AAAAAA

   
Results: 1-25 | 26-50 | 51-75 | 76-85
Results: 51-75/85
PARTICLE CONTAMINATIONS IN LPCVD POLYSILICON
Authors: CHEN WH CHAO TS LIU YN CHOU KS LEI TF
Citation: Wh. Chen et al., PARTICLE CONTAMINATIONS IN LPCVD POLYSILICON, Electronics Letters, 31(3), 1995, pp. 239-241
HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING())
Authors: LIOU BW LEE CL LEI TF
Citation: Bw. Liou et al., HIGH BREAKDOWN VOLTAGE SCHOTTKY-BARRIER DIODE USING P(-POLYCRYSTALLINE SILICON DIFFUSED GUARD RING()), Electronics Letters, 31(22), 1995, pp. 1950-1951
HIGH-BARRIER PT AL N-INP DIODE
Authors: HUANG WC LEI TF LEE CL
Citation: Wc. Huang et al., HIGH-BARRIER PT AL N-INP DIODE, Electronics Letters, 31(11), 1995, pp. 924-925
INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS
Authors: CHEN TP LEI TF CHANG CY HSIEH WY CHEN LJ
Citation: Tp. Chen et al., INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS, Journal of the Electrochemical Society, 142(6), 1995, pp. 2000-2006
CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
Authors: CHAO TS LEI TF
Citation: Ts. Chao et Tf. Lei, CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O, Journal of the Electrochemical Society, 142(3), 1995, pp. 34-35
CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE
Authors: CHEN TP LEI TF LIN HC CHANG CY
Citation: Tp. Chen et al., CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE, Journal of the Electrochemical Society, 142(2), 1995, pp. 532-537
A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
Authors: CHENG JY LEI TF CHAO TS
Citation: Jy. Cheng et al., A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH, Journal of the Electrochemical Society, 142(10), 1995, pp. 187-188
RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
Authors: YANG CK LEE CL LEI TF CHERN HN
Citation: Ck. Yang et al., RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Applied physics letters, 67(23), 1995, pp. 3477-3479
THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS
Authors: LIOU BW WU YH LEE CL LEI TF
Citation: Bw. Liou et al., THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS, Applied physics letters, 66(22), 1995, pp. 3013-3014
MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY
Authors: CHAO TS LEI TF CHANG CY LEE CL
Citation: Ts. Chao et al., MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY, JPN J A P 1, 33(4A), 1994, pp. 2031-2034
SUPPRESSION OF THE BORON PENETRATION INDUCED SI SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET/
Authors: WU SL LEE CL LEI TF CHEN JF CHEN LJ
Citation: Sl. Wu et al., SUPPRESSION OF THE BORON PENETRATION INDUCED SI SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFET/, IEEE electron device letters, 15(5), 1994, pp. 160-162
IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION
Authors: CHERN HN LEE CL LEI TF
Citation: Hn. Chern et al., IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION, IEEE electron device letters, 15(5), 1994, pp. 181-182
ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P--N SHALLOW JUNCTION FORMATION()
Authors: WU SL LEE CL LEI TF CHEN CF CHEN LJ HO KZ LING YC
Citation: Sl. Wu et al., ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P--N SHALLOW JUNCTION FORMATION(), IEEE electron device letters, 15(4), 1994, pp. 120-122
THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS
Authors: YANG CK LEI TF LEE CL
Citation: Ck. Yang et al., THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 15(10), 1994, pp. 389-390
PD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIER
Authors: HUANG WC LEI TF LEE CL
Citation: Wc. Huang et al., PD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIER, Journal of electronic materials, 23(4), 1994, pp. 397-401
THE DOUBLE RESONANT ENHANCEMENT OF OPTICAL 2ND-HARMONIC SUSCEPTIBILITY IN THE COMPOSITIONALLY ASYMMETRIC COUPLED-QUANTUM-WELL
Authors: LIEN CS HUANG YM LEI TF
Citation: Cs. Lien et al., THE DOUBLE RESONANT ENHANCEMENT OF OPTICAL 2ND-HARMONIC SUSCEPTIBILITY IN THE COMPOSITIONALLY ASYMMETRIC COUPLED-QUANTUM-WELL, Journal of applied physics, 75(4), 1994, pp. 2177-2183
THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS
Authors: CHERN HN LEE CL LEI TF
Citation: Hn. Chern et al., THE EFFECTS OF FLUORINE PASSIVATION ON POLYSILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 698-702
CORRELATION OF POLYSILICON THIN-FILM-TRANSISTOR CHARACTERISTICS TO DEFECT STATES VIA THERMAL ANNEALING
Authors: CHERN HN LEE CL LEI TF
Citation: Hn. Chern et al., CORRELATION OF POLYSILICON THIN-FILM-TRANSISTOR CHARACTERISTICS TO DEFECT STATES VIA THERMAL ANNEALING, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 460-462
MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON
Authors: CHAO TS LEE CL LEI TF
Citation: Ts. Chao et al., MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON, Journal of the Electrochemical Society, 141(8), 1994, pp. 2146-2151
DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURES
Authors: LIN HC LIN HY CHANG CY LEI TF WANG PJ DENG RC LIN JD
Citation: Hc. Lin et al., DEPOSITION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SILICON FILMS AT REDUCED PRESSURES, Applied physics letters, 64(6), 1994, pp. 763-765
LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
Authors: CHEN TP LEI TF LIN HC CHANG CY HSIEH WY CHEN LJ
Citation: Tp. Chen et al., LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 64(14), 1994, pp. 1853-1855
TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS)
Authors: WU SL LEE CL LEI TF
Citation: Sl. Wu et al., TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS), IEEE electron device letters, 14(8), 1993, pp. 379-381
THE REFRACTIVE-INDEX OF INP AND ITS OXIDE MEASURED BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY
Authors: CHAO TS LEE CL LEI TF
Citation: Ts. Chao et al., THE REFRACTIVE-INDEX OF INP AND ITS OXIDE MEASURED BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY, Journal of materials science letters, 12(10), 1993, pp. 721-723
THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS
Authors: WU SL LEE CL LEI TF
Citation: Sl. Wu et al., THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS, Solid-state electronics, 36(12), 1993, pp. 1725-1730
DEPOSITION AND DEVICE APPLICATION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SIGE FILMS GROWN AT LOW-TEMPERATURES
Authors: LIN HC JUNG TG LIN HY CHANG CY LEI TF WANG PJ DENG RC LIN JD CHAO CY
Citation: Hc. Lin et al., DEPOSITION AND DEVICE APPLICATION OF IN-SITU BORON-DOPED POLYCRYSTALLINE SIGE FILMS GROWN AT LOW-TEMPERATURES, Journal of applied physics, 74(9), 1993, pp. 5395-5401
Risultati: 1-25 | 26-50 | 51-75 | 76-85