ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-50 | 51-61

Results: 26-50/61

SI(110)16X2 AND SI(110)2X3-SB SURFACES STUDIED BY PHOTOEMISSION AND OPTICAL SPECTROSCOPY

Authors: CRICENTI A PERFETTI P NESTERENKO B LELAY G SEBENNE C

Citation: A. Cricenti et al., SI(110)16X2 AND SI(110)2X3-SB SURFACES STUDIED BY PHOTOEMISSION AND OPTICAL SPECTROSCOPY, Applied surface science, 104, 1996, pp. 118-123

NEW POSSIBILITIES FOR THE CHARACTERIZATION OF DEFECTS IN ALPHA-HGI2 CRYSTALS BY SYNCHROTRON X-RAY TOPOGRAPHY

Authors: GASTALDI J ROSSBERG A SMOLSKY I LELAY G

Citation: J. Gastaldi et al., NEW POSSIBILITIES FOR THE CHARACTERIZATION OF DEFECTS IN ALPHA-HGI2 CRYSTALS BY SYNCHROTRON X-RAY TOPOGRAPHY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 79-83

RHODOCOCCUS-EQUI CAUSING BACTEREMIA AND PNEUMONIA IN A PULMONARY TRANSPLANT PATIENT

Authors: LELAY G MARTIN F LEROYER C ABALAIN ML CREDOZ L CHASTEL C

Citation: G. Lelay et al., RHODOCOCCUS-EQUI CAUSING BACTEREMIA AND PNEUMONIA IN A PULMONARY TRANSPLANT PATIENT, The Journal of infection, 33(3), 1996, pp. 239-240

BIAS-DEPENDENT IMAGING OF THE IN-TERMINATED INAS(001) (4X2) C(8X2) SURFACE BY STM - RECONSTRUCTION AND TRANSITIONAL DEFECT/

Authors: KENDRICK C LELAY G KAHN A

Citation: C. Kendrick et al., BIAS-DEPENDENT IMAGING OF THE IN-TERMINATED INAS(001) (4X2) C(8X2) SURFACE BY STM - RECONSTRUCTION AND TRANSITIONAL DEFECT/, Physical review. B, Condensed matter, 54(24), 1996, pp. 17877-17883

ELECTRONIC STATES ON CLEAN SI(110)16X2 AND SI(110)2X3-SB SURFACES BY PHOTOEMISSION AND OPTICAL SPECTROSCOPY

Authors: CRICENTI A PERFETTI P NESTERENKO B LELAY G SEBENNE C

Citation: A. Cricenti et al., ELECTRONIC STATES ON CLEAN SI(110)16X2 AND SI(110)2X3-SB SURFACES BY PHOTOEMISSION AND OPTICAL SPECTROSCOPY, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 481-486

HIGH-RESOLUTION SYNCROTRON RADIATION SI 2P CORE-LEVEL SPECTROSCOPY OFSI(110)16X2

Authors: CRICENTI A LELAY G ARISTOV VY NESTERENKO B SAFTA N LACHARME JP SEBENNE CA TALEBIBRAHIMI A INDLEKOFER G

Citation: A. Cricenti et al., HIGH-RESOLUTION SYNCROTRON RADIATION SI 2P CORE-LEVEL SPECTROSCOPY OFSI(110)16X2, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 613-617

IDENTIFICATION OF THE SURFACE COMPONENTS IN THE HIGH-RESOLUTION SI 2PCORE-LEVEL SPECTRA OF THE LOW-INDEX SILICON SURFACES

Authors: LELAY G

Citation: G. Lelay, IDENTIFICATION OF THE SURFACE COMPONENTS IN THE HIGH-RESOLUTION SI 2PCORE-LEVEL SPECTRA OF THE LOW-INDEX SILICON SURFACES, Materials chemistry and physics, 40(3), 1995, pp. 212-218

CESIUM-INDUCED QUANTIZED 2D ELECTRON CHANNEL ON THE INAS(110) SURFACE

Authors: ARISTOV VY LELAY G GREHK M ZHILIN VM TALEBIBRAHIMI A INDLEKOFER G SOUKIASSIAN P

Citation: Vy. Aristov et al., CESIUM-INDUCED QUANTIZED 2D ELECTRON CHANNEL ON THE INAS(110) SURFACE, Surface review and letters, 2(6), 1995, pp. 723-729

NEW ELECTRONIC STATES ON CLEAN SI(110)-16X2 SURFACES

Authors: CRICENTI A NESTERENKO B PERFETTI P LELAY G SEBENNE C

Citation: A. Cricenti et al., NEW ELECTRONIC STATES ON CLEAN SI(110)-16X2 SURFACES, Surface review and letters, 2(5), 1995, pp. 573-577

CORE-LEVEL SPECTRA OF CLEAN 2X8 VICINAL SI(110)

Authors: SAFTA N LACHARME JP CRICENTI A TALEBIBRAHIMI A INDLEKOFER G ARISTOV V SEBENNE CA LELAY G NESTERENKO B

Citation: N. Safta et al., CORE-LEVEL SPECTRA OF CLEAN 2X8 VICINAL SI(110), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 97(1-4), 1995, pp. 372-374

METAL-SEMICONDUCTOR FLUCTUATION IN THE SN ADATOMS IN THE SI(111)-SN AND GE(111)-SN (ROOT-3X-ROOT-3)R30-DEGREES RECONSTRUCTIONS

Authors: GOTHELID M BJORKQVIST M GREHK TM LELAY G KARLSSON UO

Citation: M. Gothelid et al., METAL-SEMICONDUCTOR FLUCTUATION IN THE SN ADATOMS IN THE SI(111)-SN AND GE(111)-SN (ROOT-3X-ROOT-3)R30-DEGREES RECONSTRUCTIONS, Physical review. B, Condensed matter, 52(20), 1995, pp. 14352-14355

STRUCTURAL AND ELECTRONIC EVOLUTION ON THE GE(111)-AG SURFACE

Authors: GOTHELID M HAMMAR M KARLSSON UO WIGREN C LELAY G

Citation: M. Gothelid et al., STRUCTURAL AND ELECTRONIC EVOLUTION ON THE GE(111)-AG SURFACE, Physical review. B, Condensed matter, 52(19), 1995, pp. 14104-14110

HIGH-RESOLUTION SYNCHROTRON-RADIATION CORE-LEVEL SPECTROSCOPY OF SEMICONDUCTOR SURFACES

Authors: LELAY G ARISTOV VY FONTAINE M

Citation: G. Lelay et al., HIGH-RESOLUTION SYNCHROTRON-RADIATION CORE-LEVEL SPECTROSCOPY OF SEMICONDUCTOR SURFACES, Progress in Surface Science, 48(1-4), 1995, pp. 145-156

LUMINESCENCE FROM A SI-SIO2 NANOCLUSTER-LIKE STRUCTURE PREPARED BY LASER-ABLATION

Authors: MOVTCHAN IA DREYFUS RW MARINE W SENTIS M AUTRIC M LELAY G MERK N

Citation: Ia. Movtchan et al., LUMINESCENCE FROM A SI-SIO2 NANOCLUSTER-LIKE STRUCTURE PREPARED BY LASER-ABLATION, Thin solid films, 255(1-2), 1995, pp. 286-289

NA INAS(110) INTERFACE FORMATION AT RT

Authors: ARISTOV VY MANGAT PS SOUKIASSIAN P LELAY G

Citation: Vy. Aristov et al., NA INAS(110) INTERFACE FORMATION AT RT, Surface science, 333, 1995, pp. 641-645

TICK-BORNE ARBOVIRUSES FROM MAGHREB

Authors: CHASTEL C BAILLYCHOUMARA H BACHHAMBA D LELAY G

Citation: C. Chastel et al., TICK-BORNE ARBOVIRUSES FROM MAGHREB, Bulletin de la Societe de pathologie exotique et de ses filiales, 88(3), 1995, pp. 81-85

PROCEEDINGS OF THE EUROPEAN SYMPOSIUM ON FRONTIERS IN SCIENCE AND TECHNOLOGY WITH SYNCHROTRON-RADIATION - AIX-EN-PROVENCE, FRANCE, APRIL 5-8 1994

Authors: GAY JM LELAY G MATHEY Y

Citation: Jm. Gay et al., PROCEEDINGS OF THE EUROPEAN SYMPOSIUM ON FRONTIERS IN SCIENCE AND TECHNOLOGY WITH SYNCHROTRON-RADIATION - AIX-EN-PROVENCE, FRANCE, APRIL 5-8 1994, Journal de physique. IV, 4(C9), 1994, pp. 3-3

SYNCHROTRON X-RAY TRANSMISSION TOPOGRAPHY OF VAPOR-GROWN ALPHA-HGI2 CRYSTALS

Authors: REMY F GASTALDI J LELAY G ROSSBERG A PIECHOTKA M WETZEL G KALDIS E

Citation: F. Remy et al., SYNCHROTRON X-RAY TRANSMISSION TOPOGRAPHY OF VAPOR-GROWN ALPHA-HGI2 CRYSTALS, Journal de physique. IV, 4(C9), 1994, pp. 203-207

SURFACE CARE-LEVEL SHIFTS OF SI(111)7X7

Authors: LELAY G ARISTOV VY FONTAINE M

Citation: G. Lelay et al., SURFACE CARE-LEVEL SHIFTS OF SI(111)7X7, Journal de physique. IV, 4(C9), 1994, pp. 213-216

GIANT BAND BENDING AND INTERFACE FORMATION OF CS INAS(110) AT ROOM-TEMPERATURE/

Authors: ARISTOV VY MANGAT PS SOUKIASSIAN P LELAY G

Citation: Vy. Aristov et al., GIANT BAND BENDING AND INTERFACE FORMATION OF CS INAS(110) AT ROOM-TEMPERATURE/, Journal de physique. IV, 4(C9), 1994, pp. 217-220

CS-INDUCED HIGHEST E(F) JUMP ABOVE INAS(110) CONDUCTION-BAND MINIMUM

Authors: ARISTOV VY LELAY G SOUKIASSIAN P HRICOVINI K BONNET JE OSVALD J OLSSON O

Citation: Vy. Aristov et al., CS-INDUCED HIGHEST E(F) JUMP ABOVE INAS(110) CONDUCTION-BAND MINIMUM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2709-2712

NEARLY COMPLETE TUNING OF THE FERMI-LEVEL POSITION AT A PROTOTYPICAL METAL-SILICON INTERFACE - LEAD ON UNPINNED SI(111)1X1-H

Authors: ARISTOV VY LELAY G HRICOVINI K TALEBIBRAHIMI A DUMAS P GUNTHER R OSVALD J INDLEKOFER G

Citation: Vy. Aristov et al., NEARLY COMPLETE TUNING OF THE FERMI-LEVEL POSITION AT A PROTOTYPICAL METAL-SILICON INTERFACE - LEAD ON UNPINNED SI(111)1X1-H, Journal of electron spectroscopy and related phenomena, 68, 1994, pp. 419-426

ALKALI-METAL INDUCED HIGHEST FERMI-LEVEL PINNING POSITION ABOVE SEMICONDUCTOR CONDUCTION-BAND MINIMUM

Authors: ARISTOV VY LELAY G SOUKIASSIAN P HRICOVINI K BONNET JE OSVALD J OLSSON O

Citation: Vy. Aristov et al., ALKALI-METAL INDUCED HIGHEST FERMI-LEVEL PINNING POSITION ABOVE SEMICONDUCTOR CONDUCTION-BAND MINIMUM, Europhysics letters, 26(5), 1994, pp. 359-364

GEOMETRY OF THE GE(111)-AU(ROOT-3X-ROOT-3)R 30-DEGREES RECONSTRUCTION

Authors: GOTHELID M HAMMAR M BJORKQVIST M KARLSSON UO FLODSTROM SA WIGREN C LELAY G

Citation: M. Gothelid et al., GEOMETRY OF THE GE(111)-AU(ROOT-3X-ROOT-3)R 30-DEGREES RECONSTRUCTION, Physical review. B, Condensed matter, 50(7), 1994, pp. 4470-4475

SURFACE CORE-LEVEL SHIFTS OF SI(111)7X7 - A FUNDAMENTAL REASSESSMENT

Authors: LELAY G GOTHELID M GREHK TM BJORKQUIST M KARLSSON UO ARISTOV VY

Citation: G. Lelay et al., SURFACE CORE-LEVEL SHIFTS OF SI(111)7X7 - A FUNDAMENTAL REASSESSMENT, Physical review. B, Condensed matter, 50(19), 1994, pp. 14277-14282

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