPERTIES OF KINKS IN VICINAL FACE-CENTERED-CUBIC (111)SURFACES, Surface science, 381(2-3), 1997, pp. 123-132
Authors:
TRINGIDES MC
LARSSON MI
PFNUR H
FRISCHAT H
BUDDE K
HENZLER M
Citation: Mc. Tringides et al., ARE EQUILIBRIUM FLUCTUATIONS DETECTABLE IN DIFFRACTED INTENSITIES, Journal of applied physics, 82(4), 1997, pp. 1507-1510
Authors:
LARSSON MI
NI WX
HANSSON GV
Citation: Mi. Larsson et al., MANIPULATION OF NUCLEATION BY GROWTH-RATE MODULATION, Journal of applied physics, 78(6), 1995, pp. 3792-3796
Authors:
LARSSON MI
HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, MODELING AND APPLICATION OF SYNCHRONIZATION OF NUCLEATION BY MEANS OFINTERMITTENT RADIANT HEATING, JPN J A P 1, 33(4B), 1994, pp. 2282-2289
Authors:
LARSSON MI
NI WX
HANSSON GV
Citation: Mi. Larsson et al., PHASE MANIPULATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS, Europhysics letters, 27(7), 1994, pp. 513-518
Authors:
LARSSON MI
NI WX
HANSSON GV
Citation: Mi. Larsson et al., TEMPERATURE-INDUCED MANIPULATION OF NUCLEATION DURING SI AND GE MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 50(8), 1994, pp. 5335-5344
Authors:
LARSSON MI
HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, INITIAL-STAGES OF SI-MOLECULAR BEAM EPITAXY ON SI(111) STUDIED WITH REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY MEASUREMENTS AND MONTE-CARLO SIMULATIONS, Surface science, 321(3), 1994, pp. 255-260
Authors:
NI WX
HENRY A
LARSSON MI
JOELSSON K
HANSSON GV
Citation: Wx. Ni et al., HIGH-QUALITY SI SI1-XGEX LAYERED STRUCTURES GROWN USING A MASS-SPECTROMETRY CONTROLLED ELECTRON-BEAM EVAPORATION SYSTEM/, Applied physics letters, 65(14), 1994, pp. 1772-1774
Authors:
LARSSON MI
NI WX
JOELSSON K
HANSSON GV
Citation: Mi. Larsson et al., GROWTH OF HIGH-QUALITY GE FILMS ON SI(111) USING SB AS SURFACTANT, Applied physics letters, 65(11), 1994, pp. 1409-1411
Authors:
LARSSON MI
HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, METHOD TO CALCULATE SUBSTRATE-TEMPERATURE DURING INTERMITTENT RADIANTHEATING IN VACUUM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(3), 1993, pp. 732-735
Authors:
LARSSON MI
HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, SYNCHRONIZATION OF NUCLEATION STUDIED WITH MONTE-CARLO SIMULATIONS AND APPLIED TO SI1-XGEX MOLECULAR-BEAM EPITAXY, Surface science, 292(1-2), 1993, pp. 98-113
Authors:
LARSSON MI
HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, MONTE-CARLO SIMULATIONS OF GE SEGREGATION IN STRAINED SI AND SIGE ALLOYS, Surface science, 291(1-2), 1993, pp. 117-128
Authors:
LARSSON MI
HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, METHOD USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY TODETERMINE THE SOLID SOLUBILITY LIMIT FOR BORON IN SILICON AND SI1-XGEX LAYERS, Journal of crystal growth, 134(3-4), 1993, pp. 203-210
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1-17
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