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Results: 1-25 | 26-40
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POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS
Authors: LESZCZYNSKI M PRYSTAWKO P SLIWINSKI A SUSKI T LITWINSTASZEWSKA E POROWSKI S PASZKIEWICZ R TLACZALA M BEAUMONT B GIBART P BARSKI A LANGER R KNAP W FRAYSSINET E
Citation: M. Leszczynski et al., POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 94(3), 1998, pp. 427-430
RECYCLED CRYSTALLIZATION OF ZNTE BY EVAPORATION-CONDENSATION
Authors: SZCZERBAKOW A DOMAGALA J GOLACKI Z IVANOV VY LESZCZYNSKI M
Citation: A. Szczerbakow et al., RECYCLED CRYSTALLIZATION OF ZNTE BY EVAPORATION-CONDENSATION, Crystal research and technology, 33(6), 1998, pp. 875-879
BLUE-LIGHT-EMITTING DIODES ON GAN SUBSTRATES, GROWTH AND CHARACTERIZATION
Authors: PELZMANN A KIRCHNER C MAYER M SCHWEGLER V SCHAULER M KAMP M EBELING KJ GRZEGORY I LESZCZYNSKI M NOWAK G POROWSKI S
Citation: A. Pelzmann et al., BLUE-LIGHT-EMITTING DIODES ON GAN SUBSTRATES, GROWTH AND CHARACTERIZATION, Journal of crystal growth, 190, 1998, pp. 167-171
OPTICAL ACTIVATION AND DIFFUSIVITY OF ION-IMPLANTED ZN ACCEPTORS IN GAN UNDER HIGH-PRESSURE, HIGH-TEMPERATURE ANNEALING
Authors: SUSKI T JUN J LESZCZYNSKI M TEISSEYRE H STRITE S ROCKETT A PELZMANN A KAMP M EBELING KJ
Citation: T. Suski et al., OPTICAL ACTIVATION AND DIFFUSIVITY OF ION-IMPLANTED ZN ACCEPTORS IN GAN UNDER HIGH-PRESSURE, HIGH-TEMPERATURE ANNEALING, Journal of applied physics, 84(2), 1998, pp. 1155-1157
HIGH-QUALITY HOMOEPITAXIAL GAN GROWN BY MOLECULAR-BEAM EPITAXY WITH NH3 ON SURFACE CRACKING
Authors: MAYER M PELZMANN A KAMP M EBELING KJ TEISSEYRE H NOWAK G LESZCZYNSKI M GRZEGORY I POROWSKI S KARCZEWSKI G
Citation: M. Mayer et al., HIGH-QUALITY HOMOEPITAXIAL GAN GROWN BY MOLECULAR-BEAM EPITAXY WITH NH3 ON SURFACE CRACKING, JPN J A P 2, 36(12B), 1997, pp. 1634-1636
CONDUCTANCE ANOMALIES IN STRAINED QUANTUM WIRES - THE CASE OF PBSE AND PBTE
Authors: GRABECKI G WROBEL J DIETL T SAWICKI M DOMAGALA J SKOSKIEWICZ T PAPIS E KAMINSKA E PIOTROWSKA A LESZCZYNSKI M UETA Y SPRINHOLTZ G BAUER G
Citation: G. Grabecki et al., CONDUCTANCE ANOMALIES IN STRAINED QUANTUM WIRES - THE CASE OF PBSE AND PBTE, Superlattices and microstructures, 22(1), 1997, pp. 51-55
HIGH-RESISTIVITY GAN SINGLE-CRYSTALLINE SUBSTRATES
Authors: POROWSKI S BOCKOWSKI M LUCZNIK B GRZEGORY I WROBLEWSKI M TEISSEYRE H LESZCZYNSKI M LITWINSTASZEWSKA E SUSKI T TRAUTMAN P PAKULA K BARANOWSKI J
Citation: S. Porowski et al., HIGH-RESISTIVITY GAN SINGLE-CRYSTALLINE SUBSTRATES, Acta Physica Polonica. A, 92(5), 1997, pp. 958-962
ANISOTROPIC LATTICE MISFIT RELAXATION IN ALGAAS SEMI-BULK LAYERS GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY
Authors: ZYTKIEWICZ ZR DOMAGALA J BAKMISIUK J DOBOSZ D LESZCZYNSKI M
Citation: Zr. Zytkiewicz et al., ANISOTROPIC LATTICE MISFIT RELAXATION IN ALGAAS SEMI-BULK LAYERS GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY, Acta Physica Polonica. A, 92(5), 1997, pp. 1092-1096
EXAMPLES OF MICROSTRUCTURE-RELATED PROPERTIES OF GALLIUM NITRIDE
Authors: LESZCZYNSKI M
Citation: M. Leszczynski, EXAMPLES OF MICROSTRUCTURE-RELATED PROPERTIES OF GALLIUM NITRIDE, Acta Physica Polonica. A, 92(4), 1997, pp. 653-661
EFFECT OF DOPING ON GA1-XALXAS STRUCTURAL-PROPERTIES
Authors: BAKMISIUK J DOMAGALA J PASZKOWICZ W TRELA J ZYTKIEWICZ ZR LESZCZYNSKI M REGINSKI K MUSZALSKI J HARTWIG J OHLER M
Citation: J. Bakmisiuk et al., EFFECT OF DOPING ON GA1-XALXAS STRUCTURAL-PROPERTIES, Acta Physica Polonica. A, 91(5), 1997, pp. 911-915
PHYSICAL-PROPERTIES OF ALGAAS EPILAYERS SUBJECTED TO HIGH-PRESSURE-HIGH-TEMPERATURE TREATMENT
Authors: SZUSZKIEWICZ W GEBICKI W BAKMISIUK J DOMAGALA J LESZCZYNSKI M HARTWIG J
Citation: W. Szuszkiewicz et al., PHYSICAL-PROPERTIES OF ALGAAS EPILAYERS SUBJECTED TO HIGH-PRESSURE-HIGH-TEMPERATURE TREATMENT, Acta Physica Polonica. A, 91(5), 1997, pp. 1003-1007
INFLUENCE OF FREE-ELECTRONS AND POINT-DEFECTS ON THE LATTICE-PARAMETERS AND THERMAL-EXPANSION OF GALLIUM NITRIDE
Authors: LESZCZYNSKI M TEISSEYRE H SUSKI T GRZEGORY I BOCKOWSKI M JUN J POROWSKI S BAKMISIUK J DOMAGALA J
Citation: M. Leszczynski et al., INFLUENCE OF FREE-ELECTRONS AND POINT-DEFECTS ON THE LATTICE-PARAMETERS AND THERMAL-EXPANSION OF GALLIUM NITRIDE, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 585-590
HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: TEISSEYRE H LESZCZYNSKI M SUSKI T GRZEGORY I BOCKOWSKI M JUN J POROWSKI S PAKULA K ROBERT JL BEAUMONT B GIBART P VAILLE M FAURIE JP
Citation: H. Teisseyre et al., HOMOEPITAXIAL LAYERS OF GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Semiconductor science and technology, 12(2), 1997, pp. 240-243
OBSERVATION OF NATIVE GA VACANCIES IN GAN BY POSITRON-ANNIHILATION
Authors: SAARINEN K LAINE T KUISMA S NISSILA J HAUTOJARVI P DOBRZYNSKI L BARANOWSKI JM PAKULA K STEPNIEWSKI R WOJDAK M WYSMOLEK A SUSKI T LESZCZYNSKI M GRZEGORY I POROWSKI S
Citation: K. Saarinen et al., OBSERVATION OF NATIVE GA VACANCIES IN GAN BY POSITRON-ANNIHILATION, Physical review letters, 79(16), 1997, pp. 3030-3033
THERMAL-EXPANSION OF GAAS-TE AND ALGAAS-TE AT LOW-TEMPERATURES
Authors: LESZCZYNSKI M PLUZHNIKOV VB CZOPNIK A BAKMISIUK J SLUPINSKI T
Citation: M. Leszczynski et al., THERMAL-EXPANSION OF GAAS-TE AND ALGAAS-TE AT LOW-TEMPERATURES, Journal of applied physics, 82(9), 1997, pp. 4678-4680
THERMAL-EXPANSION OF GAN BULK CRYSTALS AND HOMOEPITAXIAL LAYERS
Authors: LESZCZYNSKI M TEISSEYRE H SUSKI T GRZEGORY I BOCKOWSKI M JUN J PALOSZ B POROWSKI S PAKULA K BARANOWSKI JM BARSKI A
Citation: M. Leszczynski et al., THERMAL-EXPANSION OF GAN BULK CRYSTALS AND HOMOEPITAXIAL LAYERS, Acta Physica Polonica. A, 90(5), 1996, pp. 887-890
TRANSFORMATION OF ALGAAS GAAS INTERFACE UNDER HYDROSTATIC-PRESSURE/
Authors: BAKMISIUK J DOMAGALA J TRELA J LESZCZYNSKI M MISIUK A HARTWIG J PRIEUR E
Citation: J. Bakmisiuk et al., TRANSFORMATION OF ALGAAS GAAS INTERFACE UNDER HYDROSTATIC-PRESSURE/, Acta Physica Polonica. A, 89(3), 1996, pp. 405-409
PRESSURE AND TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF MG-DOPED AND UNDOPED GAN
Authors: TEISSEYRE H KOZANKIEWICZ B LESZCZYNSKI M GRZEGORY I SUSKI T BOCKOWSKI M POROWSKI S PAKULA K MENSZ PM BHAT IB
Citation: H. Teisseyre et al., PRESSURE AND TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF MG-DOPED AND UNDOPED GAN, Physica status solidi. b, Basic research, 198(1), 1996, pp. 235-241
X-RAY-DIFFRACTION EXAMINATIONS OF EL2-LIKE DEFECT METASTABILITY IN LOW-TEMPERATURE GALLIUM-ARSENIDE
Authors: LESZCZYNSKI M
Citation: M. Leszczynski, X-RAY-DIFFRACTION EXAMINATIONS OF EL2-LIKE DEFECT METASTABILITY IN LOW-TEMPERATURE GALLIUM-ARSENIDE, Physical review. B, Condensed matter, 53(16), 1996, pp. 10699-10702
THE MICROSTRUCTURE OF GALLIUM NITRIDE MONOCRYSTALS GROWN AT HIGH-PRESSURE
Authors: LESZCZYNSKI M GRZEGORY I TEISSEYRE H SUSKI T BOCKOWSKI M JUN J BARANOWSKI JM POROWSKI S DOMAGALA J
Citation: M. Leszczynski et al., THE MICROSTRUCTURE OF GALLIUM NITRIDE MONOCRYSTALS GROWN AT HIGH-PRESSURE, Journal of crystal growth, 169(2), 1996, pp. 235-242
INFLUENCE OF REDISTRIBUTION OF ELECTRONS IN THE CONDUCTION-BAND ON THE LATTICE-PARAMETERS OF ALXGA1-XAS
Authors: BAKMISIUK J LESZCZYNSKI M PASZKOWICZ W DOMAGALA J
Citation: J. Bakmisiuk et al., INFLUENCE OF REDISTRIBUTION OF ELECTRONS IN THE CONDUCTION-BAND ON THE LATTICE-PARAMETERS OF ALXGA1-XAS, Applied physics letters, 69(22), 1996, pp. 3366-3368
LATTICE-PARAMETERS OF GALLIUM NITRIDE
Authors: LESZCZYNSKI M TEISSEYRE H SUSKI T GRZEGORY I BOCKOWSKI M JUN J POROWSKI S PAKULA K BARANOWSKI JM FOXON CT CHENG TS
Citation: M. Leszczynski et al., LATTICE-PARAMETERS OF GALLIUM NITRIDE, Applied physics letters, 69(1), 1996, pp. 73-75
LATTICE-CONSTANT OF DOPED SEMICONDUCTOR
Authors: LESZCZYNSKI M LITWINSTASZEWSKA E SUSKI T BAKMISIUK J DOMAGALA J
Citation: M. Leszczynski et al., LATTICE-CONSTANT OF DOPED SEMICONDUCTOR, Acta Physica Polonica. A, 88(5), 1995, pp. 837-840
CRYSTALLOGRAPHIC PROPERTIES OF BULK GAN CRYSTALS GROWN AT HIGH-PRESSURE
Authors: LESZCZYNSKI M GRZEGORY I BOCKOWSKI M JUN J POROWSKI S JASINSKI J BARANOWSKI JM
Citation: M. Leszczynski et al., CRYSTALLOGRAPHIC PROPERTIES OF BULK GAN CRYSTALS GROWN AT HIGH-PRESSURE, Acta Physica Polonica. A, 88(4), 1995, pp. 799-802
EPITAXIAL LAYERS VERSUS BULK SINGLE-CRYSTALS OF GAN - TEMPERATURE STUDIES OF LATTICE-PARAMETERS AND ENERGY-GAP
Authors: TEISSEYRE H PERLIN P LESZCZYNSKI M SUSKI T DMOWSKI L GRZEGORY I POROWSKI S JUN J MOUSTAKAS TD
Citation: H. Teisseyre et al., EPITAXIAL LAYERS VERSUS BULK SINGLE-CRYSTALS OF GAN - TEMPERATURE STUDIES OF LATTICE-PARAMETERS AND ENERGY-GAP, Acta Physica Polonica. A, 87(2), 1995, pp. 403-406
Risultati: 1-25 | 26-40