Citation: Wj. Hsue et al., FUNDAMENTAL GEOMETRY ANALYSIS OF WIRE ELECTRICAL-DISCHARGE MACHINING IN CORNER CUTTING, International journal of machine tools & manufacture, 39(4), 1999, pp. 651-667
Citation: Ss. Lu et al., EXERGETIC ANALYSIS OF COOLING SYSTEMS WITH OZONATION WATER-TREATMENT, Energy conversion and management, 39(14), 1998, pp. 1407-1422
Citation: Ky. Chen et Ss. Lu, A PETRI-NET AND ENTITY-RELATIONSHIP DIAGRAM BASED OBJECT-ORIENTED DESIGN METHOD FOR MANUFACTURING SYSTEMS CONTROL, International journal of computer integrated manufacturing, 10(1-4), 1997, pp. 17-28
Citation: Ys. Lin et al., GA0.51IN0.49P IN0.15GA0.85AS/GAAS PSEUDOMORPHIC DOPED-CHANNEL FET WITH HIGH-CURRENT DENSITY AND HIGH-BREAKDOWN VOLTAGE/, IEEE electron device letters, 18(4), 1997, pp. 150-153
Citation: Ss. Lu et al., DEVELOPMENT OF A NOVEL COORDINATE TRANSPOSING FIXTURE SYSTEM, International journal, advanced manufacturing technology, 13(5), 1997, pp. 350-358
Authors:
LU SS
LAU CP
TUNG YF
HUANG SW
CHEN YH
SHIH HC
TSAI SC
LU CC
WANG SW
CHEN JJ
CHIEN EJ
CHIEN CH
WANG PS
Citation: Ss. Lu et al., LACTATE AND THE EFFECTS OF EXERCISE ON TESTOSTERONE SECRETION - EVIDENCE FOR THE INVOLVEMENT OF A CAMP-MEDIATED MECHANISM, Medicine and science in sports and exercise, 29(8), 1997, pp. 1048-1054
Citation: Jy. Yen et al., STABILITY OF PDF CONTROLLER WITH STICK-SLIP FRICTION DEVICE, Journal of dynamic systems, measurement, and control, 119(3), 1997, pp. 486-490
Citation: Ys. Lin et al., HIGH-PERFORMANCE GA0.51IN0.49P GAAS AIRBRIDGE GATE MISFETS GROWN BY GAS-SOURCE MBE/, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 921-929
Citation: Yj. Wang et Ss. Lu, ULTRA-HIGH-SPEED 1-MU-M V-GATE GAAS-MESFET WITH CUTOFF FREQUENCY UP TO 47 GHZ BY 2D SIMULATION, Electronics Letters, 33(6), 1997, pp. 538-539
Citation: Ys. Lin et Ss. Lu, HIGH-BREAKDOWN-VOLTAGE GA0.51IN0.49P CHANNEL MESFETS GROWN BY GSMBE, IEEE electron device letters, 17(9), 1996, pp. 452-454
Authors:
LU SS
LAU CP
TUNG YF
HUANG SW
CHEN YH
SHIH HC
TSAI SC
LU CC
WANG SW
CHEN JJ
CHIEN EJ
CHIEN CH
WANG PS
Citation: Ss. Lu et al., LACTATE STIMULATES PROGESTERONE SECRETION VIA AN INCREASE IN CAMP PRODUCTION IN EXERCISED FEMALE RATS, American journal of physiology: endocrinology and metabolism, 34(5), 1996, pp. 910-915
Citation: Ys. Lin et al., HIGH-LINEARITY HIGH-CURRENT-DRIVABILITY GA0.51IN0.49P GAAS MISFET USING GA0.51IN0.49P AIRBRIDGE GATE STRUCTURE GROWN BY GSMBE/, IEEE electron device letters, 16(11), 1995, pp. 518-520
Citation: Ty. Hwang et al., BANG-BANG BASED FUZZY CONTROLLER FOR TIME-OPTIMAL AND MINIMUM CHATTERING SERVO SYSTEMS, Electric machines and power systems, 23(1), 1995, pp. 25-35
Citation: Ss. Lu et al., HIGH-BREAKDOWN-VOLTAGE GA0.51IN0.49P GAAS I-HEMT AND I(2)HEMT WITH A GAINP PASSIVATION LAYER GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Solid-state electronics, 38(1), 1995, pp. 25-29
Citation: Ss. Lu et Yj. Wang, A GSMBE GROWN GAINP GAAS NARROW BASE DHBT EXHIBITING N-SHAPE NEGATIVEDIFFERENTIAL RESISTANCE WITH VARIABLE PEAK-TO-VALLEY CURRENT RATIO UPTO 1X10(7) AT ROOM-TEMPERATURE/, IEEE electron device letters, 15(2), 1994, pp. 60-62
Citation: Y. Ito et al., DIFFERENCE IN NESTING SITES OF ROPALIDIA-FASCIATA (HYMENOPTERA, VESPIDAE) IN OKINAWA AND WESTERN TAIWAN, Journal of ethology, 12(2), 1994, pp. 187-191
Citation: Ss. Lu et Cl. Huang, PIEZOELECTRIC FIELD-EFFECT TRANSISTOR (PEFET) USING IN0.2GA0.8AS AL0.35GA0.65AS/IN0.2GA0.8AS/GAAS STRAINED-LAYER STRUCTURE ON (111)B GAAS SUBSTRATE/, Electronics Letters, 30(10), 1994, pp. 823-825
Citation: Ss. Lu et al., CLOSTRIDIUM-DIFFICILE-ASSOCIATED DIARRHEA IN PATIENTS WITH HIV POSITIVITY AND AIDS - A PROSPECTIVE CONTROLLED-STUDY, The American journal of gastroenterology, 89(8), 1994, pp. 1226-1229
Citation: Ss. Lu et Cc. Huang, HIGH-CURRENT-GAIN GA-0.51IN-0.49P GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, IEEE electron device letters, 13(4), 1992, pp. 214-216